JP2004112002A5 - - Google Patents

Download PDF

Info

Publication number
JP2004112002A5
JP2004112002A5 JP2004006964A JP2004006964A JP2004112002A5 JP 2004112002 A5 JP2004112002 A5 JP 2004112002A5 JP 2004006964 A JP2004006964 A JP 2004006964A JP 2004006964 A JP2004006964 A JP 2004006964A JP 2004112002 A5 JP2004112002 A5 JP 2004112002A5
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
type
semiconductor device
superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004006964A
Other languages
English (en)
Japanese (ja)
Other versions
JP3903988B2 (ja
JP2004112002A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004006964A priority Critical patent/JP3903988B2/ja
Priority claimed from JP2004006964A external-priority patent/JP3903988B2/ja
Publication of JP2004112002A publication Critical patent/JP2004112002A/ja
Publication of JP2004112002A5 publication Critical patent/JP2004112002A5/ja
Application granted granted Critical
Publication of JP3903988B2 publication Critical patent/JP3903988B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004006964A 2001-07-04 2004-01-14 窒化物半導体素子 Expired - Fee Related JP3903988B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004006964A JP3903988B2 (ja) 2001-07-04 2004-01-14 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001203373 2001-07-04
JP2004006964A JP3903988B2 (ja) 2001-07-04 2004-01-14 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002194542A Division JP3543809B2 (ja) 2001-07-04 2002-07-03 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2004112002A JP2004112002A (ja) 2004-04-08
JP2004112002A5 true JP2004112002A5 (enExample) 2006-07-06
JP3903988B2 JP3903988B2 (ja) 2007-04-11

Family

ID=32300127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004006964A Expired - Fee Related JP3903988B2 (ja) 2001-07-04 2004-01-14 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP3903988B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3839799B2 (ja) * 2003-08-06 2006-11-01 ローム株式会社 半導体発光素子
KR100618288B1 (ko) 2005-03-21 2006-08-31 주식회사 이츠웰 터널링 층위에 제1 오믹 전극을 형성한 질화물 반도체 발광다이오드
US7462884B2 (en) 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
JP2009016467A (ja) 2007-07-03 2009-01-22 Sony Corp 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置
JP4640427B2 (ja) * 2008-03-14 2011-03-02 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の製造方法、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
KR102187480B1 (ko) * 2014-01-21 2020-12-08 엘지이노텍 주식회사 발광 소자 및 발광소자 제조방법

Similar Documents

Publication Publication Date Title
JP5352248B2 (ja) 窒化物半導体発光素子およびその製造方法
TWI283935B (en) Group III nitride compound semiconductor light emitting device
EP2763192B1 (en) Nitride semiconductor element and method for producing same
JP2010531058A5 (enExample)
JP2009027201A5 (enExample)
JP2009260398A5 (enExample)
JP6077201B2 (ja) 発光ダイオードおよびその製造方法
JP5381853B2 (ja) 半導体発光素子
JP2012015535A5 (enExample)
JP2010532926A5 (enExample)
JP2011504660A5 (enExample)
JP2010541223A5 (enExample)
CA2528719A1 (en) Nitride semiconductor light emitting device
JP2004031770A5 (enExample)
TWI321363B (en) Iii-nitride light emitting device with p-type active layer
JP2013021173A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2000133883A5 (enExample)
JP2006324685A5 (enExample)
JP2003101154A5 (enExample)
JP2007042751A (ja) 半導体発光素子
EP1343231A3 (en) A group III nitride compound semiconductor laser
JP2010040838A5 (enExample)
JP2004112002A5 (enExample)
JP2011029493A5 (enExample)
JP2017069388A (ja) 半導体光学素子