US20040099871A1 - Monocrystalline gallium nitride localized substrate and manufacturing method thereof - Google Patents

Monocrystalline gallium nitride localized substrate and manufacturing method thereof Download PDF

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Publication number
US20040099871A1
US20040099871A1 US10/699,832 US69983203A US2004099871A1 US 20040099871 A1 US20040099871 A1 US 20040099871A1 US 69983203 A US69983203 A US 69983203A US 2004099871 A1 US2004099871 A1 US 2004099871A1
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Prior art keywords
gallium nitride
monocrystalline
silicon
substrate
monocrystalline gallium
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Abandoned
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US10/699,832
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English (en)
Inventor
Katsutoshi Izumi
Motoi Nakao
Yoshiaki Ohbayashi
Keiji Mine
Seisaku Hirai
Fumihiko Jobe
Tomoyuki Tanaka
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Osaka Municipal Government
Hosiden Corp
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Osaka Municipal Government
Hosiden Corp
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Assigned to HOSIDEN CORPORATION, OSAKA PREFECTURE reassignment HOSIDEN CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JOBE, FUMIHIKO, MINE, KEIJI, OHBAYASHI, YOSHIAKI, HIRAI, SEISAKU, TANAKA, TOMOYUKI, IZUMI, KATSUTOSHI, NAKAO, MOTOI
Publication of US20040099871A1 publication Critical patent/US20040099871A1/en
Priority to US11/055,985 priority Critical patent/US7393763B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Definitions

  • the present invention relates to a monocrystalline gallium nitride localized substrate such that an area in which monocrystalline gallium nitride is grown is locally present on a monocrystalline silicon substrate, and to a manufacturing method thereof.
  • Gallium nitride has been generally used as materials for blue light-emitting elements represented by LED (light-emitting diode) and laser diode.
  • LED light-emitting diode
  • sapphire has been mainly used as substrates, and gallium nitride has been grown thereon by the MOCVD method.
  • the present invention has been created in view of the above-mentioned circumstances, and is intended for providing a monocrystalline gallium nitride localized substrate and a manufacturing method thereof, which is suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.
  • a monocrystalline gallium nitride localized substrate according to the present invention locally has an area, in which monocrystalline gallium nitride is grown, on a monocrystalline silicon substrate.
  • a manufacturing method of a monocrystalline gallium nitride localized substrate comprises the step of forming silicon carbide on a monocrystalline silicon substrate and the step of locally forming monocrystalline gallium nitride on the above-mentioned silicon carbide, and employs silicon nitride or silicon oxide as a mask in forming the above-mentioned monocrystalline gallium nitride.
  • FIG. 1 is a schematic view showing the steps of a manufacturing method of a monocrystalline gallium nitride localized substrate according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic view showing the steps of a manufacturing method of a monocrystalline gallium nitride localized substrate according to Embodiment 2 of the present invention.
  • FIG. 1 is a schematic view showing the steps of a manufacturing method of a monocrystalline gallium nitride localized substrate according to Embodiment 1 of the present invention
  • FIG. 2 is a schematic view showing the steps of a manufacturing method of a monocrystalline gallium nitride localized substrate according to Embodiment 2 of the present invention.
  • a monocrystalline gallium nitride localized substrate according to Embodiment 1 of the present invention is manufactured in the following manner.
  • silicon nitride (Si 3 N 4 ) 200 as a thin film is made to grow by the CVD method on the whole surface of a silicon substrate 100 having a face orientation (111) for film formation (refer to FIG. 1(A)).
  • This silicon nitride 200 functions as a mask in growing gallium nitride 400 . That is, the gallium nitride 400 does not grow (does not remain resultingly) in parts in which the silicon nitride 200 is formed.
  • a photoresist 500 is applied on the silicon nitride 200 to superpose a photomask 600 thereon in areas in which it is undesirable to grow the gallium nitride 400 , and the mask pattern is transferred by the photolithography technique (refer to FIG. 1(B)).
  • the silicon nitride 200 in parts of no photoresist 500 is removed by etching with the use of the developed photoresist 500 as a mask (refer to FIG. 1(C)).
  • the developed photoresist 500 is peeled off so as to expose a part 210 of no silicon nitride 200 and an island-shaped silicon nitride island 220 (refer to FIG. 1(D)). It should be noted that the surface of the silicon substrate 100 as an initial material is exposed in the part 210 of no silicon nitride 200 .
  • the silicon in the part 210 of no silicon nitride 200 is modified into cubic monocrystalline silicon carbide 300 (refer to FIG. 1(E)). Then, the face orientation of the modified monocrystalline silicon carbide 300 is (111), the same as the silicon substrate 100 as an initial material.
  • the modification of the silicon into the monocrystalline silicon carbide 300 is performed by placing the silicon substrate 100 inside a film-forming chamber and heating the atmosphere temperature of the inside of the film-forming chamber to a temperature of 1200 to 1405° C. while streaming hydrogen gas and hydrocarbon-based gas at a rate of 1 to 5 volume % with respect to the hydrogen gas as carrier gas. Also, the inside of the film-forming chamber is set under atmospheric pressure.
  • the hydrocarbon-based gas involves propane gas, methane gas, ethylene gas, butane gas and the like, and propane gas will be the most excellent in a high content of carbon atom and the lowest cost at the present time as compared with methane gas and ethylene gas.
  • the gallium nitride 400 is made to epitaxially grow by the MOCVD method on the whole surface of the silicon substrate 100 (refer to FIG. 1(F)). Then, the face orientation of the growing gallium nitride 400 is (0001). There exists the difference in crystallinity between gallium nitride 410 grown on the above-mentioned monocrystalline silicon carbide 300 and gallium nitride 420 grown on the silicon nitride island 220 . The gallium nitride 410 grown on the monocrystalline silicon carbide 300 has more favorable crystallinity than the other.
  • the gallium nitride 420 grown on the silicon nitride island 220 becomes polycrystalline, so as to include a great number of crystal defects and have a chemically unstable structure.
  • the above-mentioned silicon nitride island 220 is provided in areas in which it is undesirable to grow the gallium nitride 400 . It is, therefore, required to remove the gallium nitride 420 grown on this silicon nitride island 220 .
  • this gallium nitride 420 is performed in the following manner.
  • potassium hydroxide is used as etching liquid to soak the whole sample in this etching liquid.
  • This etching liquid is capable of dissolving the gallium nitride 410 grown on the monocrystalline silicon carbide 300 as well; however, the gallium nitride 420 grown on the silicon nitride island 220 is chemically unstable, so that the etching rate thereof is higher than that of the gallium nitride 410 and consequently the gallium nitride 420 grown on the silicon nitride island 220 is selectively etched.
  • the unnecessary gallium nitride 420 can be removed with a favorable selectivity (refer to FIG. 1(G)).
  • the silicon nitride island 220 remaining on the surface also after removing the unnecessary gallium nitride 420 is etched by heated phosphoric acid to obtain a monocrystalline gallium nitride localized substrate such that the monocrystalline gallium nitride 410 is locally present (refer to FIG. 1(H)).
  • This manufacturing method is as follows.
  • the surface of a silicon substrate 100 having a face orientation (111) for film formation is thermally oxidized to form silicon oxide (SiO 2 ) 700 as a thin film (refer to FIG. 2(A)).
  • This silicon oxide 700 functions as a mask in growing gallium nitride 400 . That is, the gallium nitride 400 does not grow (does not remain resultingly) in parts in which the silicon oxide 700 is formed.
  • a photoresist 500 is applied on the silicon oxide 700 to superpose a photomask 600 thereon in parts in which it is undesirable to grow the gallium nitride 400 , and the mask pattern is transferred by the photolithography technique (refer to FIG. 2(B)).
  • the silicon oxide 700 in parts of no photoresist 500 is removed by etching with the use of the developed photoresist 500 as a mask (refer to FIG. 2(C)).
  • the developed photoresist 500 is peeled off so as to expose a part 710 of no silicon oxide 700 and an island-shaped silicon oxide island 720 (refer to FIG. 2(D)). It should be noted that the surface of the silicon substrate 100 as an initial material is exposed in the part 710 of no silicon oxide 700 .
  • the silicon of the silicon substrate 100 exposed in the part of no silicon oxide 700 is modified into cubic monocrystalline silicon oxide 300 by the same manner as described in Embodiment 1 (refer to FIG. 2(E)).
  • the modification of the silicon into the monocrystalline silicon carbide 300 is performed by the same manner as described above, namely, by placing the silicon substrate 100 inside a film-forming chamber and heating the atmosphere temperature of the inside of the film-forming chamber to a temperature of 1200 to 1405° C. while streaming hydrogen gas and hydrocarbon-based gas such as propane gas, methane gas, ethylene gas and butane gas at a rate of 1 to 5 volume % with respect to the hydrogen gas as carrier gas.
  • the inside of the film-forming chamber is set under atmospheric pressure.
  • the face orientation of the modified monocrystalline silicon carbide 300 is also (111), the same as the initial silicon substrate 100 .
  • the gallium nitride 400 is made to epitaxially grow by the MOCVD method on the whole silicon substrate 100 (refer to FIG. 2(F)). Then, the face orientation of the growing gallium nitride 400 is (0001). There exists the difference in crystallinity between gallium nitride 410 grown on the above-mentioned monocrystalline silicon carbide 300 and gallium nitride 420 grown on the silicon oxide island 720 . The gallium nitride 410 grown on the monocrystalline silicon carbide 300 has more favorable crystallinity than the other.
  • the gallium nitride 420 grown on the silicon oxide island 720 includes a great number of crystal defects, so as to have a chemically unstable structure.
  • the silicon oxide island 720 is provided in parts in which it is undesirable to grow the gallium nitride 400 , so that it is required to remove the gallium nitride 420 grown on the silicon oxide island 720 .
  • this gallium nitride 420 is performed in the following manner.
  • potassium hydroxide is used as etching liquid to soak the whole sample in this etching liquid.
  • This etching liquid is capable of dissolving the gallium nitride 410 grown on the monocrystalline silicon carbide 300 as well; however, the gallium nitride 420 grown on the silicon oxide island 720 is chemically unstable, so that the etching rate thereof is higher than that of the gallium nitride 410 and consequently the gallium nitride 420 grown on the silicon oxide island 720 is selectively etched.
  • the unnecessary gallium nitride 420 can be removed with a favorable selectivity.
  • the silicon oxide island 720 remaining on the surface is etched by heated hydrofluoric acid-based etching liquid (refer to FIG. 2(G)) to obtain a monocrystalline gallium nitride localized substrate such that the monocrystalline gallium nitride 410 is locally present (refer to FIG. 2(H)).
  • the silicon substrate 100 is used as an initial material in the above-mentioned Embodiments 1 and 2, and a monocrystalline gallium nitride localized substrate which is equivalent thereto can be manufactured also by using an SOI substrate instead through similar steps.
  • a monocrystalline gallium nitride localized substrate according to the present invention locally has an area, in which monocrystalline gallium nitride is grown, on a monocrystalline silicon substrate.
  • Such a monocrystalline gallium nitride localized substrate does not cause the problem of signal delay by forming optical devices such as LED and laser diode and electronic devices in parts thereon in which monocrystalline gallium nitride is formed and parts thereon in which monocrystalline gallium nitride is not formed respectively, as compared with products by a conventional method of sticking electronic devices and optical devices together. Also, the monocrystalline gallium nitride localized substrate can solve the problem of downsizing optical devices caused in a method of connecting electronic devices by optical devices.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
US10/699,832 2002-11-25 2003-11-04 Monocrystalline gallium nitride localized substrate and manufacturing method thereof Abandoned US20040099871A1 (en)

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JP2002341046A JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779468B2 (en) 2012-11-08 2014-07-15 Industrial Technology Research Institute Nitride semiconductor structure
US8946775B2 (en) 2012-08-22 2015-02-03 Industrial Technology Research Institute Nitride semiconductor structure
WO2017153927A1 (en) * 2016-03-08 2017-09-14 Insiava (Pty) Ltd. Indirect band gap light emitting device
US10068994B2 (en) 2015-10-07 2018-09-04 International Business Machines Corporation III-V fin generation by lateral growth on silicon sidewall
US10770481B2 (en) 2017-09-11 2020-09-08 Nuflare Technology, Inc. Semiconductor device and method for manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090261346A1 (en) * 2008-04-16 2009-10-22 Ding-Yuan Chen Integrating CMOS and Optical Devices on a Same Chip
CN103031598B (zh) * 2012-08-16 2015-10-14 上海华虹宏力半导体制造有限公司 硅外延生长的工艺方法
JP2014078590A (ja) * 2012-10-10 2014-05-01 Tokyo Electron Ltd 半導体素子の製造方法及び半導体素子
CN104294354B (zh) * 2013-07-19 2016-10-19 上海华虹宏力半导体制造有限公司 一种GaN 外延工艺方法
CN104538520B (zh) * 2014-12-29 2017-05-24 杭州士兰微电子股份有限公司 Led衬底结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6423983B1 (en) * 2000-10-13 2002-07-23 North Carolina State University Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
US6835966B2 (en) * 1999-07-27 2004-12-28 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243111B2 (ja) 1993-03-15 2002-01-07 株式会社東芝 化合物半導体素子
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
JP3179346B2 (ja) * 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
KR100450781B1 (ko) * 1997-08-20 2004-11-16 삼성전자주식회사 Gan단결정제조방법
KR19990062035A (ko) * 1997-12-31 1999-07-26 조장연 실리콘 기판을 이용한 갈륨기판 제조방법
JP2927768B1 (ja) 1998-03-26 1999-07-28 技術研究組合オングストロームテクノロジ研究機構 半導体装置およびその製造方法
JP4666295B2 (ja) * 1998-07-14 2011-04-06 富士通株式会社 半導体レーザ及び半導体装置の製造方法
JP2001044124A (ja) * 1999-07-28 2001-02-16 Sony Corp エピタキシャル層の形成方法
KR20010038505A (ko) * 1999-10-25 2001-05-15 남기석 ＳＯＩ 구조상에 ＧａＮ 단결정 제조 기술
JP2001168039A (ja) 1999-12-10 2001-06-22 New Japan Radio Co Ltd 半導体結晶粒又は薄膜の製造方法
JP4743989B2 (ja) 2000-12-15 2011-08-10 宣彦 澤木 半導体素子およびその製造方法ならびに半導体基板の製造方法
JP2002241198A (ja) * 2001-02-13 2002-08-28 Hitachi Cable Ltd ＧａＮ単結晶基板及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6835966B2 (en) * 1999-07-27 2004-12-28 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6423983B1 (en) * 2000-10-13 2002-07-23 North Carolina State University Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8946775B2 (en) 2012-08-22 2015-02-03 Industrial Technology Research Institute Nitride semiconductor structure
US8779468B2 (en) 2012-11-08 2014-07-15 Industrial Technology Research Institute Nitride semiconductor structure
US10068994B2 (en) 2015-10-07 2018-09-04 International Business Machines Corporation III-V fin generation by lateral growth on silicon sidewall
US10096697B2 (en) 2015-10-07 2018-10-09 International Business Machines Corporation III-V FIN generation by lateral growth on silicon sidewall
US10319838B2 (en) 2015-10-07 2019-06-11 International Business Machines Corporation III-V fin generation by lateral growth on silicon sidewall
WO2017153927A1 (en) * 2016-03-08 2017-09-14 Insiava (Pty) Ltd. Indirect band gap light emitting device
CN110140209A (zh) * 2016-03-08 2019-08-16 因西亚瓦(控股)有限公司 间接带隙发光器件
US10770481B2 (en) 2017-09-11 2020-09-08 Nuflare Technology, Inc. Semiconductor device and method for manufacturing the same

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US7393763B2 (en) 2008-07-01
JP3905824B2 (ja) 2007-04-18
KR20040045300A (ko) 2004-06-01
KR100794902B1 (ko) 2008-01-14
CN100401460C (zh) 2008-07-09
US20050148108A1 (en) 2005-07-07
CN1508843A (zh) 2004-06-30
TW200425764A (en) 2004-11-16
EP1422746A2 (en) 2004-05-26
JP2004179242A (ja) 2004-06-24

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