JP2005513850A - 圧電性発振回路、その製造方法およびフィルター構造 - Google Patents
圧電性発振回路、その製造方法およびフィルター構造 Download PDFInfo
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- 229910052721 tungsten Inorganic materials 0.000 claims description 3
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
(a)圧電性発振回路の少なくとも1つの第1層を生成する工程と、
(b)工程(a)で生成した層を加工すること(Bearbeiten)により、第1周波数修正を行う工程と、
(c)圧電性発振回路の少なくとも1つの第2層を生成する工程と、
(d)工程(c)で生成した層を加工することにより、第2周波数修正を行う工程とを含む方法を提供する。
図1〜図3は、所定の固有周波数を有する圧電性発振回路の本発明に基づく実施方法の実施例を示す図である。
102 基板の下部表面
104 基板の上部表面
106 遮音層
108 遮音部
108a〜108b 遮音部の層
110 絶縁層の上部表面
112 底電極
112a 第1底電極層
112b 第2底電極層
114 圧電性層
116 上部電極
116a 第1上部電極層
116b 第2上部電極層
118 エッチング工程
120 エッチング工程
Claims (16)
- 所定の固有周波数と複数の層(112a,112b,114,116a,116b)とを備える圧電性発振回路を、薄膜技術により製造する方法において、
(a)圧電性発振回路の少なくとも1つの第1層(116a)を生成する工程と、
(b)工程(a)で生成した層(116a)を加工することにより、第1周波数修正を行う工程と、
(c)圧電性発振回路の少なくとも1つの第2層(116b)を生成する工程と、
(d)工程(c)で生成した層(116b)を加工することにより、第2周波数修正を行う工程とを含む方法。 - 上記工程(b)の第1周波数修正で、周波数を大まかに設定し、上記工程(c)の第2周波数修正で、周波数を精細に設定する、請求項1に記載の方法。
- 上記工程(a)で生成する第1層(116a)を、この第1層(116a)の厚みの変化に応じて圧電性発振回路の大きな周波数変化を引き起こす物質から製造し、
上記工程(c)で生成する第2層(116b)を、この第2層(116b)の厚みの変化に応じて圧電性発振回路の小さな周波数変化を引き起こす物質から製造する、請求項1または2に記載の方法。 - 上記第1周波数修正と上記第2周波数修正とが、第1層(116a)と第2層(116b)との薄層化を含んでいる、請求項1〜3のいずれか1項に記載の方法。
- 上記薄層化が、第1層(116a)と第2層(116b)とのエッチングを含んでいる、請求項4に記載の方法。
- 上記工程(a)の後および工程(b)の後に、
工程(a)の後および工程(b)の後にそれぞれ得られる構造の固有周波数を特定する工程と、
特定した構造の固有周波数に応じて、および、圧電性発振回路の所望の固有周波数に応じて、第1周波数修正および第2周波数修正のために、第1層(116a)および第2層(116b)の必要な厚み変化を決定する工程とを含む、請求項1〜5のいずれか1項に記載の方法。 - (e)圧電性発振回路の少なくとも1つの第3層を生成する工程と、
(f)工程(e)で生成した第3層を加工することにより、第3周波数修正を実施する工程とを含む、請求項1〜6のいずれか1項に記載の方法。 - 上記工程(a)が、
(a.1.)基板(100)を用意する工程と、
(a.2.)基板(100)の少なくとも一部に底電極(112)を生成する工程と、
(a.3.)底電極(114)の少なくとも一部に、圧電性層(114)を生成する工程と、
(a.4.)圧電性層(114)の少なくとも一部に、上部電極(116)用の第1電極層(116a)を生成する工程とを含み、
上記工程(c)が、上部電極(116)用の第2電極層(116)を、第1電極層(116a)に生成する工程を含み、
上記工程(b)において、第1電極層(116a)を加工し、
上記工程(d)において、第2電極層(116b)を加工する、請求項1〜7のいずれか1項に記載の方法。 - 上記工程(a.1.)が、基板(100)へ音響振動が漏れ出ることを防止するために、基板(100)上または基板(100)内に遮音部(108)を生成する工程を含む、請求項8に記載の方法。
- 上記底電極(112)を、単層または複層の電極(112a,112b)とする、請求項8または9に記載の方法。
- 上記第1電極層(116a)を、音響的に緻密な物質から製造し、上記第2電極層(116b)を、音響的な緻密さが第1電極層(116a)の物質よりも低い物質から製造する、請求項8〜10のいずれかに記載の方法。
- 上記の上部電極(116)および/または底電極(112)が、アルミニウムおよび/またはタングステンから製造されている、請求項11に記載の方法。
- 複数の圧電性発振回路を1つのウエハー上に生成し、
上記工程(a)において、ウエハー上に、少なくとも1つの第1層(116a)を、複数の圧電性発振回路のためにパターン化して生成し、
上記工程(b)において、第1周波数修正をウエハー全体に施し、
上記工程(c)において、少なくとも1つの第2層(116b)を、全ての圧電性発振回路のためにパターン化して生成し、
上記工程(d)において、第2周波数修正をウエハー全体に施す、請求項1〜12のいずれか1項に記載の方法。 - 上記第1周波数修正および第2周波数修正が、ウエハーの様々な領域を段階的に加工する工程を含んでいる、請求項13に記載の方法。
- 請求項1〜14のいずれか1項に記載の方法によって製造された圧電性発振回路。
- 請求項15に記載の圧電性発振回路を1つ以上備えるフィルター構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10162580A DE10162580A1 (de) | 2001-12-19 | 2001-12-19 | Piezoelektrischer Schwingkreis, Verfahren zu dessen Herstellung und Filteranordnung |
PCT/EP2002/013137 WO2003052928A1 (de) | 2001-12-19 | 2002-11-22 | Piezoelektrischer schwingkreis, verfahren zu dessen herstellung und filteranordnung |
Publications (2)
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JP2005513850A true JP2005513850A (ja) | 2005-05-12 |
JP3957215B2 JP3957215B2 (ja) | 2007-08-15 |
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JP2003553709A Expired - Fee Related JP3957215B2 (ja) | 2001-12-19 | 2002-11-22 | 圧電性発振回路、その製造方法およびフィルター構造 |
Country Status (5)
Country | Link |
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US (2) | US7455786B2 (ja) |
EP (1) | EP1456947B1 (ja) |
JP (1) | JP3957215B2 (ja) |
DE (2) | DE10162580A1 (ja) |
WO (1) | WO2003052928A1 (ja) |
Cited By (2)
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JP2008182512A (ja) * | 2007-01-25 | 2008-08-07 | Seiko Epson Corp | バルク音響振動子の製造方法及びバルク音響振動子 |
US7535324B2 (en) | 2007-06-15 | 2009-05-19 | Avago Technologies Wireless Ip, Pte. Ltd. | Piezoelectric resonator structure and method for manufacturing a coupled resonator device |
Families Citing this family (3)
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WO2006018788A1 (en) * | 2004-08-20 | 2006-02-23 | Philips Intellectual Property & Standards Gmbh | Narrow band bulk acoustic wave filter |
US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
US8479363B2 (en) * | 2010-05-11 | 2013-07-09 | Hao Zhang | Methods for wafer level trimming of acoustically coupled resonator filter |
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2001
- 2001-12-19 DE DE10162580A patent/DE10162580A1/de not_active Withdrawn
-
2002
- 2002-11-22 EP EP02777358A patent/EP1456947B1/de not_active Expired - Fee Related
- 2002-11-22 WO PCT/EP2002/013137 patent/WO2003052928A1/de active IP Right Grant
- 2002-11-22 DE DE50202672T patent/DE50202672D1/de not_active Expired - Lifetime
- 2002-11-22 JP JP2003553709A patent/JP3957215B2/ja not_active Expired - Fee Related
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2004
- 2004-06-16 US US10/869,817 patent/US7455786B2/en not_active Expired - Lifetime
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2008
- 2008-11-14 US US12/271,530 patent/US8365372B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008182512A (ja) * | 2007-01-25 | 2008-08-07 | Seiko Epson Corp | バルク音響振動子の製造方法及びバルク音響振動子 |
US7535324B2 (en) | 2007-06-15 | 2009-05-19 | Avago Technologies Wireless Ip, Pte. Ltd. | Piezoelectric resonator structure and method for manufacturing a coupled resonator device |
Also Published As
Publication number | Publication date |
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US7455786B2 (en) | 2008-11-25 |
EP1456947B1 (de) | 2005-03-30 |
DE10162580A1 (de) | 2003-07-17 |
JP3957215B2 (ja) | 2007-08-15 |
US20050062363A1 (en) | 2005-03-24 |
US8365372B2 (en) | 2013-02-05 |
EP1456947A1 (de) | 2004-09-15 |
US20090064477A1 (en) | 2009-03-12 |
WO2003052928A1 (de) | 2003-06-26 |
DE50202672D1 (de) | 2005-05-04 |
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