JP3628566B2 - スパッタリングターゲット及びその製造方法 - Google Patents

スパッタリングターゲット及びその製造方法 Download PDF

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Publication number
JP3628566B2
JP3628566B2 JP31823099A JP31823099A JP3628566B2 JP 3628566 B2 JP3628566 B2 JP 3628566B2 JP 31823099 A JP31823099 A JP 31823099A JP 31823099 A JP31823099 A JP 31823099A JP 3628566 B2 JP3628566 B2 JP 3628566B2
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Japan
Prior art keywords
indium
sputtering target
zinc
less
sintered body
Prior art date
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Expired - Lifetime
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JP31823099A
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English (en)
Japanese (ja)
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JP2001131736A (ja
Inventor
慶一 石塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
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Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Priority to JP31823099A priority Critical patent/JP3628566B2/ja
Priority to KR10-2001-7008548A priority patent/KR100413958B1/ko
Priority to PCT/JP2000/005172 priority patent/WO2001034869A1/ja
Priority to TW089126329A priority patent/TWI225521B/zh
Publication of JP2001131736A publication Critical patent/JP2001131736A/ja
Application granted granted Critical
Publication of JP3628566B2 publication Critical patent/JP3628566B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Conductive Materials (AREA)
JP31823099A 1999-11-09 1999-11-09 スパッタリングターゲット及びその製造方法 Expired - Lifetime JP3628566B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP31823099A JP3628566B2 (ja) 1999-11-09 1999-11-09 スパッタリングターゲット及びその製造方法
KR10-2001-7008548A KR100413958B1 (ko) 1999-11-09 2000-08-02 스퍼터링 타겟트 및 그 제조방법
PCT/JP2000/005172 WO2001034869A1 (fr) 1999-11-09 2000-08-02 Cible de pulverisation et procede de preparation
TW089126329A TWI225521B (en) 1999-11-09 2000-12-08 Sputtering target and method of manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31823099A JP3628566B2 (ja) 1999-11-09 1999-11-09 スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001131736A JP2001131736A (ja) 2001-05-15
JP3628566B2 true JP3628566B2 (ja) 2005-03-16

Family

ID=18096884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31823099A Expired - Lifetime JP3628566B2 (ja) 1999-11-09 1999-11-09 スパッタリングターゲット及びその製造方法

Country Status (4)

Country Link
JP (1) JP3628566B2 (ko)
KR (1) KR100413958B1 (ko)
TW (1) TWI225521B (ko)
WO (1) WO2001034869A1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843883B2 (ja) * 2001-08-17 2011-12-21 東ソー株式会社 スパッタリングターゲット
US7635440B2 (en) * 2003-03-04 2009-12-22 Nippon Mining & Metals Co., Ltd. Sputtering target, thin film for optical information recording medium and process for producing the same
JP4826066B2 (ja) * 2004-04-27 2011-11-30 住友金属鉱山株式会社 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法
JP5156181B2 (ja) * 2005-06-30 2013-03-06 出光興産株式会社 酸化インジウム・酸化亜鉛焼結体の製造方法
KR101317080B1 (ko) * 2005-07-01 2013-10-11 이데미쓰 고산 가부시키가이샤 Ｉｚｏ 스퍼터링 타겟의 제조방법
CN102337505A (zh) * 2005-09-01 2012-02-01 出光兴产株式会社 溅射靶、透明导电膜、透明电极和电极基板及其制造方法
EP2471972B1 (en) 2006-12-13 2014-01-29 Idemitsu Kosan Co., Ltd. Sputtering target
JP5237557B2 (ja) * 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及びその製造方法
JP4859726B2 (ja) * 2007-03-29 2012-01-25 三井金属鉱業株式会社 ＳｎＯ２系スパッタリングターゲットおよびスパッタ膜
JP5096250B2 (ja) * 2008-07-18 2012-12-12 出光興産株式会社 酸化物焼結体の製造方法、酸化物焼結体、スパッタリングタ−ゲット、酸化物薄膜、薄膜トランジスタの製造方法及び半導体装置
US20100108503A1 (en) * 2008-10-31 2010-05-06 Applied Quantum Technology, Llc Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same
KR20140011945A (ko) * 2012-07-19 2014-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃, 스퍼터링용 타깃의 사용 방법 및 산화물막의 제작 방법
JP6278229B2 (ja) * 2012-08-10 2018-02-14 三菱マテリアル株式会社 透明酸化物膜形成用スパッタリングターゲット及びその製造方法
JP5902333B1 (ja) * 2015-02-27 2016-04-13 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法
JP6125689B1 (ja) 2016-03-31 2017-05-10 Ｊｘ金属株式会社 酸化インジウム−酸化亜鉛系（ｉｚｏ）スパッタリングターゲット
JP6453990B2 (ja) * 2017-12-21 2019-01-16 Ｊｘ金属株式会社 焼結体、スパッタリングターゲット及びその製造方法
CN115572167A (zh) * 2022-10-18 2023-01-06 长沙壹纳光电材料有限公司 一种iwzo靶材及其制备方法与应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5417816A (en) * 1992-12-09 1995-05-23 Nikko Kyodo, Ltd. Process for preparation of indium oxide-tin oxide powder
WO1997001853A1 (fr) * 1995-06-28 1997-01-16 Idemitsu Kosan Co., Ltd. Stratifie transparent conducteur et ecran tactile realise a partir dudit stratifie
JP4081840B2 (ja) * 1997-02-28 2008-04-30 東ソー株式会社 スパッタリングターゲットの製造方法
JPH11302835A (ja) * 1998-04-21 1999-11-02 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体の製造方法
JPH11302074A (ja) * 1998-04-22 1999-11-02 Central Glass Co Ltd 複酸化物焼結体の製造方法

Also Published As

Publication number Publication date
KR100413958B1 (ko) 2004-01-07
TWI225521B (en) 2004-12-21
JP2001131736A (ja) 2001-05-15
KR20010093248A (ko) 2001-10-27
WO2001034869A1 (fr) 2001-05-17

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