JP3905824B2 - 単結晶窒化ガリウム局在基板及びその製造方法 - Google Patents

単結晶窒化ガリウム局在基板及びその製造方法 Download PDF

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Publication number
JP3905824B2
JP3905824B2 JP2002341046A JP2002341046A JP3905824B2 JP 3905824 B2 JP3905824 B2 JP 3905824B2 JP 2002341046 A JP2002341046 A JP 2002341046A JP 2002341046 A JP2002341046 A JP 2002341046A JP 3905824 B2 JP3905824 B2 JP 3905824B2
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JP
Japan
Prior art keywords
single crystal
silicon
gallium nitride
substrate
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002341046A
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English (en)
Japanese (ja)
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JP2004179242A5 (https=
JP2004179242A (ja
Inventor
勝俊 泉
基 中尾
義昭 大林
啓治 峯
誠作 平井
文彦 条邊
智之 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OSAKAPREFECTURAL GOVERNMENT
Hosiden Corp
Original Assignee
OSAKAPREFECTURAL GOVERNMENT
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OSAKAPREFECTURAL GOVERNMENT, Hosiden Corp filed Critical OSAKAPREFECTURAL GOVERNMENT
Priority to JP2002341046A priority Critical patent/JP3905824B2/ja
Priority to TW092130541A priority patent/TW200425764A/zh
Priority to US10/699,832 priority patent/US20040099871A1/en
Priority to KR1020030078594A priority patent/KR100794902B1/ko
Priority to EP03257408A priority patent/EP1422746A2/en
Priority to CNB200310119925XA priority patent/CN100401460C/zh
Publication of JP2004179242A publication Critical patent/JP2004179242A/ja
Priority to US11/055,985 priority patent/US7393763B2/en
Publication of JP2004179242A5 publication Critical patent/JP2004179242A5/ja
Application granted granted Critical
Publication of JP3905824B2 publication Critical patent/JP3905824B2/ja
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2002341046A 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法 Expired - Fee Related JP3905824B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002341046A JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法
TW092130541A TW200425764A (en) 2002-11-25 2003-10-31 Single crystal gallium nitride localized substrate and its manufacturing method
US10/699,832 US20040099871A1 (en) 2002-11-25 2003-11-04 Monocrystalline gallium nitride localized substrate and manufacturing method thereof
KR1020030078594A KR100794902B1 (ko) 2002-11-25 2003-11-07 단결정 질화갈륨 국재 기판 및 그 제조방법
EP03257408A EP1422746A2 (en) 2002-11-25 2003-11-24 Monocrystalline gallium nitride localized substrate and manufacturing method thereof
CNB200310119925XA CN100401460C (zh) 2002-11-25 2003-11-25 局部存在有单晶氮化镓的基底及其制备方法
US11/055,985 US7393763B2 (en) 2002-11-25 2005-02-14 Manufacturing method of monocrystalline gallium nitride localized substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002341046A JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004179242A JP2004179242A (ja) 2004-06-24
JP2004179242A5 JP2004179242A5 (https=) 2005-03-17
JP3905824B2 true JP3905824B2 (ja) 2007-04-18

Family

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Family Applications (1)

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JP2002341046A Expired - Fee Related JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法

Country Status (6)

Country Link
US (2) US20040099871A1 (https=)
EP (1) EP1422746A2 (https=)
JP (1) JP3905824B2 (https=)
KR (1) KR100794902B1 (https=)
CN (1) CN100401460C (https=)
TW (1) TW200425764A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090261346A1 (en) * 2008-04-16 2009-10-22 Ding-Yuan Chen Integrating CMOS and Optical Devices on a Same Chip
CN103031598B (zh) * 2012-08-16 2015-10-14 上海华虹宏力半导体制造有限公司 硅外延生长的工艺方法
US8946775B2 (en) 2012-08-22 2015-02-03 Industrial Technology Research Institute Nitride semiconductor structure
JP2014078590A (ja) * 2012-10-10 2014-05-01 Tokyo Electron Ltd 半導体素子の製造方法及び半導体素子
TWI491068B (zh) 2012-11-08 2015-07-01 財團法人工業技術研究院 氮化物半導體結構
CN104294354B (zh) * 2013-07-19 2016-10-19 上海华虹宏力半导体制造有限公司 一种GaN 外延工艺方法
CN104538520B (zh) * 2014-12-29 2017-05-24 杭州士兰微电子股份有限公司 Led衬底结构及其制作方法
US10319838B2 (en) 2015-10-07 2019-06-11 International Business Machines Corporation III-V fin generation by lateral growth on silicon sidewall
US20190097083A1 (en) * 2016-03-08 2019-03-28 Insiava (Pty) Ltd. Indirect band gap light emitting device
JP7015129B2 (ja) 2017-09-11 2022-02-02 株式会社ニューフレアテクノロジー 半導体装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243111B2 (ja) 1993-03-15 2002-01-07 株式会社東芝 化合物半導体素子
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
JP3179346B2 (ja) * 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
KR100450781B1 (ko) * 1997-08-20 2004-11-16 삼성전자주식회사 Gan단결정제조방법
KR19990062035A (ko) * 1997-12-31 1999-07-26 조장연 실리콘 기판을 이용한 갈륨기판 제조방법
JP2927768B1 (ja) 1998-03-26 1999-07-28 技術研究組合オングストロームテクノロジ研究機構 半導体装置およびその製造方法
JP4666295B2 (ja) * 1998-07-14 2011-04-06 富士通株式会社 半導体レーザ及び半導体装置の製造方法
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6580098B1 (en) * 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001044124A (ja) * 1999-07-28 2001-02-16 Sony Corp エピタキシャル層の形成方法
KR20010038505A (ko) * 1999-10-25 2001-05-15 남기석 ＳＯＩ 구조상에 ＧａＮ 단결정 제조 기술
JP2001168039A (ja) 1999-12-10 2001-06-22 New Japan Radio Co Ltd 半導体結晶粒又は薄膜の製造方法
US6423983B1 (en) * 2000-10-13 2002-07-23 North Carolina State University Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
JP4743989B2 (ja) 2000-12-15 2011-08-10 宣彦 澤木 半導体素子およびその製造方法ならびに半導体基板の製造方法
JP2002241198A (ja) * 2001-02-13 2002-08-28 Hitachi Cable Ltd ＧａＮ単結晶基板及びその製造方法

Also Published As

Publication number Publication date
US7393763B2 (en) 2008-07-01
KR20040045300A (ko) 2004-06-01
US20040099871A1 (en) 2004-05-27
KR100794902B1 (ko) 2008-01-14
CN100401460C (zh) 2008-07-09
US20050148108A1 (en) 2005-07-07
CN1508843A (zh) 2004-06-30
TW200425764A (en) 2004-11-16
EP1422746A2 (en) 2004-05-26
JP2004179242A (ja) 2004-06-24

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