JP3262623B2 - 減圧処理方法及び装置 - Google Patents
減圧処理方法及び装置Info
- Publication number
- JP3262623B2 JP3262623B2 JP05519493A JP5519493A JP3262623B2 JP 3262623 B2 JP3262623 B2 JP 3262623B2 JP 05519493 A JP05519493 A JP 05519493A JP 5519493 A JP5519493 A JP 5519493A JP 3262623 B2 JP3262623 B2 JP 3262623B2
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- valve
- exhaust passage
- passage
- processing unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000006837 decompression Effects 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 12
- 238000010926 purge Methods 0.000 claims description 13
- 238000003672 processing method Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 54
- 239000007789 gas Substances 0.000 description 29
- 239000012535 impurity Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05519493A JP3262623B2 (ja) | 1993-02-17 | 1993-02-17 | 減圧処理方法及び装置 |
| TW083101058A TW301018B (enExample) | 1993-02-17 | 1994-02-08 | |
| US08/197,873 US5415585A (en) | 1993-02-17 | 1994-02-17 | Decompression apparatus |
| KR1019940002850A KR100251876B1 (ko) | 1993-02-17 | 1994-02-17 | 감압 처리장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05519493A JP3262623B2 (ja) | 1993-02-17 | 1993-02-17 | 減圧処理方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06244125A JPH06244125A (ja) | 1994-09-02 |
| JP3262623B2 true JP3262623B2 (ja) | 2002-03-04 |
Family
ID=12991883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05519493A Expired - Fee Related JP3262623B2 (ja) | 1993-02-17 | 1993-02-17 | 減圧処理方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5415585A (enExample) |
| JP (1) | JP3262623B2 (enExample) |
| KR (1) | KR100251876B1 (enExample) |
| TW (1) | TW301018B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5900047A (en) * | 1997-11-26 | 1999-05-04 | Sony Corporation | Exhaust system for a semiconductor etcher that utilizes corrosive gas |
| KR100275738B1 (ko) * | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
| DE19906224B4 (de) * | 1999-02-15 | 2006-05-24 | Infineon Technologies Ag | Abzugsvorrichtung |
| JP3543949B2 (ja) * | 1999-11-09 | 2004-07-21 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP4038352B2 (ja) * | 2001-08-24 | 2008-01-23 | 株式会社日立産機システム | クリーンルーム |
| WO2005007283A2 (en) * | 2003-07-08 | 2005-01-27 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
| KR100718180B1 (ko) * | 2004-03-29 | 2007-05-15 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
| KR20060056709A (ko) * | 2004-11-22 | 2006-05-25 | 삼성전자주식회사 | 도어 입구에 에어 커튼을 가지는 반도체 제조 장비 |
| JP4675388B2 (ja) * | 2008-03-06 | 2011-04-20 | 東京エレクトロン株式会社 | 被処理体の処理装置 |
| JP4934117B2 (ja) * | 2008-09-03 | 2012-05-16 | 東京エレクトロン株式会社 | ガス処理装置、ガス処理方法、および記憶媒体 |
| JP5276679B2 (ja) * | 2011-02-01 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置 |
| JP5921168B2 (ja) | 2011-11-29 | 2016-05-24 | 株式会社日立国際電気 | 基板処理装置 |
| US20160053377A1 (en) * | 2013-03-25 | 2016-02-25 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and substrate processing method |
| JP6667412B2 (ja) * | 2016-09-30 | 2020-03-18 | 東京エレクトロン株式会社 | 基板処理装置 |
| CN112349623B (zh) * | 2019-08-06 | 2024-11-29 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法和计算机可读取记录介质 |
| KR102803036B1 (ko) * | 2019-08-29 | 2025-05-12 | 삼성전자주식회사 | 플라즈마 표면처리 장치 및 이를 구비하는 기판 처리 시스템과 이를 이용한 플라즈마 표면처리 방법 |
| KR102843100B1 (ko) * | 2019-09-19 | 2025-08-05 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 기판 처리 방법, 반도체 장치의 제조 방법 및 프로그램 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0114000Y2 (enExample) * | 1987-01-30 | 1989-04-24 | ||
| JPH02273921A (ja) * | 1989-04-17 | 1990-11-08 | Tokyo Electron Ltd | 真空処理装置及びプラズマ処理方法 |
| JP3149206B2 (ja) * | 1991-05-30 | 2001-03-26 | 東京エレクトロン株式会社 | 熱処理装置 |
-
1993
- 1993-02-17 JP JP05519493A patent/JP3262623B2/ja not_active Expired - Fee Related
-
1994
- 1994-02-08 TW TW083101058A patent/TW301018B/zh not_active IP Right Cessation
- 1994-02-17 US US08/197,873 patent/US5415585A/en not_active Expired - Lifetime
- 1994-02-17 KR KR1019940002850A patent/KR100251876B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW301018B (enExample) | 1997-03-21 |
| JPH06244125A (ja) | 1994-09-02 |
| KR100251876B1 (ko) | 2000-04-15 |
| US5415585A (en) | 1995-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20011204 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101221 Year of fee payment: 9 |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121221 Year of fee payment: 11 |
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| LAPS | Cancellation because of no payment of annual fees |