JP3929307B2 - 水性アルカリ可溶性樹脂および感光性樹脂組成物 - Google Patents
水性アルカリ可溶性樹脂および感光性樹脂組成物 Download PDFInfo
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- JP3929307B2 JP3929307B2 JP2001400619A JP2001400619A JP3929307B2 JP 3929307 B2 JP3929307 B2 JP 3929307B2 JP 2001400619 A JP2001400619 A JP 2001400619A JP 2001400619 A JP2001400619 A JP 2001400619A JP 3929307 B2 JP3929307 B2 JP 3929307B2
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- YPPVLYIFEAESGO-UHFFFAOYSA-N [2,3-bis(methylsulfonyloxy)phenyl] methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=CC(OS(C)(=O)=O)=C1OS(C)(=O)=O YPPVLYIFEAESGO-UHFFFAOYSA-N 0.000 description 1
- VRVKKKKXKVCPEW-UHFFFAOYSA-N [2-[2-(hydroxymethyl)phenoxy]phenyl]methanol Chemical group OCC1=CC=CC=C1OC1=CC=CC=C1CO VRVKKKKXKVCPEW-UHFFFAOYSA-N 0.000 description 1
- SQAMZFDWYRVIMG-UHFFFAOYSA-N [3,5-bis(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC(CO)=CC(CO)=C1 SQAMZFDWYRVIMG-UHFFFAOYSA-N 0.000 description 1
- DTYJRRQQOLBRGH-UHFFFAOYSA-N [3-(hydroxymethyl)naphthalen-2-yl]methanol Chemical group C1=CC=C2C=C(CO)C(CO)=CC2=C1 DTYJRRQQOLBRGH-UHFFFAOYSA-N 0.000 description 1
- BWVAOONFBYYRHY-UHFFFAOYSA-N [4-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=C(CO)C=C1 BWVAOONFBYYRHY-UHFFFAOYSA-N 0.000 description 1
- GSHJWFSWKUADLL-UHFFFAOYSA-N [8-(hydroxymethyl)anthracen-1-yl]methanol Chemical group C1=CC(CO)=C2C=C3C(CO)=CC=CC3=CC2=C1 GSHJWFSWKUADLL-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- YUENFNPLGJCNRB-UHFFFAOYSA-N anthracen-1-amine Chemical compound C1=CC=C2C=C3C(N)=CC=CC3=CC2=C1 YUENFNPLGJCNRB-UHFFFAOYSA-N 0.000 description 1
- JKISVKJHKRVBSB-UHFFFAOYSA-N anthracen-1-yl acetate Chemical compound C1=CC=C2C=C3C(OC(=O)C)=CC=CC3=CC2=C1 JKISVKJHKRVBSB-UHFFFAOYSA-N 0.000 description 1
- ZMUUBYLNJMTHBS-UHFFFAOYSA-N anthracen-2-ylmethanol Chemical compound C1=CC=CC2=CC3=CC(CO)=CC=C3C=C21 ZMUUBYLNJMTHBS-UHFFFAOYSA-N 0.000 description 1
- TZIQWQARHPGHIG-UHFFFAOYSA-N anthrarobin Chemical compound C1=CC=CC2=CC3=C(O)C(O)=CC=C3C(O)=C21 TZIQWQARHPGHIG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000008098 formaldehyde solution Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- XOOMNEFVDUTJPP-UHFFFAOYSA-N naphthalene-1,3-diol Chemical compound C1=CC=CC2=CC(O)=CC(O)=C21 XOOMNEFVDUTJPP-UHFFFAOYSA-N 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
- DFQICHCWIIJABH-UHFFFAOYSA-N naphthalene-2,7-diol Chemical compound C1=CC(O)=CC2=CC(O)=CC=C21 DFQICHCWIIJABH-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004533 oil dispersion Substances 0.000 description 1
- 150000002896 organic halogen compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical compound CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 description 1
- BNWCETAHAJSBFG-UHFFFAOYSA-N tert-butyl 2-bromoacetate Chemical compound CC(C)(C)OC(=O)CBr BNWCETAHAJSBFG-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001400619A JP3929307B2 (ja) | 2001-12-28 | 2001-12-28 | 水性アルカリ可溶性樹脂および感光性樹脂組成物 |
| TW091124701A TW594392B (en) | 2001-12-28 | 2002-10-24 | Aqueous alkali-soluble resins, radiation sensitive resists, photo mask, and method of manufacturing electronics device |
| CNB021513872A CN1264887C (zh) | 2001-12-28 | 2002-11-20 | 水性碱可溶性树脂、感光性树脂组合物、光掩模和电子装置的制造方法 |
| US10/299,692 US7005216B2 (en) | 2001-12-28 | 2002-11-20 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001400619A JP3929307B2 (ja) | 2001-12-28 | 2001-12-28 | 水性アルカリ可溶性樹脂および感光性樹脂組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003201324A JP2003201324A (ja) | 2003-07-18 |
| JP2003201324A5 JP2003201324A5 (enExample) | 2005-06-23 |
| JP3929307B2 true JP3929307B2 (ja) | 2007-06-13 |
Family
ID=19189640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001400619A Expired - Fee Related JP3929307B2 (ja) | 2001-12-28 | 2001-12-28 | 水性アルカリ可溶性樹脂および感光性樹脂組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7005216B2 (enExample) |
| JP (1) | JP3929307B2 (enExample) |
| CN (1) | CN1264887C (enExample) |
| TW (1) | TW594392B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308002A (ja) * | 2000-02-15 | 2001-11-02 | Canon Inc | フォトマスクを用いたパターン作製方法、及びパターン作製装置 |
| KR100512171B1 (ko) * | 2003-01-24 | 2005-09-02 | 삼성전자주식회사 | 하층 레지스트용 조성물 |
| US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
| US7127830B2 (en) * | 2004-08-02 | 2006-10-31 | Wafertech, Llc | Reticle carrier apparatus and method that tilts reticle for drying |
| CN100409073C (zh) * | 2004-12-30 | 2008-08-06 | 财团法人工业技术研究院 | 碱可溶树脂与包含该树脂的感旋光性组合物 |
| US7460209B2 (en) * | 2005-03-28 | 2008-12-02 | Intel Corporation | Advanced mask patterning with patterning layer |
| KR101069434B1 (ko) * | 2009-03-10 | 2011-09-30 | 주식회사 하이닉스반도체 | 자기조립분자층을 이용한 포토마스크 제조방법 |
| JP5549107B2 (ja) * | 2009-04-20 | 2014-07-16 | Dic株式会社 | ノボラック樹脂の製造方法 |
| JP5742715B2 (ja) * | 2009-09-15 | 2015-07-01 | 三菱瓦斯化学株式会社 | 芳香族炭化水素樹脂及びリソグラフィー用下層膜形成組成物 |
| EP2532710B1 (en) * | 2010-02-03 | 2018-08-22 | DIC Corporation | Phenol resin composition, curable resin composition, cured products thereof, and printed circuit board |
| JP5630181B2 (ja) * | 2010-03-05 | 2014-11-26 | 大日本印刷株式会社 | ネガ型レジスト組成物、当該レジスト組成物を用いたレリーフパターンの製造方法及びフォトマスクの製造方法 |
| EP2660257B1 (en) * | 2010-12-28 | 2018-09-19 | Mitsubishi Gas Chemical Company, Inc. | Aromatic hydrocarbon resin, composition for forming lithographic underlayer film, and method for forming multilayer resist pattern |
| JP5485188B2 (ja) * | 2011-01-14 | 2014-05-07 | 信越化学工業株式会社 | レジスト下層膜材料及びこれを用いたパターン形成方法 |
| JP5953811B2 (ja) * | 2012-02-24 | 2016-07-20 | Dic株式会社 | ポジ型フォトレジスト組成物 |
| WO2015083748A1 (ja) * | 2013-12-04 | 2015-06-11 | 日本化薬株式会社 | フェノール樹脂、エポキシ樹脂、エポキシ樹脂組成物、およびその硬化物 |
| CN106458812B (zh) * | 2014-05-15 | 2019-03-26 | Dic株式会社 | 含改性酚羟基化合物、含改性酚羟基化合物的制法、感光性组合物、保护材料及保护涂膜 |
| WO2015190233A1 (ja) * | 2014-06-12 | 2015-12-17 | Dic株式会社 | 永久膜用感光性組成物、レジスト材料、及び塗膜 |
| JP6028883B1 (ja) * | 2015-01-16 | 2016-11-24 | Dic株式会社 | レジスト永久膜用硬化性組成物及びレジスト永久膜 |
| KR102832675B1 (ko) * | 2016-09-20 | 2025-07-14 | 삼성전자주식회사 | 레티클 패턴들의 임계치수 보정 방법 및 그를 포함하는 레티클 제조 방법 |
| KR102646796B1 (ko) * | 2017-09-13 | 2024-03-13 | 마테리온 코포레이션 | 다중스펙트럼 필터 배열 상의 불투명 애퍼처 마스크로서의 포토레지스트 |
| US11675266B2 (en) * | 2021-04-15 | 2023-06-13 | Industrial Technology Research Institute | Photosensitive compound, photosensitive composition, and patterning method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3105234B2 (ja) | 1990-09-28 | 2000-10-30 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPH05289307A (ja) | 1992-04-13 | 1993-11-05 | Matsushita Electric Ind Co Ltd | レチクルおよびレチクル製造方法 |
| JP3749083B2 (ja) * | 2000-04-25 | 2006-02-22 | 株式会社ルネサステクノロジ | 電子装置の製造方法 |
-
2001
- 2001-12-28 JP JP2001400619A patent/JP3929307B2/ja not_active Expired - Fee Related
-
2002
- 2002-10-24 TW TW091124701A patent/TW594392B/zh not_active IP Right Cessation
- 2002-11-20 US US10/299,692 patent/US7005216B2/en not_active Expired - Lifetime
- 2002-11-20 CN CNB021513872A patent/CN1264887C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1264887C (zh) | 2006-07-19 |
| US7005216B2 (en) | 2006-02-28 |
| TW594392B (en) | 2004-06-21 |
| US20030129505A1 (en) | 2003-07-10 |
| CN1428358A (zh) | 2003-07-09 |
| JP2003201324A (ja) | 2003-07-18 |
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