TW451232B - Inductive element - Google Patents
Inductive element Download PDFInfo
- Publication number
- TW451232B TW451232B TW089106116A TW89106116A TW451232B TW 451232 B TW451232 B TW 451232B TW 089106116 A TW089106116 A TW 089106116A TW 89106116 A TW89106116 A TW 89106116A TW 451232 B TW451232 B TW 451232B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- film
- layer
- magnetic film
- coil layer
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title claims abstract description 23
- 230000002079 cooperative effect Effects 0.000 claims description 11
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 244000005700 microbiome Species 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 648
- 230000035699 permeability Effects 0.000 abstract description 86
- 230000004907 flux Effects 0.000 abstract description 76
- 238000009826 distribution Methods 0.000 abstract description 52
- 239000010409 thin film Substances 0.000 abstract description 46
- 230000001965 increasing effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 451
- 239000000696 magnetic material Substances 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 33
- 230000005415 magnetization Effects 0.000 description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- 238000010030 laminating Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10484299 | 1999-04-13 | ||
| JP2000061778A JP3776281B2 (ja) | 1999-04-13 | 2000-03-07 | インダクティブ素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW451232B true TW451232B (en) | 2001-08-21 |
Family
ID=26445220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089106116A TW451232B (en) | 1999-04-13 | 2000-03-31 | Inductive element |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6603382B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP3776281B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR100331732B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW451232B (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146690A (zh) * | 2017-03-03 | 2017-09-08 | 华为机器有限公司 | 一种薄膜电感、电源转换电路和芯片 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768409B2 (en) * | 2001-08-29 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magnetic device, method for manufacturing the same, and power supply module equipped with the same |
| JP4043306B2 (ja) * | 2002-07-15 | 2008-02-06 | Ｊｆｅスチール株式会社 | 平面磁気素子 |
| JP4133677B2 (ja) * | 2003-08-22 | 2008-08-13 | 東光株式会社 | 積層型電子部品 |
| KR100768919B1 (ko) * | 2004-12-23 | 2007-10-19 | 삼성전자주식회사 | 전원 생성 장치 |
| US8248200B2 (en) * | 2006-03-24 | 2012-08-21 | Panasonic Corporation | Inductance component |
| US20100253456A1 (en) * | 2007-06-15 | 2010-10-07 | Yipeng Yan | Miniature shielded magnetic component and methods of manufacture |
| JP5118394B2 (ja) * | 2007-06-20 | 2013-01-16 | パナソニック株式会社 | 非接触電力伝送機器 |
| US8922160B2 (en) * | 2007-08-21 | 2014-12-30 | Kabushiki Kaisha Toshiba | Non-contact type power receiving apparatus, electronic equipment and charging system using the power receiving apparatus |
| JP2009267077A (ja) * | 2008-04-25 | 2009-11-12 | Seiko Epson Corp | コイルユニット及びそれを用いた電子機器 |
| JP4572953B2 (ja) * | 2008-05-14 | 2010-11-04 | セイコーエプソン株式会社 | コイルユニットおよびそれを用いた電子機器 |
| US9859043B2 (en) * | 2008-07-11 | 2018-01-02 | Cooper Technologies Company | Magnetic components and methods of manufacturing the same |
| US20100277267A1 (en) * | 2009-05-04 | 2010-11-04 | Robert James Bogert | Magnetic components and methods of manufacturing the same |
| CN102003903B (zh) * | 2009-08-31 | 2013-07-03 | 富准精密工业(深圳)有限公司 | 热管及采用该热管的散热装置 |
| JP2013219156A (ja) * | 2012-04-06 | 2013-10-24 | Japan Science & Technology Agency | インダクタ、及び、その製造方法 |
| US9087637B2 (en) * | 2012-07-29 | 2015-07-21 | Qualcomm Incorporated | Universal apparatus for wireless device charging using radio frequency (RF) energy |
| US9431473B2 (en) | 2012-11-21 | 2016-08-30 | Qualcomm Incorporated | Hybrid transformer structure on semiconductor devices |
| US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
| US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
| CN104282411B (zh) | 2013-07-03 | 2018-04-10 | 库柏技术公司 | 低轮廓、表面安装电磁部件组件以及制造方法 |
| US9449753B2 (en) * | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
| JP6270509B2 (ja) * | 2014-01-30 | 2018-01-31 | 太陽誘電株式会社 | 積層型コイル部品 |
| US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
| KR20160053380A (ko) * | 2014-11-04 | 2016-05-13 | 삼성전기주식회사 | 적층형 인덕터 |
| US20180218828A1 (en) * | 2017-01-27 | 2018-08-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Inductor with variable permeability core |
| CN108387784B (zh) * | 2018-02-02 | 2020-11-20 | 上海交通大学 | 一种磁膜电感传感器 |
| KR102122925B1 (ko) * | 2018-11-02 | 2020-06-15 | 삼성전기주식회사 | 코일 전자부품 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960006848B1 (ko) * | 1990-05-31 | 1996-05-23 | 가부시끼가이샤 도시바 | 평면형 자기소자 |
| JPH08273934A (ja) * | 1995-04-03 | 1996-10-18 | Murata Mfg Co Ltd | コイル部品 |
-
2000
- 2000-03-07 JP JP2000061778A patent/JP3776281B2/ja not_active Expired - Fee Related
- 2000-03-30 KR KR1020000016395A patent/KR100331732B1/ko not_active Expired - Fee Related
- 2000-03-31 TW TW089106116A patent/TW451232B/zh not_active IP Right Cessation
- 2000-04-12 US US09/547,639 patent/US6603382B1/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146690A (zh) * | 2017-03-03 | 2017-09-08 | 华为机器有限公司 | 一种薄膜电感、电源转换电路和芯片 |
| CN107146690B (zh) * | 2017-03-03 | 2019-11-05 | 华为机器有限公司 | 一种薄膜电感、电源转换电路和芯片 |
| US10790079B2 (en) | 2017-03-03 | 2020-09-29 | Huawei Technologies Co., Ltd. | Thin film inductor, power conversion circuit, and chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000357612A (ja) | 2000-12-26 |
| US6603382B1 (en) | 2003-08-05 |
| KR100331732B1 (ko) | 2002-04-09 |
| KR20010014659A (ko) | 2001-02-26 |
| JP3776281B2 (ja) | 2006-05-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |