KR100794902B1 - 단결정 질화갈륨 국재 기판 및 그 제조방법 - Google Patents

단결정 질화갈륨 국재 기판 및 그 제조방법

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Publication number
KR100794902B1
KR100794902B1 KR1020030078594A KR20030078594A KR100794902B1 KR 100794902 B1 KR100794902 B1 KR 100794902B1 KR 1020030078594 A KR1020030078594 A KR 1020030078594A KR 20030078594 A KR20030078594 A KR 20030078594A KR 100794902 B1 KR100794902 B1 KR 100794902B1
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KR
South Korea
Prior art keywords
single crystal
gallium nitride
silicon
substrate
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030078594A
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English (en)
Korean (ko)
Other versions
KR20040045300A (ko
Inventor
카쓰토시 이즈미
모토이 나카오
요시아키 오오바야시
케이지 미네
세이사쿠 히라이
후미히코 죠베
토모유키 타나카
Original Assignee
호시덴 가부시기가이샤
오오사카후
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Publication date
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Publication of KR20040045300A publication Critical patent/KR20040045300A/ko
Application granted granted Critical
Publication of KR100794902B1 publication Critical patent/KR100794902B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
KR1020030078594A 2002-11-25 2003-11-07 단결정 질화갈륨 국재 기판 및 그 제조방법 Expired - Fee Related KR100794902B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00341046 2002-11-25
JP2002341046A JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法

Publications (2)

Publication Number Publication Date
KR20040045300A KR20040045300A (ko) 2004-06-01
KR100794902B1 true KR100794902B1 (ko) 2008-01-14

Family

ID=32212163

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030078594A Expired - Fee Related KR100794902B1 (ko) 2002-11-25 2003-11-07 단결정 질화갈륨 국재 기판 및 그 제조방법

Country Status (6)

Country Link
US (2) US20040099871A1 (https=)
EP (1) EP1422746A2 (https=)
JP (1) JP3905824B2 (https=)
KR (1) KR100794902B1 (https=)
CN (1) CN100401460C (https=)
TW (1) TW200425764A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090261346A1 (en) * 2008-04-16 2009-10-22 Ding-Yuan Chen Integrating CMOS and Optical Devices on a Same Chip
CN103031598B (zh) * 2012-08-16 2015-10-14 上海华虹宏力半导体制造有限公司 硅外延生长的工艺方法
US8946775B2 (en) 2012-08-22 2015-02-03 Industrial Technology Research Institute Nitride semiconductor structure
JP2014078590A (ja) * 2012-10-10 2014-05-01 Tokyo Electron Ltd 半導体素子の製造方法及び半導体素子
TWI491068B (zh) 2012-11-08 2015-07-01 財團法人工業技術研究院 氮化物半導體結構
CN104294354B (zh) * 2013-07-19 2016-10-19 上海华虹宏力半导体制造有限公司 一种GaN 外延工艺方法
CN104538520B (zh) * 2014-12-29 2017-05-24 杭州士兰微电子股份有限公司 Led衬底结构及其制作方法
US10319838B2 (en) 2015-10-07 2019-06-11 International Business Machines Corporation III-V fin generation by lateral growth on silicon sidewall
US20190097083A1 (en) * 2016-03-08 2019-03-28 Insiava (Pty) Ltd. Indirect band gap light emitting device
JP7015129B2 (ja) 2017-09-11 2022-02-02 株式会社ニューフレアテクノロジー 半導体装置及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016925A (ko) * 1997-08-20 1999-03-15 윤종용 ＧａＮ 단결정 제조 방법
KR19990062035A (ko) * 1997-12-31 1999-07-26 조장연 실리콘 기판을 이용한 갈륨기판 제조방법
KR20010038505A (ko) * 1999-10-25 2001-05-15 남기석 ＳＯＩ 구조상에 ＧａＮ 단결정 제조 기술
JP2002241198A (ja) * 2001-02-13 2002-08-28 Hitachi Cable Ltd ＧａＮ単結晶基板及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243111B2 (ja) 1993-03-15 2002-01-07 株式会社東芝 化合物半導体素子
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
JP3179346B2 (ja) * 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
JP2927768B1 (ja) 1998-03-26 1999-07-28 技術研究組合オングストロームテクノロジ研究機構 半導体装置およびその製造方法
JP4666295B2 (ja) * 1998-07-14 2011-04-06 富士通株式会社 半導体レーザ及び半導体装置の製造方法
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6580098B1 (en) * 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001044124A (ja) * 1999-07-28 2001-02-16 Sony Corp エピタキシャル層の形成方法
JP2001168039A (ja) 1999-12-10 2001-06-22 New Japan Radio Co Ltd 半導体結晶粒又は薄膜の製造方法
US6423983B1 (en) * 2000-10-13 2002-07-23 North Carolina State University Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
JP4743989B2 (ja) 2000-12-15 2011-08-10 宣彦 澤木 半導体素子およびその製造方法ならびに半導体基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016925A (ko) * 1997-08-20 1999-03-15 윤종용 ＧａＮ 단결정 제조 방법
KR19990062035A (ko) * 1997-12-31 1999-07-26 조장연 실리콘 기판을 이용한 갈륨기판 제조방법
KR20010038505A (ko) * 1999-10-25 2001-05-15 남기석 ＳＯＩ 구조상에 ＧａＮ 단결정 제조 기술
JP2002241198A (ja) * 2001-02-13 2002-08-28 Hitachi Cable Ltd ＧａＮ単結晶基板及びその製造方法

Also Published As

Publication number Publication date
US7393763B2 (en) 2008-07-01
JP3905824B2 (ja) 2007-04-18
KR20040045300A (ko) 2004-06-01
US20040099871A1 (en) 2004-05-27
CN100401460C (zh) 2008-07-09
US20050148108A1 (en) 2005-07-07
CN1508843A (zh) 2004-06-30
TW200425764A (en) 2004-11-16
EP1422746A2 (en) 2004-05-26
JP2004179242A (ja) 2004-06-24

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