JP3729263B2 - 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置 - Google Patents

面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置 Download PDF

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Publication number
JP3729263B2
JP3729263B2 JP2002279066A JP2002279066A JP3729263B2 JP 3729263 B2 JP3729263 B2 JP 3729263B2 JP 2002279066 A JP2002279066 A JP 2002279066A JP 2002279066 A JP2002279066 A JP 2002279066A JP 3729263 B2 JP3729263 B2 JP 3729263B2
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layer
mirror
reflectance
resonator
region
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Expired - Fee Related
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JP2004119582A5 (enExample
JP2004119582A (ja
Inventor
剛 金子
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2002279066A priority Critical patent/JP3729263B2/ja
Priority to US10/665,447 priority patent/US7126977B2/en
Priority to EP03021180A priority patent/EP1403987B1/en
Priority to DE60304961T priority patent/DE60304961T2/de
Publication of JP2004119582A publication Critical patent/JP2004119582A/ja
Publication of JP2004119582A5 publication Critical patent/JP2004119582A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2002279066A 2002-09-25 2002-09-25 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置 Expired - Fee Related JP3729263B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002279066A JP3729263B2 (ja) 2002-09-25 2002-09-25 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置
US10/665,447 US7126977B2 (en) 2002-09-25 2003-09-22 Surface emitting semiconductor laser and manufacturing method thereof, light module, light transmission device
EP03021180A EP1403987B1 (en) 2002-09-25 2003-09-24 VCSEL with a reflection layer made of resin for single transverse mode emission
DE60304961T DE60304961T2 (de) 2002-09-25 2003-09-24 VCSEL mit einer reflektierenden Schicht aus Harz zur Emission einer transversalen Mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002279066A JP3729263B2 (ja) 2002-09-25 2002-09-25 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置

Publications (3)

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JP2004119582A JP2004119582A (ja) 2004-04-15
JP2004119582A5 JP2004119582A5 (enExample) 2005-09-08
JP3729263B2 true JP3729263B2 (ja) 2005-12-21

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US (1) US7126977B2 (enExample)
EP (1) EP1403987B1 (enExample)
JP (1) JP3729263B2 (enExample)
DE (1) DE60304961T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012104805A (ja) * 2010-10-16 2012-05-31 Canon Inc 面発光レーザ、面発光レーザアレイ、画像形成装置

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JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
JP4120813B2 (ja) 2003-06-12 2008-07-16 セイコーエプソン株式会社 光学部品およびその製造方法
JP4649866B2 (ja) * 2004-04-19 2011-03-16 ソニー株式会社 面発光半導体レーザー及びこれを用いた光学装置
JP4203752B2 (ja) * 2004-05-28 2009-01-07 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法、光スイッチ、ならびに、光分岐比可変素子
JP2006091285A (ja) * 2004-09-22 2006-04-06 Sumitomo Electric Ind Ltd 発光装置
US7483469B2 (en) 2004-11-01 2009-01-27 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device
JP4091647B2 (ja) * 2006-07-21 2008-05-28 三菱電機株式会社 半導体光素子の製造方法
US7499481B2 (en) 2006-11-14 2009-03-03 Canon Kabushiki Kaisha Surface-emitting laser and method for producing the same
WO2008075441A1 (ja) * 2006-12-18 2008-06-26 Seiko Epson Corporation 光チップおよび光モジュール
JP4582237B2 (ja) 2008-01-10 2010-11-17 ソニー株式会社 面発光型半導体レーザ
US8077752B2 (en) 2008-01-10 2011-12-13 Sony Corporation Vertical cavity surface emitting laser
JP2009266919A (ja) * 2008-04-23 2009-11-12 Sony Corp 面発光型半導体レーザおよびその製造方法
JP5505615B2 (ja) * 2009-12-02 2014-05-28 株式会社リコー 光デバイス、光走査装置及び画像形成装置
WO2016198282A1 (en) * 2015-06-09 2016-12-15 Koninklijke Philips N.V. Vertical cavity surface emitting laser
GB2573576B (en) * 2018-05-11 2020-06-10 Rockley Photonics Ltd Optoelectronic device and method of manufacturing thereof

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JP2012104805A (ja) * 2010-10-16 2012-05-31 Canon Inc 面発光レーザ、面発光レーザアレイ、画像形成装置

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Publication number Publication date
EP1403987A1 (en) 2004-03-31
US20040114654A1 (en) 2004-06-17
EP1403987B1 (en) 2006-05-03
US7126977B2 (en) 2006-10-24
DE60304961T2 (de) 2006-11-02
JP2004119582A (ja) 2004-04-15
DE60304961D1 (de) 2006-06-08

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