JP3279615B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP3279615B2
JP3279615B2 JP01172792A JP1172792A JP3279615B2 JP 3279615 B2 JP3279615 B2 JP 3279615B2 JP 01172792 A JP01172792 A JP 01172792A JP 1172792 A JP1172792 A JP 1172792A JP 3279615 B2 JP3279615 B2 JP 3279615B2
Authority
JP
Japan
Prior art keywords
signal
potential
voltage
signal line
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01172792A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547179A (ja
Inventor
尊之 河原
健 阪田
清男 伊藤
武定 秋葉
五郎 橘川
良樹 川尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP01172792A priority Critical patent/JP3279615B2/ja
Priority to TW081102659A priority patent/TW224544B/zh
Priority to US07/865,852 priority patent/US5300839A/en
Priority to KR1019920006047A priority patent/KR100236875B1/ko
Publication of JPH0547179A publication Critical patent/JPH0547179A/ja
Priority to JP2000194889A priority patent/JP3382211B2/ja
Application granted granted Critical
Publication of JP3279615B2 publication Critical patent/JP3279615B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP01172792A 1991-04-15 1992-01-27 半導体装置 Expired - Fee Related JP3279615B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP01172792A JP3279615B2 (ja) 1991-04-15 1992-01-27 半導体装置
TW081102659A TW224544B (enExample) 1991-04-15 1992-04-07
US07/865,852 US5300839A (en) 1991-04-15 1992-04-09 Semiconductor IC device having sense amplifier circuit
KR1019920006047A KR100236875B1 (ko) 1991-04-15 1992-04-11 센스 앰프 회로를 갖는 반도체 ic 장치
JP2000194889A JP3382211B2 (ja) 1991-04-15 2000-06-23 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8222891 1991-04-15
JP3-82228 1991-04-15
JP01172792A JP3279615B2 (ja) 1991-04-15 1992-01-27 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000194889A Division JP3382211B2 (ja) 1991-04-15 2000-06-23 半導体装置

Publications (2)

Publication Number Publication Date
JPH0547179A JPH0547179A (ja) 1993-02-26
JP3279615B2 true JP3279615B2 (ja) 2002-04-30

Family

ID=26347231

Family Applications (2)

Application Number Title Priority Date Filing Date
JP01172792A Expired - Fee Related JP3279615B2 (ja) 1991-04-15 1992-01-27 半導体装置
JP2000194889A Expired - Fee Related JP3382211B2 (ja) 1991-04-15 2000-06-23 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2000194889A Expired - Fee Related JP3382211B2 (ja) 1991-04-15 2000-06-23 半導体装置

Country Status (4)

Country Link
US (1) US5300839A (enExample)
JP (2) JP3279615B2 (enExample)
KR (1) KR100236875B1 (enExample)
TW (1) TW224544B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2773624B2 (ja) * 1994-02-23 1998-07-09 日本電気株式会社 半導体記憶装置
JP3661162B2 (ja) * 1995-06-13 2005-06-15 三星電子株式会社 不揮発性半導体メモリ装置のセンスアンプ
US5661411A (en) * 1996-01-05 1997-08-26 Fujitsu Microelectronics, Inc. Feedback controlled load logic circuit
US5661691A (en) * 1996-05-23 1997-08-26 Vanguard International Semiconductor Corporation Simple layout low power data line sense amplifier design
JP3248468B2 (ja) * 1997-10-30 2002-01-21 日本電気株式会社 半導体記憶装置
US7414306B1 (en) 2002-12-12 2008-08-19 Marvell International Ltd. Preamplifier integrated circuit on flex circuit for magnetic media storing devices
JP2005243127A (ja) * 2004-02-25 2005-09-08 Sanyo Electric Co Ltd 紫外線消去型半導体メモリ装置
JP2005285291A (ja) * 2004-03-31 2005-10-13 Nec Corp センスアンプ回路及びその駆動方法並びに半導体装置
US7751218B2 (en) * 2006-07-14 2010-07-06 International Business Machines Corporation Self-referenced match-line sense amplifier for content addressable memories
US7724559B2 (en) * 2006-07-14 2010-05-25 International Business Machines Corporation Self-referenced match-line sense amplifier for content addressable memories
KR101053525B1 (ko) * 2009-06-30 2011-08-03 주식회사 하이닉스반도체 감지 증폭기 및 이를 이용한 반도체 집적회로
KR102562312B1 (ko) 2016-08-24 2023-08-01 삼성전자주식회사 비트라인 센스 앰프
KR102592794B1 (ko) * 2017-08-24 2023-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 감지 증폭기, 반도체 장치, 그 동작 방법, 및 전자 기기
TWI842855B (zh) 2019-03-29 2024-05-21 日商半導體能源研究所股份有限公司 半導體裝置
CN113791554B (zh) * 2021-08-25 2023-07-21 中国南方电网有限责任公司超高压输电公司昆明局 换流阀用阀控系统检测装置与方法
US11594264B1 (en) * 2021-11-15 2023-02-28 Ghangxin Memory Technologies, Inc. Readout circuit layout structure and method of reading data

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604534A (en) * 1984-12-03 1986-08-05 International Business Machines Corporation Highly sensitive high performance sense amplifiers
JPS62252597A (ja) * 1986-04-24 1987-11-04 Sony Corp センスアンプ
US4943944A (en) * 1987-11-25 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor memory using dynamic ram cells
JPH0727717B2 (ja) * 1988-07-13 1995-03-29 株式会社東芝 センス回路
JPH0762955B2 (ja) * 1989-05-15 1995-07-05 株式会社東芝 ダイナミック型ランダムアクセスメモリ

Also Published As

Publication number Publication date
KR100236875B1 (ko) 2000-01-15
JP3382211B2 (ja) 2003-03-04
JP2001043682A (ja) 2001-02-16
US5300839A (en) 1994-04-05
JPH0547179A (ja) 1993-02-26
KR920020497A (ko) 1992-11-21
TW224544B (enExample) 1994-06-01

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