KR20030023456A - 수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법 - Google Patents
수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법 Download PDFInfo
- Publication number
- KR20030023456A KR20030023456A KR1020020035235A KR20020035235A KR20030023456A KR 20030023456 A KR20030023456 A KR 20030023456A KR 1020020035235 A KR1020020035235 A KR 1020020035235A KR 20020035235 A KR20020035235 A KR 20020035235A KR 20030023456 A KR20030023456 A KR 20030023456A
- Authority
- KR
- South Korea
- Prior art keywords
- resist stripping
- liquid
- concentration
- aqueous
- aqueous resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 209
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 36
- 239000000243 solution Substances 0.000 claims abstract description 61
- 230000006866 deterioration Effects 0.000 claims abstract description 55
- 239000011550 stock solution Substances 0.000 claims abstract description 21
- 238000011069 regeneration method Methods 0.000 claims abstract description 17
- 230000008929 regeneration Effects 0.000 claims abstract description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 29
- 238000007726 management method Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 15
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 14
- 239000001569 carbon dioxide Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 230000002542 deteriorative effect Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 239000013626 chemical specie Substances 0.000 claims description 3
- 238000002835 absorbance Methods 0.000 abstract description 39
- 238000011282 treatment Methods 0.000 abstract description 25
- 238000005259 measurement Methods 0.000 abstract description 23
- 206010040844 Skin exfoliation Diseases 0.000 description 32
- 239000000758 substrate Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 19
- 238000012545 processing Methods 0.000 description 16
- QENMPTUFXWVPQZ-UHFFFAOYSA-N (2-hydroxyethylazaniumyl)formate Chemical compound OCCNC(O)=O QENMPTUFXWVPQZ-UHFFFAOYSA-N 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 11
- 238000006731 degradation reaction Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 238000011481 absorbance measurement Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- KJAMZCVTJDTESW-UHFFFAOYSA-N tiracizine Chemical compound C1CC2=CC=CC=C2N(C(=O)CN(C)C)C2=CC(NC(=O)OCC)=CC=C21 KJAMZCVTJDTESW-UHFFFAOYSA-N 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/12—Condition responsive control
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001191703A JP3914722B2 (ja) | 2001-06-25 | 2001-06-25 | 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法 |
| JPJP-P-2001-00191703 | 2001-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030023456A true KR20030023456A (ko) | 2003-03-19 |
Family
ID=19030286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020035235A Ceased KR20030023456A (ko) | 2001-06-25 | 2002-06-24 | 수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7109037B2 (enExample) |
| JP (1) | JP3914722B2 (enExample) |
| KR (1) | KR20030023456A (enExample) |
| CN (1) | CN1295568C (enExample) |
| TW (1) | TWI312105B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100652044B1 (ko) * | 2001-12-18 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | 스트립 장치 |
| US7867696B2 (en) * | 2004-04-15 | 2011-01-11 | The Boeing Company | Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes |
| US20070289905A1 (en) * | 2006-06-20 | 2007-12-20 | Biofuels Automation, Inc. | System for managing solution for cleaning fermentation tanks |
| US8545636B2 (en) * | 2006-07-27 | 2013-10-01 | Atmel Corporation | Conductivity control of water content in solvent strip baths |
| US7935642B2 (en) * | 2007-11-16 | 2011-05-03 | General Electric Company | Replenishment method for an advanced coating removal stripping solution |
| CN103688222B (zh) * | 2011-05-20 | 2016-11-16 | 松下知识产权经营株式会社 | 光致抗蚀剂用剥离液、剥离液循环系统和运转方法以及剥离液的循环方法 |
| JP5712051B2 (ja) * | 2011-05-20 | 2015-05-07 | パナソニック株式会社 | 剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法 |
| JP2013183080A (ja) * | 2012-03-02 | 2013-09-12 | Mitsubishi Gas Chemical Co Inc | レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム |
| US8877084B2 (en) | 2012-06-22 | 2014-11-04 | General Electric Company | Method for refreshing an acid bath solution |
| JP6041260B2 (ja) * | 2012-10-11 | 2016-12-07 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液の調合槽からのサンプリング方法およびサンプリング装置 |
| JP6249217B2 (ja) * | 2013-12-27 | 2017-12-20 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液の組成比維持装置およびレジスト剥離液の組成比維持方法 |
| JP6681066B2 (ja) * | 2016-03-14 | 2020-04-15 | 株式会社平間理化研究所 | 水系レジスト剥離液の調製装置および非水系レジスト剥離液の調製装置 |
| EP3612201B1 (en) | 2017-04-21 | 2023-10-25 | Sillajen, Inc. | Oncolytic vaccinia virus and checkpoint inhibitor combination therapy |
| JP7770107B2 (ja) * | 2021-05-10 | 2025-11-14 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1083946A (ja) * | 1996-09-06 | 1998-03-31 | Fujitsu Ltd | レジスト剥離液管理方法及びレジスト剥離装置 |
| KR980011722A (ko) * | 1996-07-02 | 1998-04-30 | 도시모또 나까가와 | 레지스터박리액관리장치 |
| KR19990036502A (ko) * | 1997-10-27 | 1999-05-25 | 나가세 히데오 | 레지스트박리액 관리장치 |
| KR19990062480A (ko) * | 1997-12-03 | 1999-07-26 | 이부섭 | 레지스트 박리액, 이를 이용한 레지스트 박리방법, 레지스트 박리액 재생장치, 및 레지스트 박리액 관리장치 |
| JPH11224873A (ja) * | 1998-02-05 | 1999-08-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2000338684A (ja) * | 1999-05-26 | 2000-12-08 | Nagase & Co Ltd | 基板表面処理装置 |
| JP2001223153A (ja) * | 2000-02-10 | 2001-08-17 | Mitsubishi Electric Corp | レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2602179B2 (ja) | 1993-12-29 | 1997-04-23 | 株式会社平間理化研究所 | レジスト剥離液管理装置 |
| TW256929B (enExample) * | 1993-12-29 | 1995-09-11 | Hirama Rika Kenkyusho Kk | |
| US6235641B1 (en) | 1998-10-30 | 2001-05-22 | Fsi International Inc. | Method and system to control the concentration of dissolved gas in a liquid |
-
2001
- 2001-06-25 JP JP2001191703A patent/JP3914722B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-13 TW TW091112934A patent/TWI312105B/zh not_active IP Right Cessation
- 2002-06-24 KR KR1020020035235A patent/KR20030023456A/ko not_active Ceased
- 2002-06-25 US US10/183,833 patent/US7109037B2/en not_active Expired - Fee Related
- 2002-06-25 CN CNB021470391A patent/CN1295568C/zh not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR980011722A (ko) * | 1996-07-02 | 1998-04-30 | 도시모또 나까가와 | 레지스터박리액관리장치 |
| JPH1083946A (ja) * | 1996-09-06 | 1998-03-31 | Fujitsu Ltd | レジスト剥離液管理方法及びレジスト剥離装置 |
| KR19990036502A (ko) * | 1997-10-27 | 1999-05-25 | 나가세 히데오 | 레지스트박리액 관리장치 |
| KR19990062480A (ko) * | 1997-12-03 | 1999-07-26 | 이부섭 | 레지스트 박리액, 이를 이용한 레지스트 박리방법, 레지스트 박리액 재생장치, 및 레지스트 박리액 관리장치 |
| JPH11224873A (ja) * | 1998-02-05 | 1999-08-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2000338684A (ja) * | 1999-05-26 | 2000-12-08 | Nagase & Co Ltd | 基板表面処理装置 |
| JP2001223153A (ja) * | 2000-02-10 | 2001-08-17 | Mitsubishi Electric Corp | レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7109037B2 (en) | 2006-09-19 |
| JP3914722B2 (ja) | 2007-05-16 |
| JP2003005387A (ja) | 2003-01-08 |
| TWI312105B (enExample) | 2009-07-11 |
| US20020197869A1 (en) | 2002-12-26 |
| CN1295568C (zh) | 2007-01-17 |
| CN1407411A (zh) | 2003-04-02 |
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