JP3435786B2 - 不揮発性半導体記憶装置の製造方法 - Google Patents

不揮発性半導体記憶装置の製造方法

Info

Publication number
JP3435786B2
JP3435786B2 JP06238694A JP6238694A JP3435786B2 JP 3435786 B2 JP3435786 B2 JP 3435786B2 JP 06238694 A JP06238694 A JP 06238694A JP 6238694 A JP6238694 A JP 6238694A JP 3435786 B2 JP3435786 B2 JP 3435786B2
Authority
JP
Japan
Prior art keywords
polysilicon layer
insulating film
film
nitride film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06238694A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07273231A (ja
Inventor
正高 加藤
哲生 足立
均 久米
章二 宿利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP06238694A priority Critical patent/JP3435786B2/ja
Priority to TW083111433A priority patent/TW276349B/zh
Priority to KR1019950005458A priority patent/KR100450828B1/ko
Priority to US08/413,263 priority patent/US5672529A/en
Publication of JPH07273231A publication Critical patent/JPH07273231A/ja
Priority to US08/851,536 priority patent/US5932909A/en
Priority to US09/217,811 priority patent/US6211546B1/en
Priority to US09/819,803 priority patent/US6406958B2/en
Application granted granted Critical
Publication of JP3435786B2 publication Critical patent/JP3435786B2/ja
Priority to KR1020040013114A priority patent/KR100566416B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP06238694A 1994-03-31 1994-03-31 不揮発性半導体記憶装置の製造方法 Expired - Lifetime JP3435786B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP06238694A JP3435786B2 (ja) 1994-03-31 1994-03-31 不揮発性半導体記憶装置の製造方法
TW083111433A TW276349B (US07534539-20090519-C00280.png) 1994-03-31 1994-12-08
KR1019950005458A KR100450828B1 (ko) 1994-03-31 1995-03-16 불휘발성반도체기억장치의제조방법
US08/413,263 US5672529A (en) 1994-03-31 1995-03-30 Method of manufacturing nonvolatile semiconductor memory device
US08/851,536 US5932909A (en) 1994-03-31 1997-05-05 Nonvolatile semiconductor memory device
US09/217,811 US6211546B1 (en) 1994-03-31 1998-12-22 Method of manufacturing nonvolatile semiconductor memory device
US09/819,803 US6406958B2 (en) 1994-03-31 2001-03-29 Method of manufacturing nonvolatile semiconductor memory device
KR1020040013114A KR100566416B1 (ko) 1994-03-31 2004-02-26 불휘발성 반도체 기억장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06238694A JP3435786B2 (ja) 1994-03-31 1994-03-31 不揮発性半導体記憶装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2002378945A Division JP2003229501A (ja) 2002-12-27 2002-12-27 不揮発性半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPH07273231A JPH07273231A (ja) 1995-10-20
JP3435786B2 true JP3435786B2 (ja) 2003-08-11

Family

ID=13198642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06238694A Expired - Lifetime JP3435786B2 (ja) 1994-03-31 1994-03-31 不揮発性半導体記憶装置の製造方法

Country Status (4)

Country Link
US (4) US5672529A (US07534539-20090519-C00280.png)
JP (1) JP3435786B2 (US07534539-20090519-C00280.png)
KR (2) KR100450828B1 (US07534539-20090519-C00280.png)
TW (1) TW276349B (US07534539-20090519-C00280.png)

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* Cited by examiner, † Cited by third party
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JP3435786B2 (ja) * 1994-03-31 2003-08-11 株式会社日立製作所 不揮発性半導体記憶装置の製造方法
TW379417B (en) * 1998-06-04 2000-01-11 United Semiconductor Corp Buried bitline structure and the manufacture method
US6155537A (en) * 1998-07-09 2000-12-05 Windbond Electronics Corp. Deep submicron MOS transistors with a self-aligned gate electrode
TW399332B (en) * 1998-08-12 2000-07-21 United Microelectronics Corp The structure of flash memory cell and the manufacturing method thereof
FR2783972B1 (fr) * 1998-09-29 2003-05-30 Commissariat Energie Atomique Cellule memoire non volatile, auto-alignee, sans contact et a surface reduite
CN1184682C (zh) * 1999-03-03 2005-01-12 株式会社日立制作所 半导体集成电路器件及其制造方法
US6901006B1 (en) * 1999-07-14 2005-05-31 Hitachi, Ltd. Semiconductor integrated circuit device including first, second and third gates
JP4012350B2 (ja) * 1999-10-06 2007-11-21 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
US6320237B1 (en) 1999-11-08 2001-11-20 International Business Machines Corporation Decoupling capacitor structure
JP4354596B2 (ja) * 1999-12-10 2009-10-28 シャープ株式会社 半導体記憶装置の製造方法及び半導体記憶装置
JP3578688B2 (ja) * 1999-12-24 2004-10-20 Ｎｅｃエレクトロニクス株式会社 不揮発性メモリの製造方法
JP2002222878A (ja) * 2001-01-26 2002-08-09 Mitsubishi Electric Corp 不揮発性半導体装置およびその製造方法
US6893923B2 (en) * 2001-03-21 2005-05-17 International Rectifier Corporation Reduced mask count process for manufacture of mosgated device
JP2002353344A (ja) * 2001-05-29 2002-12-06 Toshiba Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の製造方法
JP3594001B2 (ja) * 2001-07-23 2004-11-24 セイコーエプソン株式会社 不揮発性半導体記憶装置
CN1302555C (zh) * 2001-11-15 2007-02-28 力晶半导体股份有限公司 非易失性半导体存储单元结构及其制作方法
JP5179692B2 (ja) * 2002-08-30 2013-04-10 富士通セミコンダクター株式会社 半導体記憶装置及びその製造方法
JP2004214495A (ja) * 2003-01-07 2004-07-29 Innotech Corp トランジスタとそれを用いた半導体メモリ、および半導体メモリの製造方法
US6621119B1 (en) * 2003-02-04 2003-09-16 Ching-Yuan Wu Isolated stack-gate flash cell structure and its contactless flash memory arrays
JP4557678B2 (ja) * 2004-02-13 2010-10-06 イノテック株式会社 半導体記憶装置
US7042044B2 (en) * 2004-02-18 2006-05-09 Koucheng Wu Nor-type channel-program channel-erase contactless flash memory on SOI
KR100784081B1 (ko) * 2006-04-06 2007-12-10 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
KR100823713B1 (ko) * 2006-09-08 2008-04-21 삼성전자주식회사 불휘발성 메모리 장치 및 이의 제조 방법
KR100816755B1 (ko) * 2006-10-19 2008-03-25 삼성전자주식회사 플래시 메모리 장치 및 그 제조방법
US20090218638A1 (en) * 2008-02-29 2009-09-03 Smith Michael A Nand flash peripheral circuitry field plate
KR20100078244A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 Ｏｔｐ 메모리 소자 및 ｏｔｐ 메모리 소자의 제조 방법
KR101651773B1 (ko) * 2015-02-11 2016-08-26 경남과학기술대학교 산학협력단 Elid 연삭가공 장치의 모니터링 시스템

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Publication number Priority date Publication date Assignee Title
JPS56142675A (en) * 1980-01-07 1981-11-07 Texas Instruments Inc Semiconductor memory and method of forming same
JPH02143464A (ja) * 1988-11-24 1990-06-01 Sony Corp 不揮発性メモリの製造方法
JPH03219496A (ja) * 1990-01-25 1991-09-26 Hitachi Ltd 不揮発性半導体記憶装置
JPH088313B2 (ja) * 1989-07-25 1996-01-29 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US5173436A (en) * 1989-11-21 1992-12-22 Texas Instruments Incorporated Method of manufacturing an EEPROM with trench-isolated bitlines
US5060195A (en) * 1989-12-29 1991-10-22 Texas Instruments Incorporated Hot electron programmable, tunnel electron erasable contactless EEPROM
JP2861582B2 (ja) * 1992-01-16 1999-02-24 日本電気株式会社 不揮発性半導体記憶装置の製造方法
US5231299A (en) * 1992-03-24 1993-07-27 International Business Machines Corporation Structure and fabrication method for EEPROM memory cell with selective channel implants
US5397725A (en) * 1993-10-28 1995-03-14 National Semiconductor Corporation Method of controlling oxide thinning in an EPROM or flash memory array
JP2956455B2 (ja) * 1993-11-17 1999-10-04 日本電気株式会社 半導体記憶装置の製造方法
JP3435786B2 (ja) * 1994-03-31 2003-08-11 株式会社日立製作所 不揮発性半導体記憶装置の製造方法
US5384272A (en) * 1994-06-28 1995-01-24 Advanced Micro Devices, Inc. Method for manufacturing a non-volatile, virtual ground memory element

Also Published As

Publication number Publication date
US5672529A (en) 1997-09-30
TW276349B (US07534539-20090519-C00280.png) 1996-05-21
US20010014502A1 (en) 2001-08-16
US6406958B2 (en) 2002-06-18
JPH07273231A (ja) 1995-10-20
KR950034788A (ko) 1995-12-28
US6211546B1 (en) 2001-04-03
KR100566416B1 (ko) 2006-03-31
KR100450828B1 (ko) 2004-12-04
US5932909A (en) 1999-08-03

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