CN1264887C - 水性碱可溶性树脂、感光性树脂组合物、光掩模和电子装置的制造方法 - Google Patents

水性碱可溶性树脂、感光性树脂组合物、光掩模和电子装置的制造方法 Download PDF

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Publication number
CN1264887C
CN1264887C CNB021513872A CN02151387A CN1264887C CN 1264887 C CN1264887 C CN 1264887C CN B021513872 A CNB021513872 A CN B021513872A CN 02151387 A CN02151387 A CN 02151387A CN 1264887 C CN1264887 C CN 1264887C
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China
Prior art keywords
photomask
general formula
hydroxyl
group
excimer laser
Prior art date
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Expired - Fee Related
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CNB021513872A
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English (en)
Chinese (zh)
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CN1428358A (zh
Inventor
白石洋
右高园子
服部孝司
新井唯
逆水登志夫
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Renesas Electronics Corp
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Hitachi Ltd
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Publication date
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Publication of CN1428358A publication Critical patent/CN1428358A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
CNB021513872A 2001-12-28 2002-11-20 水性碱可溶性树脂、感光性树脂组合物、光掩模和电子装置的制造方法 Expired - Fee Related CN1264887C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP400619/2001 2001-12-28
JP2001400619A JP3929307B2 (ja) 2001-12-28 2001-12-28 水性アルカリ可溶性樹脂および感光性樹脂組成物

Publications (2)

Publication Number Publication Date
CN1428358A CN1428358A (zh) 2003-07-09
CN1264887C true CN1264887C (zh) 2006-07-19

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Family Applications (1)

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CNB021513872A Expired - Fee Related CN1264887C (zh) 2001-12-28 2002-11-20 水性碱可溶性树脂、感光性树脂组合物、光掩模和电子装置的制造方法

Country Status (4)

Country Link
US (1) US7005216B2 (enExample)
JP (1) JP3929307B2 (enExample)
CN (1) CN1264887C (enExample)
TW (1) TW594392B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308002A (ja) * 2000-02-15 2001-11-02 Canon Inc フォトマスクを用いたパターン作製方法、及びパターン作製装置
KR100512171B1 (ko) * 2003-01-24 2005-09-02 삼성전자주식회사 하층 레지스트용 조성물
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
US7127830B2 (en) * 2004-08-02 2006-10-31 Wafertech, Llc Reticle carrier apparatus and method that tilts reticle for drying
CN100409073C (zh) * 2004-12-30 2008-08-06 财团法人工业技术研究院 碱可溶树脂与包含该树脂的感旋光性组合物
US7460209B2 (en) * 2005-03-28 2008-12-02 Intel Corporation Advanced mask patterning with patterning layer
KR101069434B1 (ko) * 2009-03-10 2011-09-30 주식회사 하이닉스반도체 자기조립분자층을 이용한 포토마스크 제조방법
JP5549107B2 (ja) * 2009-04-20 2014-07-16 Ｄｉｃ株式会社 ノボラック樹脂の製造方法
JP5742715B2 (ja) * 2009-09-15 2015-07-01 三菱瓦斯化学株式会社 芳香族炭化水素樹脂及びリソグラフィー用下層膜形成組成物
EP2532710B1 (en) * 2010-02-03 2018-08-22 DIC Corporation Phenol resin composition, curable resin composition, cured products thereof, and printed circuit board
JP5630181B2 (ja) * 2010-03-05 2014-11-26 大日本印刷株式会社 ネガ型レジスト組成物、当該レジスト組成物を用いたレリーフパターンの製造方法及びフォトマスクの製造方法
EP2660257B1 (en) * 2010-12-28 2018-09-19 Mitsubishi Gas Chemical Company, Inc. Aromatic hydrocarbon resin, composition for forming lithographic underlayer film, and method for forming multilayer resist pattern
JP5485188B2 (ja) * 2011-01-14 2014-05-07 信越化学工業株式会社 レジスト下層膜材料及びこれを用いたパターン形成方法
JP5953811B2 (ja) * 2012-02-24 2016-07-20 Dic株式会社 ポジ型フォトレジスト組成物
WO2015083748A1 (ja) * 2013-12-04 2015-06-11 日本化薬株式会社 フェノール樹脂、エポキシ樹脂、エポキシ樹脂組成物、およびその硬化物
CN106458812B (zh) * 2014-05-15 2019-03-26 Dic株式会社 含改性酚羟基化合物、含改性酚羟基化合物的制法、感光性组合物、保护材料及保护涂膜
WO2015190233A1 (ja) * 2014-06-12 2015-12-17 Dic株式会社 永久膜用感光性組成物、レジスト材料、及び塗膜
JP6028883B1 (ja) * 2015-01-16 2016-11-24 Dic株式会社 レジスト永久膜用硬化性組成物及びレジスト永久膜
KR102832675B1 (ko) * 2016-09-20 2025-07-14 삼성전자주식회사 레티클 패턴들의 임계치수 보정 방법 및 그를 포함하는 레티클 제조 방법
KR102646796B1 (ko) * 2017-09-13 2024-03-13 마테리온 코포레이션 다중스펙트럼 필터 배열 상의 불투명 애퍼처 마스크로서의 포토레지스트
US11675266B2 (en) * 2021-04-15 2023-06-13 Industrial Technology Research Institute Photosensitive compound, photosensitive composition, and patterning method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3105234B2 (ja) 1990-09-28 2000-10-30 株式会社日立製作所 半導体装置の製造方法
JPH05289307A (ja) 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JP3749083B2 (ja) * 2000-04-25 2006-02-22 株式会社ルネサステクノロジ 電子装置の製造方法

Also Published As

Publication number Publication date
US7005216B2 (en) 2006-02-28
JP3929307B2 (ja) 2007-06-13
TW594392B (en) 2004-06-21
US20030129505A1 (en) 2003-07-10
CN1428358A (zh) 2003-07-09
JP2003201324A (ja) 2003-07-18

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