JPWO2015146115A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JPWO2015146115A1 JPWO2015146115A1 JP2016510018A JP2016510018A JPWO2015146115A1 JP WO2015146115 A1 JPWO2015146115 A1 JP WO2015146115A1 JP 2016510018 A JP2016510018 A JP 2016510018A JP 2016510018 A JP2016510018 A JP 2016510018A JP WO2015146115 A1 JPWO2015146115 A1 JP WO2015146115A1
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- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
第1の実施形態に係る発光装置について、図面を参照して説明する。
次に、第2の実施形態に係る発光装置100について説明する。図8は、第2の実施形態に係る発光装置100の要部を示す断面図である。
4,6 支持基体
5 導電回路層
5a〜5h パターン
10〜30 発光ユニット
13 絶縁樹脂
22B 発光素子
22G 発光素子
22R 発光素子
23 絶縁基板
24 N型半導体層
25 活性層
26 P型半導体層
27 発光素子本体
28,29 電極
40 中間樹脂
50 制御装置
60 拡散体
101,102,201,202,301,302 端子
Claims (13)
- 光透過性を有する基体と、
一方の面にのみ電極が形成され、前記基体に形成される導体層に、前記電極が接続される第1発光素子と、
一方の面にのみ電極が形成され、前記基体に形成される導体層に、前記電極が接続され、前記第1発光素子からの光の色と異なる色の光を射出する第2発光素子と、
前記基体に対して、前記発光素子を保持する樹脂層と、
を備える発光装置。 - 一方の面にのみ電極が形成され、前記第1発光素子と前記第2発光素子のうちのいずれかと重なった状態で、前記基体に形成される導体層に接続され、前記第1発光素子の光の色と前記第2発光素子の光の色の双方と異なる色の光を射出する第3発光素子を備える請求項1に記載の発光装置。
- 第1基体と、前記第1基体に対向するように配置される第2基体を備え、
前記第1発光素子の前記電極は、前記第1基体の導体層に接続され、
前記第2発光素子の前記電極は、前記第2基体の導体層に接続される請求項1に記載の発光装置。 - 前記第1基体に対して、前記第1発光素子を保持する第1樹脂と、
前記第2基体に対して、前記第2発光素子を保持する第2樹脂と、
を有する請求項3に記載の発光装置。 - 相互に重なるように配置される第1基体、第2基体、及び第3基体を備え、
前記第1発光素子の前記電極は、前記第1基体の導体層に接続され、
前記第2発光素子の前記電極は、前記第2基体の導体層に接続され、
前記第3発光素子の前記電極は、前記第3基体の導体層に接続される請求項2に記載の発光装置。 - 前記第1基体に対して、前記第1発光素子を保持する第1樹脂と、
前記第2基体に対して、前記第2発光素子を保持する第2樹脂と、
前記第3基体に対して、前記第3発光素子を保持する第3樹脂と
を有する請求項5に記載の発光装置。 - 前記基体は、一方の面に導体層が形成され、他方の面が平坦である請求項1乃至6に記載の発光装置。
- 前記発光素子同士は、少なくとも一部が相互に重なっている請求項1乃至7のいずれか一項に記載の発光装置。
- 前記第1発光素子は、ピーク波長が600nmから700nmの間にあり、
前記第2発光素子は、ピーク波長が500nmから550nmの間にあり、
前記第3発光素子は、ピーク波長が450nmから500nmの間にある請求項6に記載の発光装置。 - 前記発光素子それぞれは、独立して光度調整が可能である請求項1乃至9のいずれか一項に記載の発光装置。
- 前記基体それぞれには、複数の前記発光素子が接続され、隣接する前記発光素子の間の距離は1500μm以下である請求項1乃至10のいずれか一項に記載の発光装置。
- 前記発光素子からの光を拡散させる拡散手段を備える請求項1乃至11のいずれか一項に記載の発光装置。
- 電力を供給するための第1電極を一つの面に有し、第1発光色で発光する第1発光素子と、
光透過性を有し、前記第1電極に電気的に接続する第1導体層が設けられ、前記第1発光素子に沿って湾曲的な形状である第1上部基体と、
前記第1上部基体に対して、前記第1発光素子本体を保持する第1絶縁樹脂層と、
略平坦で、前記第1絶縁樹脂層と前記第1発光素子とを支持し、光透過性を有する第1下部基体と、
電力を供給するための第2電極を一つの面に有し、第2発光色で発光し、前記第1発光素子と重なった状態で配置された第2発光素子と、
光透過性を有し、前記第2電極に電気的に接続する第2導体層が設けられ、前記第2発光素子に沿って湾曲的な形状である第2上部基体と、
前記第2上部基体に対して、前記第2発光素子本体を保持する第2絶縁樹脂層と、
前記第2絶縁樹脂層と前記第2発光素子本体を支持する、略平坦で、光透過性を有する第2下部基体と、
湾曲性を有する前記第2下部基体と略平坦な前記第2上部基体との間にある中間樹脂層と、
を備える発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014061993 | 2014-03-25 | ||
JP2014061993 | 2014-03-25 | ||
PCT/JP2015/001600 WO2015146115A1 (ja) | 2014-03-25 | 2015-03-23 | 発光装置 |
Publications (1)
Publication Number | Publication Date |
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JPWO2015146115A1 true JPWO2015146115A1 (ja) | 2017-04-13 |
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ID=54194665
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JP2016510018A Pending JPWO2015146115A1 (ja) | 2014-03-25 | 2015-03-23 | 発光装置 |
Country Status (3)
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US (1) | US9905545B2 (ja) |
JP (1) | JPWO2015146115A1 (ja) |
WO (1) | WO2015146115A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016213069A1 (de) | 2016-07-18 | 2018-01-18 | Osram Gmbh | Leuchtdiodenanordnung |
EP3818298A4 (en) | 2018-07-03 | 2022-03-23 | Glowgadget, LLC | FLEXIBLE LIGHTING PANEL AND LIGHTING BODY |
JP6897640B2 (ja) * | 2018-08-02 | 2021-07-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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JP2012084855A (ja) * | 2010-09-13 | 2012-04-26 | Toshiba Hokuto Electronics Corp | 発光装置 |
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2015
- 2015-03-23 JP JP2016510018A patent/JPWO2015146115A1/ja active Pending
- 2015-03-23 WO PCT/JP2015/001600 patent/WO2015146115A1/ja active Application Filing
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2016
- 2016-09-16 US US15/267,775 patent/US9905545B2/en active Active
Patent Citations (4)
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JP2012084855A (ja) * | 2010-09-13 | 2012-04-26 | Toshiba Hokuto Electronics Corp | 発光装置 |
JP2014033113A (ja) * | 2012-08-03 | 2014-02-20 | Showa Denko Kk | 発光装置および発光モジュール |
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US9905545B2 (en) | 2018-02-27 |
WO2015146115A1 (ja) | 2015-10-01 |
US20170005078A1 (en) | 2017-01-05 |
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