JP3776281B2 - インダクティブ素子 - Google Patents

インダクティブ素子 Download PDF

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Publication number
JP3776281B2
JP3776281B2 JP2000061778A JP2000061778A JP3776281B2 JP 3776281 B2 JP3776281 B2 JP 3776281B2 JP 2000061778 A JP2000061778 A JP 2000061778A JP 2000061778 A JP2000061778 A JP 2000061778A JP 3776281 B2 JP3776281 B2 JP 3776281B2
Authority
JP
Japan
Prior art keywords
magnetic
film
layer
coil layer
magnetic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000061778A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000357612A (ja
JP2000357612A5 (cg-RX-API-DMAC7.html
Inventor
栄一 駒井
義人 佐々木
和志 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2000061778A priority Critical patent/JP3776281B2/ja
Priority to KR1020000016395A priority patent/KR100331732B1/ko
Priority to TW089106116A priority patent/TW451232B/zh
Priority to US09/547,639 priority patent/US6603382B1/en
Publication of JP2000357612A publication Critical patent/JP2000357612A/ja
Publication of JP2000357612A5 publication Critical patent/JP2000357612A5/ja
Application granted granted Critical
Publication of JP3776281B2 publication Critical patent/JP3776281B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/04—Fixed inductances of the signal type with magnetic core

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Thin Magnetic Films (AREA)
JP2000061778A 1999-04-13 2000-03-07 インダクティブ素子 Expired - Fee Related JP3776281B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000061778A JP3776281B2 (ja) 1999-04-13 2000-03-07 インダクティブ素子
KR1020000016395A KR100331732B1 (ko) 1999-04-13 2000-03-30 인덕티브 소자
TW089106116A TW451232B (en) 1999-04-13 2000-03-31 Inductive element
US09/547,639 US6603382B1 (en) 1999-04-13 2000-04-12 Inductive element having improved superposed DC current characteristic

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10484299 1999-04-13
JP11-104842 1999-04-13
JP2000061778A JP3776281B2 (ja) 1999-04-13 2000-03-07 インダクティブ素子

Publications (3)

Publication Number Publication Date
JP2000357612A JP2000357612A (ja) 2000-12-26
JP2000357612A5 JP2000357612A5 (cg-RX-API-DMAC7.html) 2004-08-19
JP3776281B2 true JP3776281B2 (ja) 2006-05-17

Family

ID=26445220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000061778A Expired - Fee Related JP3776281B2 (ja) 1999-04-13 2000-03-07 インダクティブ素子

Country Status (4)

Country Link
US (1) US6603382B1 (cg-RX-API-DMAC7.html)
JP (1) JP3776281B2 (cg-RX-API-DMAC7.html)
KR (1) KR100331732B1 (cg-RX-API-DMAC7.html)
TW (1) TW451232B (cg-RX-API-DMAC7.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768409B2 (en) * 2001-08-29 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magnetic device, method for manufacturing the same, and power supply module equipped with the same
JP4043306B2 (ja) * 2002-07-15 2008-02-06 Ｊｆｅスチール株式会社 平面磁気素子
JP4133677B2 (ja) * 2003-08-22 2008-08-13 東光株式会社 積層型電子部品
KR100768919B1 (ko) * 2004-12-23 2007-10-19 삼성전자주식회사 전원 생성 장치
US8248200B2 (en) * 2006-03-24 2012-08-21 Panasonic Corporation Inductance component
US20100253456A1 (en) * 2007-06-15 2010-10-07 Yipeng Yan Miniature shielded magnetic component and methods of manufacture
JP5118394B2 (ja) * 2007-06-20 2013-01-16 パナソニック株式会社 非接触電力伝送機器
US8922160B2 (en) * 2007-08-21 2014-12-30 Kabushiki Kaisha Toshiba Non-contact type power receiving apparatus, electronic equipment and charging system using the power receiving apparatus
JP2009267077A (ja) * 2008-04-25 2009-11-12 Seiko Epson Corp コイルユニット及びそれを用いた電子機器
JP4572953B2 (ja) * 2008-05-14 2010-11-04 セイコーエプソン株式会社 コイルユニットおよびそれを用いた電子機器
US9859043B2 (en) * 2008-07-11 2018-01-02 Cooper Technologies Company Magnetic components and methods of manufacturing the same
US20100277267A1 (en) * 2009-05-04 2010-11-04 Robert James Bogert Magnetic components and methods of manufacturing the same
CN102003903B (zh) * 2009-08-31 2013-07-03 富准精密工业(深圳)有限公司 热管及采用该热管的散热装置
JP2013219156A (ja) * 2012-04-06 2013-10-24 Japan Science & Technology Agency インダクタ、及び、その製造方法
US9087637B2 (en) * 2012-07-29 2015-07-21 Qualcomm Incorporated Universal apparatus for wireless device charging using radio frequency (RF) energy
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
CN104282411B (zh) 2013-07-03 2018-04-10 库柏技术公司 低轮廓、表面安装电磁部件组件以及制造方法
US9449753B2 (en) * 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
JP6270509B2 (ja) * 2014-01-30 2018-01-31 太陽誘電株式会社 積層型コイル部品
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
KR20160053380A (ko) * 2014-11-04 2016-05-13 삼성전기주식회사 적층형 인덕터
US20180218828A1 (en) * 2017-01-27 2018-08-02 Toyota Motor Engineering & Manufacturing North America, Inc. Inductor with variable permeability core
CN107146690B (zh) 2017-03-03 2019-11-05 华为机器有限公司 一种薄膜电感、电源转换电路和芯片
CN108387784B (zh) * 2018-02-02 2020-11-20 上海交通大学 一种磁膜电感传感器
KR102122925B1 (ko) * 2018-11-02 2020-06-15 삼성전기주식회사 코일 전자부품

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960006848B1 (ko) * 1990-05-31 1996-05-23 가부시끼가이샤 도시바 평면형 자기소자
JPH08273934A (ja) * 1995-04-03 1996-10-18 Murata Mfg Co Ltd コイル部品

Also Published As

Publication number Publication date
JP2000357612A (ja) 2000-12-26
TW451232B (en) 2001-08-21
US6603382B1 (en) 2003-08-05
KR100331732B1 (ko) 2002-04-09
KR20010014659A (ko) 2001-02-26

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