JP3935303B2 - 加熱処理装置 - Google Patents

加熱処理装置 Download PDF

Info

Publication number
JP3935303B2
JP3935303B2 JP2000075125A JP2000075125A JP3935303B2 JP 3935303 B2 JP3935303 B2 JP 3935303B2 JP 2000075125 A JP2000075125 A JP 2000075125A JP 2000075125 A JP2000075125 A JP 2000075125A JP 3935303 B2 JP3935303 B2 JP 3935303B2
Authority
JP
Japan
Prior art keywords
substrate
heating plate
pin
cylindrical member
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000075125A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001267217A (ja
Inventor
清久 立山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000075125A priority Critical patent/JP3935303B2/ja
Priority to KR1020010013342A priority patent/KR100693563B1/ko
Priority to TW090106241A priority patent/TW498405B/zh
Publication of JP2001267217A publication Critical patent/JP2001267217A/ja
Application granted granted Critical
Publication of JP3935303B2 publication Critical patent/JP3935303B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2000075125A 2000-03-17 2000-03-17 加熱処理装置 Expired - Fee Related JP3935303B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000075125A JP3935303B2 (ja) 2000-03-17 2000-03-17 加熱処理装置
KR1020010013342A KR100693563B1 (ko) 2000-03-17 2001-03-15 가열처리장치
TW090106241A TW498405B (en) 2000-03-17 2001-03-16 Heating treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000075125A JP3935303B2 (ja) 2000-03-17 2000-03-17 加熱処理装置

Publications (2)

Publication Number Publication Date
JP2001267217A JP2001267217A (ja) 2001-09-28
JP3935303B2 true JP3935303B2 (ja) 2007-06-20

Family

ID=18593064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000075125A Expired - Fee Related JP3935303B2 (ja) 2000-03-17 2000-03-17 加熱処理装置

Country Status (3)

Country Link
JP (1) JP3935303B2 (ko)
KR (1) KR100693563B1 (ko)
TW (1) TW498405B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009260377A (ja) * 2001-12-25 2009-11-05 Tokyo Electron Ltd 成膜方法及び処理装置
JP2003218003A (ja) * 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
KR20030068773A (ko) * 2002-02-18 2003-08-25 태화일렉트론(주) 엘씨디 글라스 건조용 가열장치의 구조
JP2003282403A (ja) * 2002-03-22 2003-10-03 Sumitomo Electric Ind Ltd 半導体製造装置用保持体
JP4601301B2 (ja) * 2003-01-30 2010-12-22 日本写真印刷株式会社 加熱装置
JP4312787B2 (ja) * 2006-11-15 2009-08-12 東京エレクトロン株式会社 減圧乾燥装置
JP5465846B2 (ja) 2008-07-04 2014-04-09 武蔵エンジニアリング株式会社 基板加熱装置、それを備える液体材料塗布装置および基板加熱方法
KR100990746B1 (ko) * 2009-11-19 2010-11-02 (주)앤피에스 기판 처리 장치
WO2018106952A1 (en) * 2016-12-07 2018-06-14 Tel Fsi, Inc. Wafer edge lift pin design for manufacturing a semiconductor device
KR102222455B1 (ko) * 2018-01-15 2021-03-04 세메스 주식회사 기판 처리 장치
JP2021097162A (ja) * 2019-12-18 2021-06-24 東京エレクトロン株式会社 基板処理装置及び載置台
JP7333675B2 (ja) 2021-02-01 2023-08-25 株式会社 天谷製作所 リフトピン、半導体製造装置およびリフトピン製造方法

Also Published As

Publication number Publication date
KR100693563B1 (ko) 2007-03-14
JP2001267217A (ja) 2001-09-28
KR20010092357A (ko) 2001-10-24
TW498405B (en) 2002-08-11

Similar Documents

Publication Publication Date Title
JP3333135B2 (ja) 熱処理装置及び熱処理方法
JP3935303B2 (ja) 加熱処理装置
JPH10308348A (ja) 基板処理装置
JP6487244B2 (ja) 熱処理装置および熱処理方法
KR20070061418A (ko) 가열 처리 장치
JP4334486B2 (ja) 加熱処理装置
JP3649048B2 (ja) レジスト塗布・現像装置、ならびにそれに用いる基板加熱処理装置および基板搬送装置
JP3874960B2 (ja) 基板処理装置
JP2014022497A (ja) 熱処理装置、熱処理方法、プログラム及びコンピュータ記憶媒体
JP3451166B2 (ja) 基板熱処理装置
KR101821594B1 (ko) 기판 가열 장치, 이를 구비하는 도포 현상 장치 및 기판 가열 방법
JP2000091218A (ja) 加熱処理方法及び加熱処理装置
JP3324974B2 (ja) 熱処理装置及び熱処理方法
JP3942533B2 (ja) 基板処理装置
JP4781165B2 (ja) 熱処理装置
JP3822752B2 (ja) 処理装置
JP4049504B2 (ja) 加熱処理装置
JP4334487B2 (ja) 基板熱処理装置及び基板熱処理装方法
JP3833827B2 (ja) 熱処理装置
JP3768692B2 (ja) 加熱処理装置および加熱処理方法
JP2004146625A (ja) ベーキング方法及びベーキング装置
JP2001307978A (ja) 基板載置台
JP2007258303A (ja) 基板熱処理装置
JP2023032391A (ja) 基板処理装置および基板処理方法
JP2006222176A5 (ko)

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041221

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050221

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070313

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070319

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160330

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees