JP3768819B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3768819B2
JP3768819B2 JP2001024092A JP2001024092A JP3768819B2 JP 3768819 B2 JP3768819 B2 JP 3768819B2 JP 2001024092 A JP2001024092 A JP 2001024092A JP 2001024092 A JP2001024092 A JP 2001024092A JP 3768819 B2 JP3768819 B2 JP 3768819B2
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JP
Japan
Prior art keywords
photomask
light
mask
pattern
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001024092A
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English (en)
Japanese (ja)
Other versions
JP2002231607A5 (enExample
JP2002231607A (ja
Inventor
稔彦 田中
孝司 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001024092A priority Critical patent/JP3768819B2/ja
Priority to TW090127025A priority patent/TW522481B/zh
Priority to KR1020010073184A priority patent/KR20020064138A/ko
Priority to US10/044,987 priority patent/US6703328B2/en
Publication of JP2002231607A publication Critical patent/JP2002231607A/ja
Publication of JP2002231607A5 publication Critical patent/JP2002231607A5/ja
Application granted granted Critical
Publication of JP3768819B2 publication Critical patent/JP3768819B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Library & Information Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001024092A 2001-01-31 2001-01-31 半導体装置の製造方法 Expired - Fee Related JP3768819B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001024092A JP3768819B2 (ja) 2001-01-31 2001-01-31 半導体装置の製造方法
TW090127025A TW522481B (en) 2001-01-31 2001-10-31 A semiconductor device manufacturing method
KR1020010073184A KR20020064138A (ko) 2001-01-31 2001-11-23 반도체장치의 제조방법
US10/044,987 US6703328B2 (en) 2001-01-31 2002-01-15 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001024092A JP3768819B2 (ja) 2001-01-31 2001-01-31 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002231607A JP2002231607A (ja) 2002-08-16
JP2002231607A5 JP2002231607A5 (enExample) 2005-06-16
JP3768819B2 true JP3768819B2 (ja) 2006-04-19

Family

ID=18889289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001024092A Expired - Fee Related JP3768819B2 (ja) 2001-01-31 2001-01-31 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6703328B2 (enExample)
JP (1) JP3768819B2 (enExample)
KR (1) KR20020064138A (enExample)
TW (1) TW522481B (enExample)

Families Citing this family (253)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4085147B2 (ja) * 2002-10-11 2008-05-14 スパンション エルエルシー 半導体装置の製造方法及び製造装置
US6926840B2 (en) * 2002-12-31 2005-08-09 Eastman Kodak Company Flexible frame for mounting a deposition mask
JP3989869B2 (ja) * 2003-04-14 2007-10-10 沖電気工業株式会社 半導体装置及びその製造方法
JP4015087B2 (ja) * 2003-08-27 2007-11-28 株式会社東芝 レチクル、及び露光方法
KR100572519B1 (ko) 2003-12-26 2006-04-19 엘지.필립스 엘시디 주식회사 레이저 결정화 공정용 마스크 및 상기 마스크를 이용한레이저 결정화 공정
KR100520240B1 (ko) * 2004-01-08 2005-10-11 삼성전자주식회사 포토레지스트 패턴 및 그의 형성방법
US7422828B1 (en) * 2004-02-06 2008-09-09 Advanced Micro Devices, Inc. Mask CD measurement monitor outside of the pellicle area
JP4008934B2 (ja) * 2004-05-28 2007-11-14 株式会社東芝 画像データの補正方法、リソグラフィシミュレーション方法、プログラム及びマスク
US7313781B2 (en) 2004-05-28 2007-12-25 Kabushiki Kaisha Toshiba Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device
TWI257071B (en) * 2004-08-02 2006-06-21 Powerchip Semiconductor Corp Mask management method and bar code reading apparatus thereof
KR100671679B1 (ko) * 2004-08-25 2007-01-18 삼성에스디아이 주식회사 발광 표시장치
KR100587910B1 (ko) 2004-12-28 2006-06-09 동부일렉트로닉스 주식회사 레티클 로테이션 방법 및 장치
JP2006228776A (ja) * 2005-02-15 2006-08-31 Advantest Corp 荷電粒子ビーム露光装置及び荷電粒子ビーム露光方法
JP5153136B2 (ja) * 2005-12-28 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI400758B (zh) * 2005-12-28 2013-07-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8582079B2 (en) * 2007-08-14 2013-11-12 Applied Materials, Inc. Using phase difference of interference lithography for resolution enhancement
US20090117491A1 (en) * 2007-08-31 2009-05-07 Applied Materials, Inc. Resolution enhancement techniques combining interference-assisted lithography with other photolithography techniques
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JP4939583B2 (ja) * 2009-09-09 2012-05-30 日東電工株式会社 回路付きサスペンション基板集合体シートおよびその製造方法
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