JPH1174535A5 - - Google Patents

Info

Publication number
JPH1174535A5
JPH1174535A5 JP1997249817A JP24981797A JPH1174535A5 JP H1174535 A5 JPH1174535 A5 JP H1174535A5 JP 1997249817 A JP1997249817 A JP 1997249817A JP 24981797 A JP24981797 A JP 24981797A JP H1174535 A5 JPH1174535 A5 JP H1174535A5
Authority
JP
Japan
Prior art keywords
semiconductor film
gate electrode
crystalline semiconductor
island
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997249817A
Other languages
English (en)
Japanese (ja)
Other versions
JP3942699B2 (ja
JPH1174535A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP24981797A priority Critical patent/JP3942699B2/ja
Priority claimed from JP24981797A external-priority patent/JP3942699B2/ja
Priority to US09/141,778 priority patent/US6197624B1/en
Publication of JPH1174535A publication Critical patent/JPH1174535A/ja
Priority to US09/342,887 priority patent/US6160268A/en
Priority to US09/753,410 priority patent/US6570552B2/en
Publication of JPH1174535A5 publication Critical patent/JPH1174535A5/ja
Application granted granted Critical
Publication of JP3942699B2 publication Critical patent/JP3942699B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP24981797A 1997-08-29 1997-08-29 半導体装置の作製方法 Expired - Fee Related JP3942699B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP24981797A JP3942699B2 (ja) 1997-08-29 1997-08-29 半導体装置の作製方法
US09/141,778 US6197624B1 (en) 1997-08-29 1998-08-27 Method of adjusting the threshold voltage in an SOI CMOS
US09/342,887 US6160268A (en) 1997-08-29 1999-06-29 Semiconductor device and manufacturing method thereof
US09/753,410 US6570552B2 (en) 1997-08-29 2001-01-02 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24981797A JP3942699B2 (ja) 1997-08-29 1997-08-29 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1174535A JPH1174535A (ja) 1999-03-16
JPH1174535A5 true JPH1174535A5 (enrdf_load_stackoverflow) 2005-06-02
JP3942699B2 JP3942699B2 (ja) 2007-07-11

Family

ID=17198642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24981797A Expired - Fee Related JP3942699B2 (ja) 1997-08-29 1997-08-29 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP3942699B2 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
JP4651773B2 (ja) * 1999-04-06 2011-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002141514A (ja) 2000-11-07 2002-05-17 Sanyo Electric Co Ltd ボトムゲート型薄膜トランジスタ及びその製造方法
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100752370B1 (ko) 2004-11-17 2007-08-27 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
JP5371144B2 (ja) * 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
US8786793B2 (en) * 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
KR100982311B1 (ko) 2008-05-26 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR20180094132A (ko) * 2009-09-24 2018-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기
KR101929190B1 (ko) 2010-03-05 2018-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2013065267A1 (ja) * 2011-11-01 2013-05-10 シャープ株式会社 薄膜トランジスタ基板、液晶表示装置及び薄膜トランジスタ基板の製造方法

Similar Documents

Publication Publication Date Title
JP3460170B2 (ja) 薄膜トランジスタ及びその製造方法
US5705413A (en) Method of manufacturing an electronic device using thermally stable mask
JP3717634B2 (ja) 半導体装置の作製方法
JP3974229B2 (ja) 半導体装置の作製方法
JPH1174535A5 (enrdf_load_stackoverflow)
JP2001028448A (ja) 薄膜トランジスタの作製方法
JP2751237B2 (ja) 集積回路装置及び集積回路装置の製造方法
JPH0832081A (ja) 薄膜半導体装置
JPH1197706A5 (enrdf_load_stackoverflow)
JP3514891B2 (ja) 半導体装置およびその作製方法
JPH11103068A5 (enrdf_load_stackoverflow)
JPH10242475A5 (enrdf_load_stackoverflow)
JPH11103067A5 (ja) 半導体装置の作製方法
JPH06104432A (ja) 薄膜状半導体装置およびその作製方法
JP2776820B2 (ja) 半導体装置の製造方法
JPH0832072A (ja) 半導体装置
JP3153911B2 (ja) 半導体装置の製法
US6437403B1 (en) Semiconductor device
JPH1187731A5 (ja) 表示装置およびその作製方法
JPH10301146A5 (enrdf_load_stackoverflow)
KR20050031249A (ko) 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
JPH0432267A (ja) 薄膜トランジスタ
JP3465772B2 (ja) 半導体装置の製造方法
JP2874062B2 (ja) 薄膜トランジスタの製造方法
JP3386713B2 (ja) アクテイブマトリクス型表示装置の作製方法