KR100638729B1 - 3족 질화물 발광 소자 - Google Patents
3족 질화물 발광 소자 Download PDFInfo
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- KR100638729B1 KR100638729B1 KR1020050026736A KR20050026736A KR100638729B1 KR 100638729 B1 KR100638729 B1 KR 100638729B1 KR 1020050026736 A KR1020050026736 A KR 1020050026736A KR 20050026736 A KR20050026736 A KR 20050026736A KR 100638729 B1 KR100638729 B1 KR 100638729B1
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- layer
- light emitting
- emitting device
- group iii
- iii nitride
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- 238000005253 cladding Methods 0.000 claims abstract description 60
- 150000004767 nitrides Chemical class 0.000 claims abstract description 49
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000003892 spreading Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (16)
- 기판 상에 순차 적층된 하부 n형 클래드층, 전류 확산층 및 상부 n형 클래드층; 및상기 상부 n형 클래드층 상에 순차 적층된 활성층 및 p형 클래드층을 포함하되,상기 전류 확산층은 SiC층을 포함하는 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 SiC층은 언도프 SiC층인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 SiC층은 n-도프 SiC층인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제3항에 있어서,상기 SiC층에 첨가되는 도펀트는 N, Ti, Cr 및 P 중 하나 이상인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 전류 확산층은,상기 SiC층의 위와 아래에 각각 형성되고 상기 하부 n형 클래드층의 전자농도보다 더 높은 전자농도를 갖는 고농도 n-도프 AlxGayIn(1-x-y)N(0≤x≤1, 0≤y≤1, 0≤x+y≤1)층들을 더 포함하는 것을 특징으로 하는 3족 질화물 발광 소자.
- 제5항에 있어서,상기 전류 확산층은, 상기 SiC층 위에 형성된 상기 고농도 n-도프 AlxGayIn(1-x-y)N층 위에 하나 이상의 SiC층을 더 포함하는 것을 특징으로 하는 3족 질화물 발광 소자.
- 제5항에 있어서,상기 전류 확산층은, 상기 고농도 n-도프 AlxGayIn(1-x-y)N층/상기 SiC층이 다수회 반복 적층되어 형성되는 적층 구조물을 포함하는 것을 특징으로 하는 3족 질화물 발광 소자.
- 제5항에 있어서,상기 고농도 n-도프 AlxGayIn(1-x-y)N층의 전자 농도는 1×1021 cm-3이하인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 하부 n형 클래드층 전자 농도는 1×1018 내지 5×1018 cm-3 인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제5항에 있어서,상기 SiC층 위에 형성된 고농도 n-도프 AlxGayIn(1-x-y)N층의 조성과 상기 SiC층 아래에 형성된 고농도 n-도프 AlxGayIn(1-x-y)N층의 조성은, 서로 같은 것을 특징으로 하는 3족 질화물 발광 소자.
- 제5항에 있어서,상기 SiC층 위에 형성된 고농도 n-도프 AlxGayIn(1-x-y)N층의 조성과 상기 SiC층 아래에 형성된 고농도 n-도프 AlxGayIn(1-x-y)N층의 조성은, 서로 다른 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 상부 n형 클래드층은,상기 활성층 바로 아래에 형성되고 상기 하부 n형 클래드층의 전자 농도보다 더 낮은 전자 농도를 갖는 저농도 n-도프 AlxGayIn(1-x-y)N층을 포함하는 것을 특징으로 하는 3족 질화물 발광 소자.
- 제12항에 있어서,상기 저농도 n-도프 AlxGayIn(1-x-y)N층의 전자 농도는 1×1016 cm-3 이상인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제12항에 있어서,상기 저농도 n-도프 AlxGayIn(1-x-y)N층의 전자 농도는 1×1016 cm-3 내지 1×1018 cm-3 인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 3족 질화물 발광 소자는 발광 다이오드인 것을 특징으로 하는 3족 질화물 발광 소자.
- 제1항에 있어서,상기 3족 질화물 발광 소자는 레이저 다이오드인 것을 특징으로 하는 3족 질화물 발광 소자.
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KR1020050026736A KR100638729B1 (ko) | 2005-03-30 | 2005-03-30 | 3족 질화물 발광 소자 |
US11/313,967 US7301173B2 (en) | 2005-03-30 | 2005-12-22 | Group III-nitride light emitting device |
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KR1020050026736A KR100638729B1 (ko) | 2005-03-30 | 2005-03-30 | 3족 질화물 발광 소자 |
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KR20060104510A KR20060104510A (ko) | 2006-10-09 |
KR100638729B1 true KR100638729B1 (ko) | 2006-10-30 |
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Families Citing this family (6)
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US8044430B2 (en) * | 2006-01-18 | 2011-10-25 | Panasonic Corporation | Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration |
KR100931509B1 (ko) * | 2006-03-06 | 2009-12-11 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100903103B1 (ko) * | 2007-12-05 | 2009-06-16 | 우리엘에스티 주식회사 | 화합물 반도체를 이용한 발광소자 |
KR101583276B1 (ko) * | 2009-12-29 | 2016-01-19 | 서울바이오시스 주식회사 | 전류 분산을 위한 다층 구조체를 갖는 발광 다이오드 |
KR20130042784A (ko) * | 2011-10-19 | 2013-04-29 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
KR101961798B1 (ko) * | 2011-12-27 | 2019-03-25 | 엘지이노텍 주식회사 | 발광 소자 |
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JP3304787B2 (ja) | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
TW492202B (en) | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
US6720570B2 (en) * | 2002-04-17 | 2004-04-13 | Tekcore Co., Ltd. | Gallium nitride-based semiconductor light emitting device |
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- 2005-03-30 KR KR1020050026736A patent/KR100638729B1/ko active IP Right Grant
- 2005-12-22 US US11/313,967 patent/US7301173B2/en active Active
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US7301173B2 (en) | 2007-11-27 |
US20060219999A1 (en) | 2006-10-05 |
KR20060104510A (ko) | 2006-10-09 |
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