JP3929657B2 - 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法 - Google Patents

結晶成長方法およびｉｉｉ族窒化物結晶の製造方法 Download PDF

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JP3929657B2
JP3929657B2 JP27704599A JP27704599A JP3929657B2 JP 3929657 B2 JP3929657 B2 JP 3929657B2 JP 27704599 A JP27704599 A JP 27704599A JP 27704599 A JP27704599 A JP 27704599A JP 3929657 B2 JP3929657 B2 JP 3929657B2
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Prior art keywords
group iii
crystal
iii nitride
crystal growth
melt
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Japanese (ja)
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JP2001102316A (ja
JP2001102316A5 (enExample
Inventor
正二 皿山
昌彦 島田
久典 山根
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP27704599A priority Critical patent/JP3929657B2/ja
Priority to US09/590,063 priority patent/US6592663B1/en
Publication of JP2001102316A publication Critical patent/JP2001102316A/ja
Priority to US10/601,301 priority patent/US7250640B2/en
Publication of JP2001102316A5 publication Critical patent/JP2001102316A5/ja
Priority to US11/408,656 priority patent/US7508003B2/en
Application granted granted Critical
Publication of JP3929657B2 publication Critical patent/JP3929657B2/ja
Priority to US12/367,013 priority patent/US8591647B2/en
Priority to US14/057,690 priority patent/US20140044970A1/en
Priority to US14/619,237 priority patent/US9869033B2/en
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP27704599A 1999-06-09 1999-09-29 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法 Expired - Lifetime JP3929657B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP27704599A JP3929657B2 (ja) 1999-09-29 1999-09-29 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法
US09/590,063 US6592663B1 (en) 1999-06-09 2000-06-08 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US10/601,301 US7250640B2 (en) 1999-06-09 2003-06-13 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US11/408,656 US7508003B2 (en) 1999-06-09 2006-04-20 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US12/367,013 US8591647B2 (en) 1999-06-09 2009-02-06 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US14/057,690 US20140044970A1 (en) 1999-06-09 2013-10-18 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE
US14/619,237 US9869033B2 (en) 1999-06-09 2015-02-11 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

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JP27704599A JP3929657B2 (ja) 1999-09-29 1999-09-29 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法

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JP2006172448A Division JP2007001858A (ja) 2006-06-22 2006-06-22 結晶製造装置、ｉｉｉ族窒化物結晶および半導体デバイス

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JP2001102316A5 JP2001102316A5 (enExample) 2006-03-30
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104962995A (zh) * 2015-07-23 2015-10-07 北京大学东莞光电研究院 一种氮化物单晶的生长装置及方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319545A (ja) * 2001-04-20 2002-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系結晶の製造方法および結晶成長用基材
JP4640899B2 (ja) * 2001-06-28 2011-03-02 株式会社リコー Ｉｉｉ族窒化物結晶成長装置
US7001457B2 (en) 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP5229103B2 (ja) * 2003-03-25 2013-07-03 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4457576B2 (ja) * 2003-05-08 2010-04-28 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物結晶およびその製造方法
JP4534631B2 (ja) 2003-10-31 2010-09-01 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP5299213B2 (ja) * 2003-10-31 2013-09-25 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US20070196942A1 (en) * 2003-12-26 2007-08-23 Yusuke Mori Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same
JP2005194146A (ja) * 2004-01-08 2005-07-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法
WO2005085503A1 (ja) * 2004-03-09 2005-09-15 Dai Nippon Printing Co., Ltd. コランダム結晶の製造方法
JP2005263511A (ja) * 2004-03-16 2005-09-29 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶および半導体デバイス
US7794539B2 (en) 2004-03-31 2010-09-14 Panasonic Corporation Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
JP4790607B2 (ja) 2004-04-27 2011-10-12 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶製造装置およびｉｉｉ族元素窒化物結晶製造方法
US7905958B2 (en) 2004-05-19 2011-03-15 Sumitomo Electric Industries, Ltd. Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device
WO2006003955A1 (ja) * 2004-06-30 2006-01-12 Matsushita Electric Industrial Co., Ltd. 音響光学素子及びそれを用いた光描画装置
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
TW200706710A (en) 2005-05-12 2007-02-16 Ricoh Co Ltd Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
CN101370971A (zh) 2006-02-13 2009-02-18 日本碍子株式会社 从助熔剂中回收钠金属的方法
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
CN101583745B (zh) 2006-11-14 2012-07-25 国立大学法人大阪大学 GaN晶体的制造方法、GaN晶体、GaN晶体基板、半导体装置及GaN晶体制造装置
US7708833B2 (en) 2007-03-13 2010-05-04 Toyoda Gosei Co., Ltd. Crystal growing apparatus
JP4956515B2 (ja) * 2008-09-26 2012-06-20 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104962995A (zh) * 2015-07-23 2015-10-07 北京大学东莞光电研究院 一种氮化物单晶的生长装置及方法
CN104962995B (zh) * 2015-07-23 2017-07-28 北京大学东莞光电研究院 一种氮化物单晶的生长装置及方法

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