JP3942699B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP3942699B2 JP3942699B2 JP24981797A JP24981797A JP3942699B2 JP 3942699 B2 JP3942699 B2 JP 3942699B2 JP 24981797 A JP24981797 A JP 24981797A JP 24981797 A JP24981797 A JP 24981797A JP 3942699 B2 JP3942699 B2 JP 3942699B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- crystalline silicon
- gate electrode
- island
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000010408 film Substances 0.000 claims description 203
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 73
- 239000012535 impurity Substances 0.000 claims description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 43
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 41
- 229910052796 boron Inorganic materials 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 229910052698 phosphorus Inorganic materials 0.000 claims description 22
- 239000011574 phosphorus Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000005247 gettering Methods 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 15
- 229910052795 boron group element Inorganic materials 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 7
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims 5
- 229910052696 pnictogen Inorganic materials 0.000 claims 3
- 229910021426 porous silicon Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 239000010409 thin film Substances 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000012298 atmosphere Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24981797A JP3942699B2 (ja) | 1997-08-29 | 1997-08-29 | 半導体装置の作製方法 |
| US09/141,778 US6197624B1 (en) | 1997-08-29 | 1998-08-27 | Method of adjusting the threshold voltage in an SOI CMOS |
| US09/342,887 US6160268A (en) | 1997-08-29 | 1999-06-29 | Semiconductor device and manufacturing method thereof |
| US09/753,410 US6570552B2 (en) | 1997-08-29 | 2001-01-02 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24981797A JP3942699B2 (ja) | 1997-08-29 | 1997-08-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1174535A JPH1174535A (ja) | 1999-03-16 |
| JPH1174535A5 JPH1174535A5 (enrdf_load_stackoverflow) | 2005-06-02 |
| JP3942699B2 true JP3942699B2 (ja) | 2007-07-11 |
Family
ID=17198642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24981797A Expired - Fee Related JP3942699B2 (ja) | 1997-08-29 | 1997-08-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3942699B2 (enrdf_load_stackoverflow) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6346730B1 (en) * | 1999-04-06 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
| JP4651773B2 (ja) * | 1999-04-06 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001007342A (ja) * | 1999-04-20 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2002141514A (ja) | 2000-11-07 | 2002-05-17 | Sanyo Electric Co Ltd | ボトムゲート型薄膜トランジスタ及びその製造方法 |
| JP5088993B2 (ja) * | 2001-02-16 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100752370B1 (ko) | 2004-11-17 | 2007-08-27 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
| JP5371144B2 (ja) * | 2007-06-29 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法、並びに電子機器 |
| US8786793B2 (en) * | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| KR101484297B1 (ko) * | 2007-08-31 | 2015-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 표시장치의 제작방법 |
| EP2073255B1 (en) * | 2007-12-21 | 2016-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Diode and display device comprising the diode |
| KR100982311B1 (ko) | 2008-05-26 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
| KR20180094132A (ko) * | 2009-09-24 | 2018-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기 |
| KR101929190B1 (ko) | 2010-03-05 | 2018-12-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2013065267A1 (ja) * | 2011-11-01 | 2013-05-10 | シャープ株式会社 | 薄膜トランジスタ基板、液晶表示装置及び薄膜トランジスタ基板の製造方法 |
-
1997
- 1997-08-29 JP JP24981797A patent/JP3942699B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1174535A (ja) | 1999-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6160268A (en) | Semiconductor device and manufacturing method thereof | |
| JP3942683B2 (ja) | 半導体装置作製方法 | |
| JP3973723B2 (ja) | 半導体装置の作製方法 | |
| JP4386978B2 (ja) | 半導体装置の作製方法 | |
| US7612375B2 (en) | Semiconductor device and method for fabricating the same | |
| JP3974229B2 (ja) | 半導体装置の作製方法 | |
| KR100543102B1 (ko) | 반도체장치및그제조방법 | |
| US7410847B2 (en) | Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same | |
| US6303415B1 (en) | Semiconductor device and method of fabricating same | |
| US20050092998A1 (en) | Semiconductor device, and method of forming the same | |
| JP3942699B2 (ja) | 半導体装置の作製方法 | |
| US6727124B2 (en) | Method of manufacturing a TFT using a catalytic element to promote crystallization of a semiconductor film and gettering the catalytic element | |
| US20010025992A1 (en) | Liquid crystal display device and manufacturing method thereof | |
| US20070010075A1 (en) | Semiconductor device and method for manufacturing same | |
| JPH10275913A (ja) | 半導体装置、半導体装置の製造方法及び薄膜トランジスタの製造方法 | |
| JPH1197702A (ja) | 半導体装置およびその作製方法 | |
| JP4059095B2 (ja) | 相補型薄膜トランジスタ回路、電気光学装置、電子機器 | |
| JP3942701B2 (ja) | 表示装置の作製方法 | |
| JP4450900B2 (ja) | 半導体装置の作製方法 | |
| JP4080168B2 (ja) | 半導体装置の作製方法 | |
| JP4514862B2 (ja) | 半導体装置の作製方法 | |
| JP4127467B2 (ja) | 半導体装置の作製方法 | |
| JPH1187733A (ja) | 半導体装置の作製方法 | |
| JP2000243974A (ja) | 半導体装置およびその作製方法 | |
| JP3874825B2 (ja) | 半導体装置及び電気光学装置の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040811 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040811 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060731 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060808 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061006 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070403 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070404 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100413 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100413 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110413 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110413 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120413 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130413 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130413 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140413 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |