JP3903988B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP3903988B2
JP3903988B2 JP2004006964A JP2004006964A JP3903988B2 JP 3903988 B2 JP3903988 B2 JP 3903988B2 JP 2004006964 A JP2004006964 A JP 2004006964A JP 2004006964 A JP2004006964 A JP 2004006964A JP 3903988 B2 JP3903988 B2 JP 3903988B2
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Japan
Prior art keywords
layer
nitride semiconductor
type
semiconductor device
gan
Prior art date
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Expired - Fee Related
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JP2004006964A
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English (en)
Japanese (ja)
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JP2004112002A (ja
JP2004112002A5 (enExample
Inventor
芳克 福田
陽 藤岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2004006964A priority Critical patent/JP3903988B2/ja
Publication of JP2004112002A publication Critical patent/JP2004112002A/ja
Publication of JP2004112002A5 publication Critical patent/JP2004112002A5/ja
Application granted granted Critical
Publication of JP3903988B2 publication Critical patent/JP3903988B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2004006964A 2001-07-04 2004-01-14 窒化物半導体素子 Expired - Fee Related JP3903988B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004006964A JP3903988B2 (ja) 2001-07-04 2004-01-14 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001203373 2001-07-04
JP2004006964A JP3903988B2 (ja) 2001-07-04 2004-01-14 窒化物半導体素子

Related Parent Applications (1)

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JP2002194542A Division JP3543809B2 (ja) 2001-07-04 2002-07-03 窒化物半導体素子

Publications (3)

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JP2004112002A JP2004112002A (ja) 2004-04-08
JP2004112002A5 JP2004112002A5 (enExample) 2006-07-06
JP3903988B2 true JP3903988B2 (ja) 2007-04-11

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ID=32300127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004006964A Expired - Fee Related JP3903988B2 (ja) 2001-07-04 2004-01-14 窒化物半導体素子

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JP (1) JP3903988B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3839799B2 (ja) * 2003-08-06 2006-11-01 ローム株式会社 半導体発光素子
KR100618288B1 (ko) 2005-03-21 2006-08-31 주식회사 이츠웰 터널링 층위에 제1 오믹 전극을 형성한 질화물 반도체 발광다이오드
US7462884B2 (en) 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
JP2009016467A (ja) 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置
JP4640427B2 (ja) * 2008-03-14 2011-03-02 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の製造方法、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
KR102187480B1 (ko) * 2014-01-21 2020-12-08 엘지이노텍 주식회사 발광 소자 및 발광소자 제조방법

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JP2004112002A (ja) 2004-04-08

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