JP3397809B2 - 半導体メモリセルの製造方法 - Google Patents
半導体メモリセルの製造方法Info
- Publication number
- JP3397809B2 JP3397809B2 JP26481492A JP26481492A JP3397809B2 JP 3397809 B2 JP3397809 B2 JP 3397809B2 JP 26481492 A JP26481492 A JP 26481492A JP 26481492 A JP26481492 A JP 26481492A JP 3397809 B2 JP3397809 B2 JP 3397809B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- connection hole
- deposited
- depositing
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 11
- 239000002184 metal Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000003990 capacitor Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002736 metal compounds Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
Landscapes
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910017726A KR950009741B1 (ko) | 1991-10-10 | 1991-10-10 | 반도체 메모리 셀의 제조방법 및 그 구조 |
| KR1991-17726 | 1991-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05218347A JPH05218347A (ja) | 1993-08-27 |
| JP3397809B2 true JP3397809B2 (ja) | 2003-04-21 |
Family
ID=19320988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26481492A Expired - Fee Related JP3397809B2 (ja) | 1991-10-10 | 1992-10-02 | 半導体メモリセルの製造方法 |
Country Status (5)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5563089A (en) * | 1994-07-20 | 1996-10-08 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
| US5605857A (en) * | 1993-02-12 | 1997-02-25 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
| JP2976842B2 (ja) * | 1995-04-20 | 1999-11-10 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
| US5580811A (en) * | 1995-05-03 | 1996-12-03 | Hyundai Electronics Industries Co., Ltd. | Method for the fabrication of a semiconductor memory device having a capacitor |
| JPH0917968A (ja) * | 1995-06-27 | 1997-01-17 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
| DE19624698C2 (de) * | 1995-06-27 | 2002-03-14 | Mitsubishi Electric Corp | Halbleiterspeichereinrichtung und Verfahren zur Herstellung einer Halbleiterspeichereinrichtung |
| US5554557A (en) * | 1996-02-02 | 1996-09-10 | Vanguard International Semiconductor Corp. | Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell |
| JP2800787B2 (ja) * | 1996-06-27 | 1998-09-21 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
| JPH10209393A (ja) * | 1997-01-22 | 1998-08-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP3120750B2 (ja) * | 1997-03-14 | 2000-12-25 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5989954A (en) * | 1998-03-05 | 1999-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a cylinder capacitor in the dram process |
| JP3144381B2 (ja) | 1998-05-19 | 2001-03-12 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5858829A (en) * | 1998-06-29 | 1999-01-12 | Vanguard International Semiconductor Corporation | Method for fabricating dynamic random access memory (DRAM) cells with minimum active cell areas using sidewall-spacer bit lines |
| US6218256B1 (en) | 1999-04-13 | 2001-04-17 | Micron Technology, Inc. | Electrode and capacitor structure for a semiconductor device and associated methods of manufacture |
| US6163047A (en) * | 1999-07-12 | 2000-12-19 | Vanguard International Semiconductor Corp. | Method of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cell |
| KR100330714B1 (ko) * | 1999-10-13 | 2002-04-03 | 윤종용 | 반도체 장치의 매몰 콘택 구조 및 그 형성방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180683A (en) * | 1988-06-10 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing stacked capacitor type semiconductor memory device |
| JP2703275B2 (ja) * | 1988-08-22 | 1998-01-26 | 株式会社日立製作所 | 半導体記憶装置 |
| JP2508300B2 (ja) * | 1988-12-08 | 1996-06-19 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5155057A (en) * | 1990-11-05 | 1992-10-13 | Micron Technology, Inc. | Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line |
-
1991
- 1991-10-10 KR KR1019910017726A patent/KR950009741B1/ko not_active Expired - Fee Related
-
1992
- 1992-09-30 DE DE4232817A patent/DE4232817B4/de not_active Expired - Fee Related
- 1992-10-02 JP JP26481492A patent/JP3397809B2/ja not_active Expired - Fee Related
- 1992-10-13 US US07/960,145 patent/US5409855A/en not_active Expired - Lifetime
- 1992-10-16 TW TW081108247A patent/TW229323B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| DE4232817B4 (de) | 2005-07-14 |
| KR950009741B1 (ko) | 1995-08-26 |
| TW229323B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-09-01 |
| DE4232817A1 (de) | 1993-04-15 |
| US5409855A (en) | 1995-04-25 |
| JPH05218347A (ja) | 1993-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |