JP2004179242A5 - - Google Patents

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Publication number
JP2004179242A5
JP2004179242A5 JP2002341046A JP2002341046A JP2004179242A5 JP 2004179242 A5 JP2004179242 A5 JP 2004179242A5 JP 2002341046 A JP2002341046 A JP 2002341046A JP 2002341046 A JP2002341046 A JP 2002341046A JP 2004179242 A5 JP2004179242 A5 JP 2004179242A5
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JP
Japan
Prior art keywords
gas
hydrocarbon
carried out
film formation
formation chamber
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Application number
JP2002341046A
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English (en)
Japanese (ja)
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JP3905824B2 (ja
JP2004179242A (ja
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Priority claimed from JP2002341046A external-priority patent/JP3905824B2/ja
Priority to JP2002341046A priority Critical patent/JP3905824B2/ja
Priority to TW092130541A priority patent/TW200425764A/zh
Priority to US10/699,832 priority patent/US20040099871A1/en
Priority to KR1020030078594A priority patent/KR100794902B1/ko
Priority to EP03257408A priority patent/EP1422746A2/en
Priority to CNB200310119925XA priority patent/CN100401460C/zh
Publication of JP2004179242A publication Critical patent/JP2004179242A/ja
Priority to US11/055,985 priority patent/US7393763B2/en
Publication of JP2004179242A5 publication Critical patent/JP2004179242A5/ja
Publication of JP3905824B2 publication Critical patent/JP3905824B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002341046A 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法 Expired - Fee Related JP3905824B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002341046A JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法
TW092130541A TW200425764A (en) 2002-11-25 2003-10-31 Single crystal gallium nitride localized substrate and its manufacturing method
US10/699,832 US20040099871A1 (en) 2002-11-25 2003-11-04 Monocrystalline gallium nitride localized substrate and manufacturing method thereof
KR1020030078594A KR100794902B1 (ko) 2002-11-25 2003-11-07 단결정 질화갈륨 국재 기판 및 그 제조방법
EP03257408A EP1422746A2 (en) 2002-11-25 2003-11-24 Monocrystalline gallium nitride localized substrate and manufacturing method thereof
CNB200310119925XA CN100401460C (zh) 2002-11-25 2003-11-25 局部存在有单晶氮化镓的基底及其制备方法
US11/055,985 US7393763B2 (en) 2002-11-25 2005-02-14 Manufacturing method of monocrystalline gallium nitride localized substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002341046A JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004179242A JP2004179242A (ja) 2004-06-24
JP2004179242A5 true JP2004179242A5 (https=) 2005-03-17
JP3905824B2 JP3905824B2 (ja) 2007-04-18

Family

ID=32212163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002341046A Expired - Fee Related JP3905824B2 (ja) 2002-11-25 2002-11-25 単結晶窒化ガリウム局在基板及びその製造方法

Country Status (6)

Country Link
US (2) US20040099871A1 (https=)
EP (1) EP1422746A2 (https=)
JP (1) JP3905824B2 (https=)
KR (1) KR100794902B1 (https=)
CN (1) CN100401460C (https=)
TW (1) TW200425764A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090261346A1 (en) * 2008-04-16 2009-10-22 Ding-Yuan Chen Integrating CMOS and Optical Devices on a Same Chip
CN103031598B (zh) * 2012-08-16 2015-10-14 上海华虹宏力半导体制造有限公司 硅外延生长的工艺方法
US8946775B2 (en) 2012-08-22 2015-02-03 Industrial Technology Research Institute Nitride semiconductor structure
JP2014078590A (ja) * 2012-10-10 2014-05-01 Tokyo Electron Ltd 半導体素子の製造方法及び半導体素子
TWI491068B (zh) 2012-11-08 2015-07-01 財團法人工業技術研究院 氮化物半導體結構
CN104294354B (zh) * 2013-07-19 2016-10-19 上海华虹宏力半导体制造有限公司 一种GaN 外延工艺方法
CN104538520B (zh) * 2014-12-29 2017-05-24 杭州士兰微电子股份有限公司 Led衬底结构及其制作方法
US10319838B2 (en) 2015-10-07 2019-06-11 International Business Machines Corporation III-V fin generation by lateral growth on silicon sidewall
US20190097083A1 (en) * 2016-03-08 2019-03-28 Insiava (Pty) Ltd. Indirect band gap light emitting device
JP7015129B2 (ja) 2017-09-11 2022-02-02 株式会社ニューフレアテクノロジー 半導体装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243111B2 (ja) 1993-03-15 2002-01-07 株式会社東芝 化合物半導体素子
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
JP3179346B2 (ja) * 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
KR100450781B1 (ko) * 1997-08-20 2004-11-16 삼성전자주식회사 Gan단결정제조방법
KR19990062035A (ko) * 1997-12-31 1999-07-26 조장연 실리콘 기판을 이용한 갈륨기판 제조방법
JP2927768B1 (ja) 1998-03-26 1999-07-28 技術研究組合オングストロームテクノロジ研究機構 半導体装置およびその製造方法
JP4666295B2 (ja) * 1998-07-14 2011-04-06 富士通株式会社 半導体レーザ及び半導体装置の製造方法
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6580098B1 (en) * 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001044124A (ja) * 1999-07-28 2001-02-16 Sony Corp エピタキシャル層の形成方法
KR20010038505A (ko) * 1999-10-25 2001-05-15 남기석 ＳＯＩ 구조상에 ＧａＮ 단결정 제조 기술
JP2001168039A (ja) 1999-12-10 2001-06-22 New Japan Radio Co Ltd 半導体結晶粒又は薄膜の製造方法
US6423983B1 (en) * 2000-10-13 2002-07-23 North Carolina State University Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
JP4743989B2 (ja) 2000-12-15 2011-08-10 宣彦 澤木 半導体素子およびその製造方法ならびに半導体基板の製造方法
JP2002241198A (ja) * 2001-02-13 2002-08-28 Hitachi Cable Ltd ＧａＮ単結晶基板及びその製造方法

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