JP3933592B2 - 窒化物系半導体素子 - Google Patents

窒化物系半導体素子 Download PDF

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Publication number
JP3933592B2
JP3933592B2 JP2003074966A JP2003074966A JP3933592B2 JP 3933592 B2 JP3933592 B2 JP 3933592B2 JP 2003074966 A JP2003074966 A JP 2003074966A JP 2003074966 A JP2003074966 A JP 2003074966A JP 3933592 B2 JP3933592 B2 JP 3933592B2
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Japan
Prior art keywords
nitride
type gan
gan substrate
back surface
semiconductor layer
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JP2003074966A
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Japanese (ja)
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JP2004006718A5 (enExample
JP2004006718A (ja
Inventor
忠夫 戸田
雅幸 畑
勤 山口
康彦 野村
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2003074966A priority Critical patent/JP3933592B2/ja
Publication of JP2004006718A publication Critical patent/JP2004006718A/ja
Publication of JP2004006718A5 publication Critical patent/JP2004006718A5/ja
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JP2003074966A 2002-03-26 2003-03-19 窒化物系半導体素子 Expired - Lifetime JP3933592B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003074966A JP3933592B2 (ja) 2002-03-26 2003-03-19 窒化物系半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002085085 2002-03-26
JP2003074966A JP3933592B2 (ja) 2002-03-26 2003-03-19 窒化物系半導体素子

Related Child Applications (7)

Application Number Title Priority Date Filing Date
JP2006232784A Division JP3896149B2 (ja) 2002-03-26 2006-08-29 窒化物系半導体素子およびその製造方法
JP2006232783A Division JP3920910B2 (ja) 2002-03-26 2006-08-29 窒化物系半導体素子およびその製造方法
JP2006348156A Division JP2007116192A (ja) 2002-03-26 2006-12-25 窒化物系半導体装置
JP2006348155A Division JP4171511B2 (ja) 2002-03-26 2006-12-25 窒化物系半導体素子の製造方法
JP2006348140A Division JP4017654B2 (ja) 2002-03-26 2006-12-25 窒化物系半導体素子
JP2006348161A Division JP4148976B2 (ja) 2002-03-26 2006-12-25 窒化物系半導体素子の製造方法
JP2006348164A Division JP4078380B2 (ja) 2002-03-26 2006-12-25 窒化物系半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JP2004006718A JP2004006718A (ja) 2004-01-08
JP2004006718A5 JP2004006718A5 (enExample) 2006-10-12
JP3933592B2 true JP3933592B2 (ja) 2007-06-20

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Family Applications (1)

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JP2003074966A Expired - Lifetime JP3933592B2 (ja) 2002-03-26 2003-03-19 窒化物系半導体素子

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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
JP5217077B2 (ja) * 2004-02-20 2013-06-19 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体基板の製造方法、並びに窒化物半導体素子の製造方法
JP4670034B2 (ja) 2004-03-12 2011-04-13 学校法人早稲田大学 電極を備えたＧａ２Ｏ３系半導体層
JP4822674B2 (ja) * 2004-04-30 2011-11-24 パナソニック株式会社 窒化物半導体素子およびその製造方法
JP4379208B2 (ja) 2004-06-03 2009-12-09 三菱電機株式会社 窒化物半導体装置の製造方法
JP2006128558A (ja) * 2004-11-01 2006-05-18 Sony Corp 半導体レーザ、半導体レーザの実装方法、半導体レーザ実装構造体および光ディスク装置
JP2006179511A (ja) 2004-12-20 2006-07-06 Sumitomo Electric Ind Ltd 発光装置
US8685764B2 (en) * 2005-01-11 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Method to make low resistance contact
CN101124704A (zh) 2005-03-16 2008-02-13 松下电器产业株式会社 氮化物半导体装置及其制造方法
JP2006294698A (ja) * 2005-04-06 2006-10-26 Sumitomo Electric Ind Ltd 発光素子、発光素子の製造方法、およびＧａＮ基板
US7606276B2 (en) 2005-05-19 2009-10-20 Panasonic Corporation Nitride semiconductor device and method for fabricating the same
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
JP2007116076A (ja) * 2005-09-22 2007-05-10 Matsushita Electric Ind Co Ltd 半導体素子
JP2007273492A (ja) 2006-03-30 2007-10-18 Mitsubishi Electric Corp 窒化物半導体装置およびその製造方法
JP2007273844A (ja) * 2006-03-31 2007-10-18 Matsushita Electric Ind Co Ltd 半導体素子
JP2008028259A (ja) * 2006-07-24 2008-02-07 Mitsubishi Chemicals Corp 単結晶ＧａＮ基板の製造方法
JP4884866B2 (ja) 2006-07-25 2012-02-29 三菱電機株式会社 窒化物半導体装置の製造方法
JP2010147117A (ja) * 2008-12-17 2010-07-01 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
JP5281545B2 (ja) * 2009-11-04 2013-09-04 スタンレー電気株式会社 半導体発光素子の製造方法
RU2434315C1 (ru) * 2010-03-15 2011-11-20 Юрий Георгиевич Шретер Светоизлучающее устройство с гетерофазными границами
JP2012231087A (ja) * 2011-04-27 2012-11-22 Mitsubishi Chemicals Corp 窒化物系ｌｅｄの製造方法
KR101433548B1 (ko) 2011-09-12 2014-08-22 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
JP2013201326A (ja) * 2012-03-26 2013-10-03 Hitachi Cable Ltd 窒化ガリウム基板及びエピタキシャルウェハ
JP6957982B2 (ja) * 2017-05-29 2021-11-02 三菱電機株式会社 半導体装置及びその製造方法
JP6893268B1 (ja) * 2020-02-13 2021-06-23 株式会社サイオクス 構造体の製造方法
JP7165858B2 (ja) * 2020-06-30 2022-11-07 日亜化学工業株式会社 発光素子の製造方法
CN112420513B (zh) * 2020-12-07 2025-03-04 中国科学院苏州纳米技术与纳米仿生研究所 湿法腐蚀实现凹栅增强型hemt器件的方法
JP7563254B2 (ja) * 2021-03-11 2024-10-08 豊田合成株式会社 発光素子とその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275911A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd 半導体レーザ装置とその製造方法
JP3360812B2 (ja) * 1998-05-26 2003-01-07 日亜化学工業株式会社 窒化物半導体素子
JP4077137B2 (ja) * 2000-06-15 2008-04-16 東芝電子エンジニアリング株式会社 半導体発光素子及びその製造方法
JP2001068786A (ja) * 1999-06-24 2001-03-16 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2001176823A (ja) * 1999-12-17 2001-06-29 Sharp Corp 窒化物半導体チップの製造方法
JP2001345266A (ja) * 2000-02-24 2001-12-14 Matsushita Electric Ind Co Ltd 半導体装置，その製造方法及び半導体基板の製造方法
JP2002026456A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体装置、半導体レーザ及びその製造方法並びにエッチング方法
JP2002033305A (ja) * 2000-07-13 2002-01-31 Hitachi Ltd 半導体装置の製造方法およびそれを用いて製造した半導体装置
JP2001313441A (ja) * 2001-03-30 2001-11-09 Rohm Co Ltd 半導体発光素子
KR100387242B1 (ko) * 2001-05-26 2003-06-12 삼성전기주식회사 반도체 발광소자의 제조방법

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