JP3905882B2 - 分離トレンチを有するトレンチキャパシタを製造する方法 - Google Patents
分離トレンチを有するトレンチキャパシタを製造する方法 Download PDFInfo
- Publication number
- JP3905882B2 JP3905882B2 JP2003502883A JP2003502883A JP3905882B2 JP 3905882 B2 JP3905882 B2 JP 3905882B2 JP 2003502883 A JP2003502883 A JP 2003502883A JP 2003502883 A JP2003502883 A JP 2003502883A JP 3905882 B2 JP3905882 B2 JP 3905882B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- trench
- oxide
- hard mask
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims description 67
- 238000002955 isolation Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005530 etching Methods 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 238000000926 separation method Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000005388 borosilicate glass Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000006227 byproduct Substances 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 238000005305 interferometry Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000001636 atomic emission spectroscopy Methods 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 241000287463 Phalacrocorax Species 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000075 oxide glass Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 PAD nitride Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/964—Roughened surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Description
12 シリコン層
20、30 トレンチキャパシタ
21、22、31、32 カラー酸化物
33 内部電極
34 トレンチキャパシタの下部
35 トレンチキャパシタの上部
341 第1の電極
342 誘電体
343 内部電極
40 ハードマスク
41 ハードマスク開口
42 窒化物パッド
43 シリコン層表面
50 分離トレンチ
51、52 分離トレンチの底部
Claims (12)
- 分離トレンチを有するトレンチキャパシタを製造する方法であって、
該方法は、
半導体基板のトレンチにトレンチキャパシタを形成することであって、該トレンチキャパシタは、外部電極と内部電極と該外部電極と該内部電極との間の誘電体とで形成された下部と、該トレンチの側壁にカラー酸化物で形成された上部とを有し、シリコン層は、該カラー酸化物の上で該トレンチキャパシタを覆い、ハードマスクは、該シリコン層を覆う、ことと、
該シリコン層の表面に達するように、該ハードマスクを開口することと、
第1のエッチング工程において、該カラー酸化物に達するまで、Cl 2 、HClまたはHBrを含むエッチングガスを用いてドライエッチングすることと、
第2のエッチング工程において、SiF 4 およびO 2 を含むエッチングガスを用いて該半導体基板と該カラー酸化物と該トレンチキャパシタの内部電極とをドライエッチングすることと
を包含する、方法。 - 前記第1の工程におけるエッチングガスは、ヘリウムガスおよび酸素ガスのうち少なくとも1つをさらに含む、請求項1に記載の方法。
- 前記第2の工程におけるエッチングガスは、アルゴンガスをさらに含む、請求項1に記載の方法。
- 前記第2の工程におけるエッチングガスは、CF4ガスをさらに含む、請求項3に記載の方法。
- 前記第1のエッチング工程中に、前記カラー酸化物から生成された副生成物が検出された場合、該第1のエッチング工程を終了し、前記第2のエッチング工程を開始することを包含する、請求項1に記載の方法。
- 干渉法を用いる測定から得られた信号に応答して、前記第1のエッチング工程を終了し、前記第2のエッチング工程を開始することを包含する、請求項1に記載の方法。
- 光学発光分光法を用いる測定から得られた信号に応答して、前記第1のエッチング工程を終了し、前記第2のエッチング工程を開始することを包含する、請求項1に記載の方法。
- 所定の期間の間、前記第1のエッチング工程を実行した後に、前記第2のエッチング工程を開始することを包含する、請求項1に記載の方法。
- 前記ハードマスクは、ホウケイ酸塩ガラスを含む、請求項1に記載の方法。
- 前記ハードマスクは、シリコン酸化物を含む、請求項1に記載の方法。
- カラー酸化物を有する少なくとも2つの隣接したトレンチキャパシタを前記半導体基板に形成し、該少なくとも2つのトレンチキャパシタに対して前記ハードマスクを形成することにより、前記第2のエッチング工程中に、互いに向かい合う該カラー酸化物の部分がエッチングされ、該第2のエッチング工程中に、互いに向かい合わない該カラー酸化物の部分が維持されることを包含する、請求項1に記載の方法。
- 前記カラー酸化物は、シリコン酸化物からなる分離酸化物である、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01113838A EP1265278A1 (en) | 2001-06-06 | 2001-06-06 | Method for manufacturing a trench capacitor with an isolation trench |
PCT/EP2002/006090 WO2002099875A1 (en) | 2001-06-06 | 2002-06-03 | Method for manufacturing a trench capacitor with an isolation trench |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004528730A JP2004528730A (ja) | 2004-09-16 |
JP2004528730A5 JP2004528730A5 (ja) | 2005-07-28 |
JP3905882B2 true JP3905882B2 (ja) | 2007-04-18 |
Family
ID=8177656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003502883A Expired - Fee Related JP3905882B2 (ja) | 2001-06-06 | 2002-06-03 | 分離トレンチを有するトレンチキャパシタを製造する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6855596B2 (ja) |
EP (1) | EP1265278A1 (ja) |
JP (1) | JP3905882B2 (ja) |
KR (1) | KR100596248B1 (ja) |
TW (1) | TW536816B (ja) |
WO (1) | WO2002099875A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100538810B1 (ko) | 2003-12-29 | 2005-12-23 | 주식회사 하이닉스반도체 | 반도체소자의 소자분리 방법 |
KR100618698B1 (ko) | 2004-06-21 | 2006-09-08 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
US20060157613A1 (en) * | 2005-01-19 | 2006-07-20 | Adamson Eric E | Supersonic aircraft with active lift distribution control for reducing sonic boom |
US7344954B2 (en) | 2006-01-03 | 2008-03-18 | United Microelectonics Corp. | Method of manufacturing a capacitor deep trench and of etching a deep trench opening |
JP2007184356A (ja) * | 2006-01-05 | 2007-07-19 | Oki Electric Ind Co Ltd | エッチング方法 |
KR100853485B1 (ko) * | 2007-03-19 | 2008-08-21 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
US8927352B2 (en) * | 2013-03-08 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Channel epitaxial regrowth flow (CRF) |
CN108831831A (zh) * | 2018-06-20 | 2018-11-16 | 上海华虹宏力半导体制造有限公司 | 改善漏电流的刻蚀方法和浅沟槽隔离结构的形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4729815A (en) * | 1986-07-21 | 1988-03-08 | Motorola, Inc. | Multiple step trench etching process |
JPS63240027A (ja) * | 1987-03-27 | 1988-10-05 | Fujitsu Ltd | ドライエツチング方法 |
JP2734915B2 (ja) * | 1992-11-18 | 1998-04-02 | 株式会社デンソー | 半導体のドライエッチング方法 |
US5576566A (en) * | 1995-04-13 | 1996-11-19 | International Business Machines Corporation | Semiconductor trench capacitor cell having a buried strap |
JP3351183B2 (ja) * | 1995-06-19 | 2002-11-25 | 株式会社デンソー | シリコン基板のドライエッチング方法及びトレンチ形成方法 |
JPH1022271A (ja) * | 1996-07-05 | 1998-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
US5843226A (en) * | 1996-07-16 | 1998-12-01 | Applied Materials, Inc. | Etch process for single crystal silicon |
US5998821A (en) * | 1997-05-21 | 1999-12-07 | Kabushiki Kaisha Toshiba | Dynamic ram structure having a trench capacitor |
DE19903597C2 (de) * | 1999-01-29 | 2001-09-27 | Infineon Technologies Ag | Herstellverfahren für einen Isolationsgraben unter Verwendung einer Hilfsschicht |
DE19910886B4 (de) * | 1999-03-11 | 2008-08-14 | Infineon Technologies Ag | Verfahren zur Herstellung einer flachen Grabenisolation für elektrisch aktive Bauelemente |
US6400458B1 (en) * | 1999-09-30 | 2002-06-04 | Lam Research Corporation | Interferometric method for endpointing plasma etch processes |
US6358359B1 (en) * | 1999-11-03 | 2002-03-19 | Agere Systems Guardian Corp. | Apparatus for detecting plasma etch endpoint in semiconductor fabrication and associated method |
US6221784B1 (en) * | 1999-11-29 | 2001-04-24 | Applied Materials Inc. | Method and apparatus for sequentially etching a wafer using anisotropic and isotropic etching |
JP3594864B2 (ja) * | 2000-01-25 | 2004-12-02 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
US6503813B1 (en) * | 2000-06-16 | 2003-01-07 | International Business Machines Corporation | Method and structure for forming a trench in a semiconductor substrate |
US6458671B1 (en) * | 2001-02-16 | 2002-10-01 | Applied Materials Inc. | Method of providing a shallow trench in a deep-trench device |
-
2001
- 2001-06-06 EP EP01113838A patent/EP1265278A1/en not_active Withdrawn
-
2002
- 2002-04-02 TW TW091106640A patent/TW536816B/zh not_active IP Right Cessation
- 2002-06-03 JP JP2003502883A patent/JP3905882B2/ja not_active Expired - Fee Related
- 2002-06-03 KR KR1020037015927A patent/KR100596248B1/ko not_active IP Right Cessation
- 2002-06-03 WO PCT/EP2002/006090 patent/WO2002099875A1/en active Application Filing
-
2003
- 2003-11-17 US US10/715,019 patent/US6855596B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004528730A (ja) | 2004-09-16 |
WO2002099875A1 (en) | 2002-12-12 |
US6855596B2 (en) | 2005-02-15 |
KR20040000509A (ko) | 2004-01-03 |
EP1265278A1 (en) | 2002-12-11 |
TW536816B (en) | 2003-06-11 |
US20040094777A1 (en) | 2004-05-20 |
KR100596248B1 (ko) | 2006-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3976703B2 (ja) | 半導体装置の製造方法 | |
JP4152276B2 (ja) | 低温原子層蒸着による窒化膜をエッチング阻止層として利用する半導体素子及びその製造方法 | |
US6284666B1 (en) | Method of reducing RIE lag for deep trench silicon etching | |
US6544838B2 (en) | Method of deep trench formation with improved profile control and surface area | |
KR102531315B1 (ko) | 자체 정렬된 이중 패터닝 | |
US20030057184A1 (en) | Method for pull back SiN to increase rounding effect in a shallow trench isolation process | |
KR20080013174A (ko) | 캐패시터의 스토리지노드 분리 방법 | |
US9209193B2 (en) | Method of manufacturing device | |
US20120015494A1 (en) | Method for fabricating bottom electrode of capacitors of dram | |
JP3905882B2 (ja) | 分離トレンチを有するトレンチキャパシタを製造する方法 | |
TWI278070B (en) | Semiconductor device having step gates and method for fabricating the same | |
JP3891087B2 (ja) | ポリシリコンエッチング方法 | |
KR100322894B1 (ko) | 산화 실리콘과 폴리실리콘을 동시에 에칭하기 위한 에칭 가스 조성물, 이를 이용한 에칭 방법 및 이를 이용한 반도체 메모리 소자의 제조방법 | |
JP2008103420A (ja) | 半導体装置の製造方法 | |
JP2006191053A (ja) | 半導体メモリ装置の製造方法 | |
US10438774B2 (en) | Etching method and plasma processing apparatus | |
US6984556B2 (en) | Method of forming an isolation layer and method of manufacturing a trench capacitor | |
US6730609B2 (en) | Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device | |
JP4360393B2 (ja) | ポリシリコンエッチング方法 | |
US6093601A (en) | Method of fabricating crown capacitor by using oxynitride mask | |
KR20090016815A (ko) | 울퉁불퉁한 표면의 원통형 스토리지전극을 갖는 캐패시터의제조 방법 | |
US7037778B2 (en) | Method for fabricating capacitor in semiconductor memory device | |
US6686234B1 (en) | Semiconductor device and method for fabricating the same | |
CN117936454A (zh) | 半导体结构的制作方法及半导体结构 | |
KR100875674B1 (ko) | 캐패시터 누설을 방지하는 반도체소자 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060817 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060822 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20061215 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070112 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |