JP3934289B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3934289B2
JP3934289B2 JP27701699A JP27701699A JP3934289B2 JP 3934289 B2 JP3934289 B2 JP 3934289B2 JP 27701699 A JP27701699 A JP 27701699A JP 27701699 A JP27701699 A JP 27701699A JP 3934289 B2 JP3934289 B2 JP 3934289B2
Authority
JP
Japan
Prior art keywords
group
acid
decomposable
photoresist composition
positive photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27701699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001100420A (ja
JP2001100420A5 (enExample
Inventor
一良 水谷
昭一郎 安波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP27701699A priority Critical patent/JP3934289B2/ja
Priority to KR1020000054065A priority patent/KR100707767B1/ko
Priority to US09/671,177 priority patent/US6387590B1/en
Priority to TW089120118A priority patent/TWI225970B/zh
Publication of JP2001100420A publication Critical patent/JP2001100420A/ja
Priority to US10/020,958 priority patent/US6479213B2/en
Publication of JP2001100420A5 publication Critical patent/JP2001100420A5/ja
Application granted granted Critical
Publication of JP3934289B2 publication Critical patent/JP3934289B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP27701699A 1999-09-28 1999-09-29 ポジ型フォトレジスト組成物 Expired - Fee Related JP3934289B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP27701699A JP3934289B2 (ja) 1999-09-29 1999-09-29 ポジ型フォトレジスト組成物
KR1020000054065A KR100707767B1 (ko) 1999-09-28 2000-09-14 포지티브 포토레지스트 조성물
US09/671,177 US6387590B1 (en) 1999-09-28 2000-09-28 Positive photoresist composition
TW089120118A TWI225970B (en) 1999-09-28 2000-09-28 Positive-type photoresist composition
US10/020,958 US6479213B2 (en) 1999-09-28 2001-12-19 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27701699A JP3934289B2 (ja) 1999-09-29 1999-09-29 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2001100420A JP2001100420A (ja) 2001-04-13
JP2001100420A5 JP2001100420A5 (enExample) 2005-07-07
JP3934289B2 true JP3934289B2 (ja) 2007-06-20

Family

ID=17577606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27701699A Expired - Fee Related JP3934289B2 (ja) 1999-09-28 1999-09-29 ポジ型フォトレジスト組成物

Country Status (1)

Country Link
JP (1) JP3934289B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4141625B2 (ja) * 2000-08-09 2008-08-27 東京応化工業株式会社 ポジ型レジスト組成物およびそのレジスト層を設けた基材
JP4295937B2 (ja) * 2000-12-05 2009-07-15 株式会社Ｋｒｉ 活性成分及びそれを用いた感光性樹脂組成物
JP2009286980A (ja) * 2008-06-02 2009-12-10 Nissan Chem Ind Ltd アルカリ可溶性樹脂及び感光性樹脂組成物

Also Published As

Publication number Publication date
JP2001100420A (ja) 2001-04-13

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