JP3914722B2 - 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法 - Google Patents

水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法 Download PDF

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Publication number
JP3914722B2
JP3914722B2 JP2001191703A JP2001191703A JP3914722B2 JP 3914722 B2 JP3914722 B2 JP 3914722B2 JP 2001191703 A JP2001191703 A JP 2001191703A JP 2001191703 A JP2001191703 A JP 2001191703A JP 3914722 B2 JP3914722 B2 JP 3914722B2
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JP
Japan
Prior art keywords
resist stripping
concentration
water
stripping solution
solution
Prior art date
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Expired - Fee Related
Application number
JP2001191703A
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English (en)
Japanese (ja)
Other versions
JP2003005387A (ja
Inventor
俊元 中川
優子 片桐
修 小川
悟 森田
誠 菊川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagase and Co Ltd
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Nagase and Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagase and Co Ltd filed Critical Nagase and Co Ltd
Priority to JP2001191703A priority Critical patent/JP3914722B2/ja
Priority to TW091112934A priority patent/TWI312105B/zh
Priority to KR1020020035235A priority patent/KR20030023456A/ko
Priority to US10/183,833 priority patent/US7109037B2/en
Priority to CNB021470391A priority patent/CN1295568C/zh
Publication of JP2003005387A publication Critical patent/JP2003005387A/ja
Application granted granted Critical
Publication of JP3914722B2 publication Critical patent/JP3914722B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/12—Condition responsive control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2001191703A 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法 Expired - Fee Related JP3914722B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001191703A JP3914722B2 (ja) 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法
TW091112934A TWI312105B (enExample) 2001-06-25 2002-06-13
KR1020020035235A KR20030023456A (ko) 2001-06-25 2002-06-24 수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법
US10/183,833 US7109037B2 (en) 2001-06-25 2002-06-25 Water-based resist stripping liquid management apparatus and water-based resist stripping liquid management method
CNB021470391A CN1295568C (zh) 2001-06-25 2002-06-25 水系保护膜剥离液管理装置及水系保护膜剥离液管理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001191703A JP3914722B2 (ja) 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法

Publications (2)

Publication Number Publication Date
JP2003005387A JP2003005387A (ja) 2003-01-08
JP3914722B2 true JP3914722B2 (ja) 2007-05-16

Family

ID=19030286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001191703A Expired - Fee Related JP3914722B2 (ja) 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法

Country Status (5)

Country Link
US (1) US7109037B2 (enExample)
JP (1) JP3914722B2 (enExample)
KR (1) KR20030023456A (enExample)
CN (1) CN1295568C (enExample)
TW (1) TWI312105B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652044B1 (ko) * 2001-12-18 2006-11-30 엘지.필립스 엘시디 주식회사 스트립 장치
US7867696B2 (en) * 2004-04-15 2011-01-11 The Boeing Company Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes
US20070289905A1 (en) * 2006-06-20 2007-12-20 Biofuels Automation, Inc. System for managing solution for cleaning fermentation tanks
US8545636B2 (en) * 2006-07-27 2013-10-01 Atmel Corporation Conductivity control of water content in solvent strip baths
US7935642B2 (en) * 2007-11-16 2011-05-03 General Electric Company Replenishment method for an advanced coating removal stripping solution
KR20140030185A (ko) * 2011-05-20 2014-03-11 파나소닉 주식회사 포토레지스트용 박리액, 박리액 리사이클 시스템과 운전 방법 및 박리액의 리사이클 방법
JP5712051B2 (ja) * 2011-05-20 2015-05-07 パナソニック株式会社 剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法
JP2013183080A (ja) * 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
US8877084B2 (en) 2012-06-22 2014-11-04 General Electric Company Method for refreshing an acid bath solution
JP6041260B2 (ja) * 2012-10-11 2016-12-07 パナソニックＩｐマネジメント株式会社 レジスト剥離液の調合槽からのサンプリング方法およびサンプリング装置
JP6249217B2 (ja) * 2013-12-27 2017-12-20 パナソニックＩｐマネジメント株式会社 レジスト剥離液の組成比維持装置およびレジスト剥離液の組成比維持方法
JP6681066B2 (ja) * 2016-03-14 2020-04-15 株式会社平間理化研究所 水系レジスト剥離液の調製装置および非水系レジスト剥離液の調製装置
JP7718815B2 (ja) 2017-04-21 2025-08-05 シルラゼン， インコーポレイテッド 腫瘍溶解性ワクシニアウイルスおよびチェックポイント阻害剤の併用療法
JP7770107B2 (ja) * 2021-05-10 2025-11-14 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW256929B (enExample) * 1993-12-29 1995-09-11 Hirama Rika Kenkyusho Kk
JP2602179B2 (ja) 1993-12-29 1997-04-23 株式会社平間理化研究所 レジスト剥離液管理装置
JP3093975B2 (ja) 1996-07-02 2000-10-03 株式会社平間理化研究所 レジスト剥離液管理装置
JPH1083946A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd レジスト剥離液管理方法及びレジスト剥離装置
JP3126690B2 (ja) 1997-10-27 2001-01-22 株式会社平間理化研究所 レジスト剥離液管理装置
KR100306649B1 (ko) * 1997-12-03 2001-11-14 주식회사 동진쎄미켐 레지스트박리액,이를이용한레지스트박리방법,레지스트박리액재생장치,및레지스트박리액관리장치
JP3630543B2 (ja) * 1998-02-05 2005-03-16 大日本スクリーン製造株式会社 基板処理装置
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
JP2001223153A (ja) * 2000-02-10 2001-08-17 Mitsubishi Electric Corp レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7109037B2 (en) 2006-09-19
US20020197869A1 (en) 2002-12-26
TWI312105B (enExample) 2009-07-11
KR20030023456A (ko) 2003-03-19
JP2003005387A (ja) 2003-01-08
CN1295568C (zh) 2007-01-17
CN1407411A (zh) 2003-04-02

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