JP3748779B2 - 半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート - Google Patents

半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート Download PDF

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Publication number
JP3748779B2
JP3748779B2 JP2001040357A JP2001040357A JP3748779B2 JP 3748779 B2 JP3748779 B2 JP 3748779B2 JP 2001040357 A JP2001040357 A JP 2001040357A JP 2001040357 A JP2001040357 A JP 2001040357A JP 3748779 B2 JP3748779 B2 JP 3748779B2
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Japan
Prior art keywords
semiconductor element
light emitting
sheet
emitting element
external electrode
Prior art date
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Expired - Fee Related
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JP2001040357A
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English (en)
Japanese (ja)
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JP2002246418A (ja
JP2002246418A5 (https=
Inventor
法人 塚原
和司 東
博之 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2001040357A priority Critical patent/JP3748779B2/ja
Publication of JP2002246418A publication Critical patent/JP2002246418A/ja
Publication of JP2002246418A5 publication Critical patent/JP2002246418A5/ja
Application granted granted Critical
Publication of JP3748779B2 publication Critical patent/JP3748779B2/ja
Anticipated expiration legal-status Critical
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/074Connecting or disconnecting of anisotropic conductive adhesives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2001040357A 2001-02-16 2001-02-16 半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート Expired - Fee Related JP3748779B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001040357A JP3748779B2 (ja) 2001-02-16 2001-02-16 半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001040357A JP3748779B2 (ja) 2001-02-16 2001-02-16 半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート

Publications (3)

Publication Number Publication Date
JP2002246418A JP2002246418A (ja) 2002-08-30
JP2002246418A5 JP2002246418A5 (https=) 2005-05-26
JP3748779B2 true JP3748779B2 (ja) 2006-02-22

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JP2001040357A Expired - Fee Related JP3748779B2 (ja) 2001-02-16 2001-02-16 半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート

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JP (1) JP3748779B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251328B2 (en) 2012-11-12 2022-02-15 Epistar Corporation Semiconductor light emitting device and method of fabricating the same

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821878B2 (en) * 2003-02-27 2004-11-23 Freescale Semiconductor, Inc. Area-array device assembly with pre-applied underfill layers on printed wiring board
JP4649852B2 (ja) * 2004-03-08 2011-03-16 カシオ計算機株式会社 電子部品の接合方法および電子部品の接合構造
JP4670697B2 (ja) * 2006-03-24 2011-04-13 株式会社デンソー センサ装置の製造方法
JP5141545B2 (ja) * 2008-12-26 2013-02-13 株式会社デンソー 力学量センサ装置
JPWO2011093405A1 (ja) * 2010-02-01 2013-06-06 有限会社Mtec チップサイズパッケージの光半導体装置
JP5998450B2 (ja) * 2011-10-19 2016-09-28 住友ベークライト株式会社 光導波路モジュール、光導波路モジュールの製造方法および電子機器
CN108922959B (zh) 2013-03-28 2022-07-29 日亚化学工业株式会社 发光装置、及使用发光装置的装置
JP5723497B2 (ja) 2013-03-28 2015-05-27 東芝ホクト電子株式会社 発光装置の製造方法
WO2015083365A1 (ja) 2013-12-02 2015-06-11 東芝ホクト電子株式会社 発光装置およびその製造方法
CN105518886A (zh) 2013-12-02 2016-04-20 东芝北斗电子株式会社 发光单元、发光装置及发光单元的制造方法
WO2015083364A1 (ja) 2013-12-02 2015-06-11 東芝ホクト電子株式会社 発光装置
JPWO2015146115A1 (ja) 2014-03-25 2017-04-13 東芝ホクト電子株式会社 発光装置
CN106030839B (zh) 2014-09-26 2018-09-28 东芝北斗电子株式会社 发光模块
WO2016047133A1 (ja) 2014-09-26 2016-03-31 東芝ホクト電子株式会社 発光モジュール
US11362060B2 (en) 2019-01-25 2022-06-14 Epistar Corporation Method and structure for die bonding using energy beam
CN112992757B (zh) * 2020-07-03 2022-04-29 重庆康佳光电技术研究院有限公司 微发光二极管芯片巨量转移方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251328B2 (en) 2012-11-12 2022-02-15 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US11791436B2 (en) 2012-11-12 2023-10-17 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US12471412B2 (en) 2012-11-12 2025-11-11 Epistar Corporation Semiconductor light emitting device and method of fabricating the same

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JP2002246418A (ja) 2002-08-30

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