JP3788022B2 - 薄膜トランジスタおよびその製造方法 - Google Patents

薄膜トランジスタおよびその製造方法 Download PDF

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Publication number
JP3788022B2
JP3788022B2 JP08465798A JP8465798A JP3788022B2 JP 3788022 B2 JP3788022 B2 JP 3788022B2 JP 08465798 A JP08465798 A JP 08465798A JP 8465798 A JP8465798 A JP 8465798A JP 3788022 B2 JP3788022 B2 JP 3788022B2
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JP
Japan
Prior art keywords
semiconductor film
region
film
side end
polycrystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP08465798A
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English (en)
Japanese (ja)
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JPH11284192A (ja
JPH11284192A5 (enExample
Inventor
敏 竹中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP08465798A priority Critical patent/JP3788022B2/ja
Publication of JPH11284192A publication Critical patent/JPH11284192A/ja
Publication of JPH11284192A5 publication Critical patent/JPH11284192A5/ja
Application granted granted Critical
Publication of JP3788022B2 publication Critical patent/JP3788022B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device

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  • Thin Film Transistor (AREA)
JP08465798A 1998-03-30 1998-03-30 薄膜トランジスタおよびその製造方法 Expired - Fee Related JP3788022B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP08465798A JP3788022B2 (ja) 1998-03-30 1998-03-30 薄膜トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08465798A JP3788022B2 (ja) 1998-03-30 1998-03-30 薄膜トランジスタおよびその製造方法

Publications (3)

Publication Number Publication Date
JPH11284192A JPH11284192A (ja) 1999-10-15
JPH11284192A5 JPH11284192A5 (enExample) 2004-08-05
JP3788022B2 true JP3788022B2 (ja) 2006-06-21

Family

ID=13836801

Family Applications (1)

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JP08465798A Expired - Fee Related JP3788022B2 (ja) 1998-03-30 1998-03-30 薄膜トランジスタおよびその製造方法

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JP (1) JP3788022B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216402A (ja) * 2013-04-24 2014-11-17 セイコーエプソン株式会社 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
CN115425090A (zh) * 2022-08-30 2022-12-02 武汉华星光电技术有限公司 薄膜晶体管及其电子器件
WO2025050444A1 (zh) * 2023-09-06 2025-03-13 武汉华星光电技术有限公司 半导体器件、显示面板及芯片

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136369A (ja) * 1983-12-26 1985-07-19 Toshiba Corp 半導体装置及びその製造方法
JPS63244683A (ja) * 1987-03-30 1988-10-12 Mitsubishi Electric Corp 電界効果型半導体装置およびその製造方法
JPH01283879A (ja) * 1988-05-11 1989-11-15 Nippon Telegr & Teleph Corp <Ntt> 薄膜形半導体装置とその製造方法
JP2757491B2 (ja) * 1989-09-27 1998-05-25 日産自動車 株式会社 半導体装置の製造方法
JPH06326314A (ja) * 1993-05-12 1994-11-25 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPH07106588A (ja) * 1993-10-04 1995-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3344072B2 (ja) * 1994-03-31 2002-11-11 ソニー株式会社 薄膜トランジスタの製造方法
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置

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Publication number Publication date
JPH11284192A (ja) 1999-10-15

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