JP3947126B2 - 半導体製造装置 - Google Patents

半導体製造装置 Download PDF

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Publication number
JP3947126B2
JP3947126B2 JP2003107067A JP2003107067A JP3947126B2 JP 3947126 B2 JP3947126 B2 JP 3947126B2 JP 2003107067 A JP2003107067 A JP 2003107067A JP 2003107067 A JP2003107067 A JP 2003107067A JP 3947126 B2 JP3947126 B2 JP 3947126B2
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Japan
Prior art keywords
gas
reaction chamber
type
semiconductor manufacturing
manufacturing apparatus
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JP2003107067A
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Japanese (ja)
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JP2004006801A (ja
JP2004006801A5 (enExample
Inventor
和幸 奥田
泰志 八木
徹 加賀谷
正憲 境
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2003107067A priority Critical patent/JP3947126B2/ja
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Publication of JP2004006801A5 publication Critical patent/JP2004006801A5/ja
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JP2003107067A 2002-04-11 2003-04-10 半導体製造装置 Expired - Lifetime JP3947126B2 (ja)

Priority Applications (1)

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JP2003107067A JP3947126B2 (ja) 2002-04-11 2003-04-10 半導体製造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002109130 2002-04-11
JP2003107067A JP3947126B2 (ja) 2002-04-11 2003-04-10 半導体製造装置

Related Child Applications (1)

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JP2004127699A Division JP4695343B2 (ja) 2002-04-11 2004-04-23 縦型半導体製造装置

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JP2004006801A JP2004006801A (ja) 2004-01-08
JP2004006801A5 JP2004006801A5 (enExample) 2005-03-03
JP3947126B2 true JP3947126B2 (ja) 2007-07-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093158B2 (en) 2009-09-11 2012-01-10 Hitachi Kokusai Electric, Inc. Semiconductor device manufacturing method and substrate processing apparatus
KR101396255B1 (ko) 2012-03-21 2014-05-16 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체

Families Citing this family (31)

* Cited by examiner, † Cited by third party
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JP4074213B2 (ja) * 2003-04-07 2008-04-09 東京エレクトロン株式会社 基板の処理方法及び基板の処理装置
CN101381861B (zh) * 2004-06-28 2011-04-13 东京毅力科创株式会社 成膜方法
JP4396547B2 (ja) 2004-06-28 2010-01-13 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006066884A (ja) 2004-07-27 2006-03-09 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
JP4179311B2 (ja) * 2004-07-28 2008-11-12 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006135229A (ja) * 2004-11-09 2006-05-25 Elpida Memory Inc 絶縁膜の成膜方法及びその絶縁膜を備えた半導体装置
JP4258518B2 (ja) * 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
KR100980126B1 (ko) 2005-08-02 2010-09-03 도쿄엘렉트론가부시키가이샤 성막 방법, 성막 장치 및 기억매체
JP4305427B2 (ja) * 2005-08-02 2009-07-29 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
KR100851439B1 (ko) * 2007-02-01 2008-08-11 주식회사 테라세미콘 소스가스 공급장치
JP5281759B2 (ja) * 2007-05-29 2013-09-04 株式会社日立国際電気 基板処理装置、コントローラおよび半導体装置の製造方法
JP5233562B2 (ja) 2008-10-04 2013-07-10 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5223804B2 (ja) 2009-07-22 2013-06-26 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5357083B2 (ja) * 2010-02-24 2013-12-04 三井造船株式会社 薄膜形成装置および薄膜形成方法
JP5742185B2 (ja) 2010-03-19 2015-07-01 東京エレクトロン株式会社 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体
JP5541223B2 (ja) * 2010-07-29 2014-07-09 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2012126976A (ja) * 2010-12-16 2012-07-05 Ulvac Japan Ltd 真空成膜装置及び成膜方法
JP5886531B2 (ja) 2011-02-24 2016-03-16 東京エレクトロン株式会社 成膜方法および成膜装置
JP5750281B2 (ja) * 2011-03-07 2015-07-15 株式会社アルバック 真空一貫基板処理装置及び成膜方法
JP5959307B2 (ja) * 2011-06-22 2016-08-02 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6043546B2 (ja) * 2011-10-21 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5920242B2 (ja) 2012-06-02 2016-05-18 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2014199856A (ja) 2013-03-29 2014-10-23 東京エレクトロン株式会社 縦型熱処理装置の運転方法及び記憶媒体並びに縦型熱処理装置
JP2015073020A (ja) * 2013-10-03 2015-04-16 三井造船株式会社 原子層堆積装置および原子層堆積方法
JP5859586B2 (ja) * 2013-12-27 2016-02-10 株式会社日立国際電気 基板処理システム、半導体装置の製造方法および記録媒体
JP6820793B2 (ja) * 2017-04-27 2021-01-27 東京エレクトロン株式会社 基板処理装置、排気管のコーティング方法及び基板処理方法
JP6830878B2 (ja) 2017-09-28 2021-02-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラム
JP7488524B2 (ja) * 2019-11-29 2024-05-22 株式会社フジキン 流量測定器
JP7160421B1 (ja) 2022-02-10 2022-10-25 株式会社シー・ヴィ・リサーチ 成膜装置、成膜方法及びガスノズル
CN114823428A (zh) * 2022-05-30 2022-07-29 北京北方华创微电子装备有限公司 半导体热处理设备及其控制方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093158B2 (en) 2009-09-11 2012-01-10 Hitachi Kokusai Electric, Inc. Semiconductor device manufacturing method and substrate processing apparatus
US8590484B2 (en) 2009-09-11 2013-11-26 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
KR101396255B1 (ko) 2012-03-21 2014-05-16 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체

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