JP3905979B2 - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ Download PDF

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Publication number
JP3905979B2
JP3905979B2 JP15450498A JP15450498A JP3905979B2 JP 3905979 B2 JP3905979 B2 JP 3905979B2 JP 15450498 A JP15450498 A JP 15450498A JP 15450498 A JP15450498 A JP 15450498A JP 3905979 B2 JP3905979 B2 JP 3905979B2
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JP
Japan
Prior art keywords
cell array
write
block
line
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15450498A
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English (en)
Japanese (ja)
Other versions
JPH11353886A5 (enExample
JPH11353886A (ja
Inventor
徹 丹沢
滋 渥美
博則 番場
誠司 山田
誠一 森
正男 栗山
伸朗 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15450498A priority Critical patent/JP3905979B2/ja
Priority to US09/324,775 priority patent/US6118697A/en
Publication of JPH11353886A publication Critical patent/JPH11353886A/ja
Priority to US09/592,661 priority patent/US6222773B1/en
Publication of JPH11353886A5 publication Critical patent/JPH11353886A5/ja
Application granted granted Critical
Publication of JP3905979B2 publication Critical patent/JP3905979B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP15450498A 1998-06-03 1998-06-03 不揮発性半導体メモリ Expired - Fee Related JP3905979B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP15450498A JP3905979B2 (ja) 1998-06-03 1998-06-03 不揮発性半導体メモリ
US09/324,775 US6118697A (en) 1998-06-03 1999-06-03 Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasing
US09/592,661 US6222773B1 (en) 1998-06-03 2000-06-13 Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15450498A JP3905979B2 (ja) 1998-06-03 1998-06-03 不揮発性半導体メモリ

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006227959A Division JP2006313644A (ja) 2006-08-24 2006-08-24 不揮発性半導体メモリ
JP2006227958A Division JP2006313643A (ja) 2006-08-24 2006-08-24 不揮発性半導体メモリ

Publications (3)

Publication Number Publication Date
JPH11353886A JPH11353886A (ja) 1999-12-24
JPH11353886A5 JPH11353886A5 (enExample) 2005-04-07
JP3905979B2 true JP3905979B2 (ja) 2007-04-18

Family

ID=15585697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15450498A Expired - Fee Related JP3905979B2 (ja) 1998-06-03 1998-06-03 不揮発性半導体メモリ

Country Status (2)

Country Link
US (2) US6118697A (enExample)
JP (1) JP3905979B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
JP4398551B2 (ja) * 1998-12-25 2010-01-13 株式会社東芝 半導体装置
JP3296319B2 (ja) * 1999-03-02 2002-06-24 日本電気株式会社 ワード線駆動回路及び半導体記憶装置
JP4055103B2 (ja) * 2000-10-02 2008-03-05 株式会社ルネサステクノロジ 不揮発性メモリおよびそれを内蔵した半導体集積回路並びに不揮発性メモリの書込み方法
JP3850016B2 (ja) * 2001-06-29 2006-11-29 シャープ株式会社 不揮発性半導体記憶装置
JP3708912B2 (ja) * 2001-09-12 2005-10-19 株式会社東芝 半導体集積回路装置
KR100476889B1 (ko) * 2002-04-04 2005-03-17 삼성전자주식회사 플래쉬메모리의 워드라인디코더
US7307884B2 (en) 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
GB2431026B (en) * 2004-07-30 2008-05-07 Spansion Llc Semiconductor device and writing method
US7925820B2 (en) 2004-09-30 2011-04-12 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device and program method therefor
KR100632367B1 (ko) 2004-11-22 2006-10-09 삼성전자주식회사 불휘발성 반도체 메모리 장치의 프로그램 비트 스캔표시회로
US7450433B2 (en) * 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
JP4683494B2 (ja) * 2005-02-10 2011-05-18 ルネサスエレクトロニクス株式会社 不揮発性半導体メモリ及び半導体装置
US7522457B2 (en) * 2005-03-31 2009-04-21 Sandisk Corporation Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7457166B2 (en) * 2005-03-31 2008-11-25 Sandisk Corporation Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7400537B2 (en) * 2005-03-31 2008-07-15 Sandisk Corporation Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
KR100706245B1 (ko) 2005-04-13 2007-04-11 삼성전자주식회사 비트 스캔 방식을 사용한 노어 플래시 메모리 장치 및그것의 프로그램 방법
US7215573B2 (en) * 2005-08-25 2007-05-08 Silicon Storage Technology, Inc. Method and apparatus for reducing operation disturbance
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
US7535766B2 (en) * 2006-10-13 2009-05-19 Sandisk Corporation Systems for partitioned soft programming in non-volatile memory
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
JP4666394B2 (ja) * 2007-07-09 2011-04-06 ルネサスエレクトロニクス株式会社 データ処理装置
JP5217848B2 (ja) * 2008-09-29 2013-06-19 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US8189390B2 (en) * 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
KR102384959B1 (ko) * 2015-10-30 2022-04-11 에스케이하이닉스 주식회사 저장 장치, 이를 포함하는 메모리 시스템 및 이의 동작 방법
TWI648739B (zh) * 2018-03-20 2019-01-21 大陸商深圳大心電子科技有限公司 記憶體管理方法與儲存控制器
JP7122936B2 (ja) * 2018-10-29 2022-08-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2023124708A (ja) * 2022-02-25 2023-09-06 ラピステクノロジー株式会社 半導体記憶装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586187B2 (ja) * 1990-07-16 1997-02-26 日本電気株式会社 半導体記憶装置
US5239505A (en) * 1990-12-28 1993-08-24 Intel Corporation Floating gate non-volatile memory with blocks and memory refresh
US5363330A (en) * 1991-01-28 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
JP2632104B2 (ja) * 1991-11-07 1997-07-23 三菱電機株式会社 不揮発性半導体記憶装置
US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
JPH09180473A (ja) * 1995-12-27 1997-07-11 Nec Corp 不揮発性半導体メモリ装置
KR100290282B1 (ko) * 1998-11-23 2001-05-15 윤종용 프로그램 시간을 단축할 수 있는 불 휘발성반도체메모리 장치

Also Published As

Publication number Publication date
US6222773B1 (en) 2001-04-24
US6118697A (en) 2000-09-12
JPH11353886A (ja) 1999-12-24

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