JP3828777B2 - 磁気抵抗効果ヘッド - Google Patents

磁気抵抗効果ヘッド Download PDF

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Publication number
JP3828777B2
JP3828777B2 JP2001322952A JP2001322952A JP3828777B2 JP 3828777 B2 JP3828777 B2 JP 3828777B2 JP 2001322952 A JP2001322952 A JP 2001322952A JP 2001322952 A JP2001322952 A JP 2001322952A JP 3828777 B2 JP3828777 B2 JP 3828777B2
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JP
Japan
Prior art keywords
film
antiferromagnetic
layer
free layer
domain control
Prior art date
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Expired - Lifetime
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JP2001322952A
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English (en)
Japanese (ja)
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JP2003132508A5 (enExample
JP2003132508A (ja
Inventor
諭 森永
孝佳 大津
Original Assignee
株式会社日立グローバルストレージテクノロジーズ
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Publication date
Application filed by 株式会社日立グローバルストレージテクノロジーズ filed Critical 株式会社日立グローバルストレージテクノロジーズ
Priority to JP2001322952A priority Critical patent/JP3828777B2/ja
Priority to US10/075,241 priority patent/US6704177B2/en
Publication of JP2003132508A publication Critical patent/JP2003132508A/ja
Priority to US10/771,312 priority patent/US7230803B2/en
Publication of JP2003132508A5 publication Critical patent/JP2003132508A5/ja
Application granted granted Critical
Publication of JP3828777B2 publication Critical patent/JP3828777B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
JP2001322952A 2001-10-22 2001-10-22 磁気抵抗効果ヘッド Expired - Lifetime JP3828777B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001322952A JP3828777B2 (ja) 2001-10-22 2001-10-22 磁気抵抗効果ヘッド
US10/075,241 US6704177B2 (en) 2001-10-22 2002-02-15 Magnetic head with magnetic domain control structure having antiferromagnetic layer and magnetic layer
US10/771,312 US7230803B2 (en) 2001-10-22 2004-02-05 Magnetic head with magnetic domain control structure having anti-ferromagnetic layer and plural magnetic layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001322952A JP3828777B2 (ja) 2001-10-22 2001-10-22 磁気抵抗効果ヘッド

Publications (3)

Publication Number Publication Date
JP2003132508A JP2003132508A (ja) 2003-05-09
JP2003132508A5 JP2003132508A5 (enExample) 2005-07-07
JP3828777B2 true JP3828777B2 (ja) 2006-10-04

Family

ID=19139911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001322952A Expired - Lifetime JP3828777B2 (ja) 2001-10-22 2001-10-22 磁気抵抗効果ヘッド

Country Status (2)

Country Link
US (1) US6704177B2 (enExample)
JP (1) JP3828777B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332649A (ja) * 2002-05-14 2003-11-21 Alps Electric Co Ltd 磁気検出素子
US7130165B2 (en) * 2002-06-05 2006-10-31 Seagate Technology Llc Side shielded current in plane spin-valve
US6713800B2 (en) * 2002-06-27 2004-03-30 Seagate Technology Llc Magnetoresistive sensor with reduced side-reading effect
US7016166B1 (en) * 2002-10-10 2006-03-21 Seagate Technology Llc Mag-tab design for biasing magnetic sensors
US7382585B1 (en) 2005-09-30 2008-06-03 Storage Technology Corporation Magnetic head having AMR reader, writer, and GMR reader
US7453671B1 (en) 2005-10-31 2008-11-18 Stoarge Technology Corporation Magnetic head having a pair of magneto-resistive (MR) readers of the same type with each reader being tuned differently
JP2010123212A (ja) * 2008-11-20 2010-06-03 Hitachi Global Storage Technologies Netherlands Bv 垂直電流型再生磁気ヘッド及びその製造方法
JP5101659B2 (ja) * 2010-05-25 2012-12-19 株式会社東芝 血圧センサ
JP5367877B2 (ja) * 2012-06-19 2013-12-11 株式会社東芝 Ｍｅｍｓ圧力センサ
US20150092303A1 (en) * 2013-10-01 2015-04-02 HGST Netherlands B.V. Graded side shield gap reader
KR102451098B1 (ko) 2015-09-23 2022-10-05 삼성전자주식회사 자기 메모리 장치 및 이의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
US5018037A (en) * 1989-10-10 1991-05-21 Krounbi Mohamad T Magnetoresistive read transducer having hard magnetic bias
JP3125311B2 (ja) 1991-02-25 2001-01-15 セイコーエプソン株式会社 電気光学装置
JP3990751B2 (ja) * 1995-07-25 2007-10-17 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型磁気ヘッド及び磁気記録再生装置
JP3787403B2 (ja) * 1996-02-14 2006-06-21 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型ヘッド
US6690553B2 (en) * 1996-08-26 2004-02-10 Kabushiki Kaisha Toshiba Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
US5739990A (en) * 1996-11-13 1998-04-14 Read-Rite Corporation Spin-valve GMR sensor with inbound exchange stabilization
JPH11203634A (ja) * 1998-01-16 1999-07-30 Hitachi Metals Ltd 磁気抵抗効果型ヘッド
JP2000331320A (ja) * 1998-06-30 2000-11-30 Toshiba Corp 磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置
US6324037B1 (en) * 1999-07-26 2001-11-27 Headway Technologies, Inc. Magnetically stable spin-valve sensor
JP3981856B2 (ja) * 1999-09-14 2007-09-26 富士通株式会社 薄膜磁気ヘッド
JP2001307308A (ja) * 2000-04-24 2001-11-02 Fujitsu Ltd 磁気抵抗効果型ヘッドおよび情報再生装置
JP2001351209A (ja) * 2000-06-06 2001-12-21 Fujitsu Ltd スピンバルブヘッド及びその製造方法ならびに磁気ディスク装置

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Publication number Publication date
US20030076635A1 (en) 2003-04-24
JP2003132508A (ja) 2003-05-09
US6704177B2 (en) 2004-03-09

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