CN1295568C - 水系保护膜剥离液管理装置及水系保护膜剥离液管理方法 - Google Patents

水系保护膜剥离液管理装置及水系保护膜剥离液管理方法 Download PDF

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Publication number
CN1295568C
CN1295568C CNB021470391A CN02147039A CN1295568C CN 1295568 C CN1295568 C CN 1295568C CN B021470391 A CNB021470391 A CN B021470391A CN 02147039 A CN02147039 A CN 02147039A CN 1295568 C CN1295568 C CN 1295568C
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CN
China
Prior art keywords
protective film
water
film stripping
concentration
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021470391A
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English (en)
Chinese (zh)
Other versions
CN1407411A (zh
Inventor
中川俊元
片桐优子
小川修
森田悟
菊川诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagase Cms Science And Technology Co ltd
Nagase and Co Ltd
Hirama Laboratories Co Ltd
Original Assignee
Nagase Cms Science And Technology Co ltd
Nagase and Co Ltd
Hirama Laboratories Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagase Cms Science And Technology Co ltd, Nagase and Co Ltd, Hirama Laboratories Co Ltd filed Critical Nagase Cms Science And Technology Co ltd
Publication of CN1407411A publication Critical patent/CN1407411A/zh
Application granted granted Critical
Publication of CN1295568C publication Critical patent/CN1295568C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/12—Condition responsive control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB021470391A 2001-06-25 2002-06-25 水系保护膜剥离液管理装置及水系保护膜剥离液管理方法 Expired - Fee Related CN1295568C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP191703/2001 2001-06-25
JP2001191703A JP3914722B2 (ja) 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法

Publications (2)

Publication Number Publication Date
CN1407411A CN1407411A (zh) 2003-04-02
CN1295568C true CN1295568C (zh) 2007-01-17

Family

ID=19030286

Family Applications (1)

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CNB021470391A Expired - Fee Related CN1295568C (zh) 2001-06-25 2002-06-25 水系保护膜剥离液管理装置及水系保护膜剥离液管理方法

Country Status (5)

Country Link
US (1) US7109037B2 (enExample)
JP (1) JP3914722B2 (enExample)
KR (1) KR20030023456A (enExample)
CN (1) CN1295568C (enExample)
TW (1) TWI312105B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107193189A (zh) * 2016-03-14 2017-09-22 株式会社平间理化研究所 水系抗蚀剂剥离液的调制装置以及非水系抗蚀剂剥离液的调制装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652044B1 (ko) * 2001-12-18 2006-11-30 엘지.필립스 엘시디 주식회사 스트립 장치
US7867696B2 (en) * 2004-04-15 2011-01-11 The Boeing Company Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes
US20070289905A1 (en) * 2006-06-20 2007-12-20 Biofuels Automation, Inc. System for managing solution for cleaning fermentation tanks
US8545636B2 (en) * 2006-07-27 2013-10-01 Atmel Corporation Conductivity control of water content in solvent strip baths
US7935642B2 (en) * 2007-11-16 2011-05-03 General Electric Company Replenishment method for an advanced coating removal stripping solution
KR20140030185A (ko) * 2011-05-20 2014-03-11 파나소닉 주식회사 포토레지스트용 박리액, 박리액 리사이클 시스템과 운전 방법 및 박리액의 리사이클 방법
JP5712051B2 (ja) * 2011-05-20 2015-05-07 パナソニック株式会社 剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法
JP2013183080A (ja) * 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
US8877084B2 (en) 2012-06-22 2014-11-04 General Electric Company Method for refreshing an acid bath solution
JP6041260B2 (ja) * 2012-10-11 2016-12-07 パナソニックＩｐマネジメント株式会社 レジスト剥離液の調合槽からのサンプリング方法およびサンプリング装置
JP6249217B2 (ja) * 2013-12-27 2017-12-20 パナソニックＩｐマネジメント株式会社 レジスト剥離液の組成比維持装置およびレジスト剥離液の組成比維持方法
JP7718815B2 (ja) 2017-04-21 2025-08-05 シルラゼン， インコーポレイテッド 腫瘍溶解性ワクシニアウイルスおよびチェックポイント阻害剤の併用療法
JP7770107B2 (ja) * 2021-05-10 2025-11-14 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1108767A (zh) * 1993-12-29 1995-09-20 株式会社平间理化研究所 光刻胶剥离液管理装置
CN1174343A (zh) * 1996-07-02 1998-02-25 株式会社平间理化研究所 光刻胶剥离液管理装置
CN1215850A (zh) * 1997-10-27 1999-05-05 株式会社平间理化研究所 抗蚀剂剥离液控制装置
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602179B2 (ja) 1993-12-29 1997-04-23 株式会社平間理化研究所 レジスト剥離液管理装置
JPH1083946A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd レジスト剥離液管理方法及びレジスト剥離装置
KR100306649B1 (ko) * 1997-12-03 2001-11-14 주식회사 동진쎄미켐 레지스트박리액,이를이용한레지스트박리방법,레지스트박리액재생장치,및레지스트박리액관리장치
JP3630543B2 (ja) * 1998-02-05 2005-03-16 大日本スクリーン製造株式会社 基板処理装置
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
JP2001223153A (ja) * 2000-02-10 2001-08-17 Mitsubishi Electric Corp レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1108767A (zh) * 1993-12-29 1995-09-20 株式会社平间理化研究所 光刻胶剥离液管理装置
CN1174343A (zh) * 1996-07-02 1998-02-25 株式会社平间理化研究所 光刻胶剥离液管理装置
CN1215850A (zh) * 1997-10-27 1999-05-05 株式会社平间理化研究所 抗蚀剂剥离液控制装置
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107193189A (zh) * 2016-03-14 2017-09-22 株式会社平间理化研究所 水系抗蚀剂剥离液的调制装置以及非水系抗蚀剂剥离液的调制装置

Also Published As

Publication number Publication date
US7109037B2 (en) 2006-09-19
JP3914722B2 (ja) 2007-05-16
US20020197869A1 (en) 2002-12-26
TWI312105B (enExample) 2009-07-11
KR20030023456A (ko) 2003-03-19
JP2003005387A (ja) 2003-01-08
CN1407411A (zh) 2003-04-02

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