JP3947771B2 - 磁気記録媒体 - Google Patents
磁気記録媒体 Download PDFInfo
- Publication number
- JP3947771B2 JP3947771B2 JP2004292954A JP2004292954A JP3947771B2 JP 3947771 B2 JP3947771 B2 JP 3947771B2 JP 2004292954 A JP2004292954 A JP 2004292954A JP 2004292954 A JP2004292954 A JP 2004292954A JP 3947771 B2 JP3947771 B2 JP 3947771B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- recording layer
- recording medium
- coercive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 33
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 29
- 239000013078 crystal Substances 0.000 description 13
- 229910052697 platinum Inorganic materials 0.000 description 11
- 239000006249 magnetic particle Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910018979 CoPt Inorganic materials 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910020707 Co—Pt Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Description
[(Co1-mPtm)1-nCrn]100-x-yTixOy
(ここで、m、nは原子比で、mは0.2以上0.4以下、nは0以上0.1以下、xは9at.%以上13at.%以下、y/xは1.8以上2.3以下である)
で表される強磁性体からなる記録層を有することを特徴とする。
CoPt合金について、CoとPtの適切な比率を知るため、Ptの比率を0at.%から53.5at.%の範囲で変化させた厚さ約30nmのCoPt合金膜を作製し、その垂直抗磁力を調べた。結果を図2に示す。Ptの比率が0.2以上0.4以下の範囲で2.5Oe以上の高い抗磁力が得られるが、Ptの比率がこの範囲より小さい場合または大きい場合のいずれでも垂直抗磁力は劣化することがわかる。
本実施例では図3に示す磁気記録媒体を作製した。基板11として2.5インチのガラスディスクを用い、Arガス圧力1Paで厚さ約2nmのカーボン膜12、Arガス圧力0.07Paで厚さ約5nmのPt膜13、Arガス圧力3Paで厚さ約15nmのRu膜14を順次成膜して下地層とした。続いて、Co80Pt20(at.%)のターゲット表面にTiO2のチップを配置し、DCマグネトロンスパッタ法により、Arガス圧力1〜10Paで厚さ約15nmの記録層15を形成した。全ての層の成膜において、基板の加熱は行っていない。
ガラスディスク基板上に、実施例1と同様にしてカーボン、Pt、Ruの各下地層を成膜した後、Co80Pt20(at.%)のターゲット表面にTiO2およびCrのチップを配置し、RFマグネトロンスパッタ法により、Arガス圧力5Paで厚さ約15nmの記録層を形成した。この膜中の元素組成はCo48.2at.%、Pt13.1at.%、Cr6.0at.%、Ti9.8at.%、O22.9at.%であり、TiとOを除く元素中でのCrの比率は8.9at.%であった。また、この膜のHcは3312Oeであった。
ガラスディスク基板上に、実施例1と同様にしてカーボン、Pt、Ruの各下地層を成膜した後、Co80Pt20(at.%)の体積比が70%、SiO2の体積比が30%のターゲットを用いて、Arガス圧力3〜10Paで厚さ約15nmの記録層を形成した。垂直抗磁力は成膜Arガス圧力により変化し、7Paにおいて最大値(参考文献1の開示に近い値)が得られた。この最大のHcを示した試料は、M−Hループの傾きパラメータαが2.0であり、実施例1よりも大きい値であった。
ガラスディスク基板上に、実施例1と同様にしてカーボン、Pt、Ruの各下地層を成膜した後、Co80Pt20(at.%)のターゲット表面にCr2O3のチップを配置し、DCマグネトロンスパッタ法により、Arガス圧力3〜10Paで厚さ約15nmの記録層を形成した。垂直抗磁力は成膜Arガス圧力により変化し、5PaにおいてHcが最大となった。この最大のHcを示した試料は、M−Hループの傾きパラメータαが1.9であり、実施例1よりも大きい値であった。
図7に、実施例1、比較例1および比較例2の評価結果をまとめて示す。
Claims (2)
- 下記一般式
[(Co1-mPtm)1-nCrn]100-x-yTixOy
(ここで、m、nは原子比で、mは0.2以上0.4以下、nは0以上0.1以下、xは9at.%以上13at.%以下、y/xは1.8以上2.3以下である)
で表される強磁性体からなる記録層を有することを特徴とする磁気記録媒体。 - 前記記録層は垂直磁気異方性を持つことを特徴とする請求項1に記載の磁気記録媒体。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004292954A JP3947771B2 (ja) | 2004-10-05 | 2004-10-05 | 磁気記録媒体 |
US11/576,348 US20070243420A1 (en) | 2004-10-05 | 2005-10-04 | Magnetic Recording Medium |
PCT/JP2005/018373 WO2006038630A1 (ja) | 2004-10-05 | 2005-10-04 | 磁気記録媒体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004292954A JP3947771B2 (ja) | 2004-10-05 | 2004-10-05 | 磁気記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006107626A JP2006107626A (ja) | 2006-04-20 |
JP3947771B2 true JP3947771B2 (ja) | 2007-07-25 |
Family
ID=36142703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004292954A Expired - Fee Related JP3947771B2 (ja) | 2004-10-05 | 2004-10-05 | 磁気記録媒体 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070243420A1 (ja) |
JP (1) | JP3947771B2 (ja) |
WO (1) | WO2006038630A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008090917A (ja) * | 2006-09-30 | 2008-04-17 | Hoya Corp | 磁気記録媒体製造用スパッタリングターゲット、及び垂直磁気記録媒体の製造方法並びに垂直磁気記録媒体 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001043526A (ja) * | 1999-05-26 | 2001-02-16 | Fuji Electric Co Ltd | 磁気記録媒体及びその製造方法 |
JP2002083411A (ja) * | 2000-06-30 | 2002-03-22 | Sony Corp | 磁気記録媒体及びその製造方法 |
JP2002197633A (ja) * | 2000-12-22 | 2002-07-12 | Sony Corp | 磁気記録媒体 |
JP2002260215A (ja) * | 2001-02-28 | 2002-09-13 | Fuji Electric Co Ltd | 記録媒体用基板および記録媒体 |
US7105240B2 (en) * | 2003-06-03 | 2006-09-12 | Seagate Technology Llc | Perpendicular media with improved corrosion performance |
US7192664B1 (en) * | 2003-06-24 | 2007-03-20 | Seagate Technology Llc | Magnetic alloy containing TiO2 for perpendicular magnetic recording application |
JP4255826B2 (ja) * | 2003-12-26 | 2009-04-15 | 株式会社東芝 | 磁気記録媒体及び磁気記録媒体の製造方法並びに磁気記録再生装置 |
-
2004
- 2004-10-05 JP JP2004292954A patent/JP3947771B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-04 US US11/576,348 patent/US20070243420A1/en not_active Abandoned
- 2005-10-04 WO PCT/JP2005/018373 patent/WO2006038630A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20070243420A1 (en) | 2007-10-18 |
WO2006038630A1 (ja) | 2006-04-13 |
JP2006107626A (ja) | 2006-04-20 |
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