KR100251876B1 - 감압 처리장치 - Google Patents

감압 처리장치 Download PDF

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Publication number
KR100251876B1
KR100251876B1 KR1019940002850A KR19940002850A KR100251876B1 KR 100251876 B1 KR100251876 B1 KR 100251876B1 KR 1019940002850 A KR1019940002850 A KR 1019940002850A KR 19940002850 A KR19940002850 A KR 19940002850A KR 100251876 B1 KR100251876 B1 KR 100251876B1
Authority
KR
South Korea
Prior art keywords
exhaust
pressure
exhaust pipe
processing
processing unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940002850A
Other languages
English (en)
Korean (ko)
Inventor
미야기카쓰신
Original Assignee
마쓰바 구니유키
도오교오에레구토론도오호쿠가부시끼가이샤
히가시 데쓰로
동경 엘렉트론주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쓰바 구니유키, 도오교오에레구토론도오호쿠가부시끼가이샤, 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 마쓰바 구니유키
Application granted granted Critical
Publication of KR100251876B1 publication Critical patent/KR100251876B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1019940002850A 1993-02-17 1994-02-17 감압 처리장치 Expired - Lifetime KR100251876B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-55194 1993-02-17
JP05519493A JP3262623B2 (ja) 1993-02-17 1993-02-17 減圧処理方法及び装置

Publications (1)

Publication Number Publication Date
KR100251876B1 true KR100251876B1 (ko) 2000-04-15

Family

ID=12991883

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002850A Expired - Lifetime KR100251876B1 (ko) 1993-02-17 1994-02-17 감압 처리장치

Country Status (4)

Country Link
US (1) US5415585A (enExample)
JP (1) JP3262623B2 (enExample)
KR (1) KR100251876B1 (enExample)
TW (1) TW301018B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101576322B1 (ko) * 2011-02-01 2015-12-09 도쿄엘렉트론가부시키가이샤 성막 장치
KR20220046661A (ko) * 2019-09-19 2022-04-14 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 처리 방법, 반도체 장치의 제조 방법 및 프로그램
KR20230130596A (ko) * 2019-08-06 2023-09-12 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900047A (en) * 1997-11-26 1999-05-04 Sony Corporation Exhaust system for a semiconductor etcher that utilizes corrosive gas
KR100275738B1 (ko) * 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
DE19906224B4 (de) * 1999-02-15 2006-05-24 Infineon Technologies Ag Abzugsvorrichtung
JP3543949B2 (ja) * 1999-11-09 2004-07-21 東京エレクトロン株式会社 熱処理装置
JP4038352B2 (ja) * 2001-08-24 2008-01-23 株式会社日立産機システム クリーンルーム
WO2005007283A2 (en) * 2003-07-08 2005-01-27 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
KR100718180B1 (ko) * 2004-03-29 2007-05-15 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
KR20060056709A (ko) * 2004-11-22 2006-05-25 삼성전자주식회사 도어 입구에 에어 커튼을 가지는 반도체 제조 장비
JP4675388B2 (ja) * 2008-03-06 2011-04-20 東京エレクトロン株式会社 被処理体の処理装置
JP4934117B2 (ja) * 2008-09-03 2012-05-16 東京エレクトロン株式会社 ガス処理装置、ガス処理方法、および記憶媒体
JP5921168B2 (ja) 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
US20160053377A1 (en) * 2013-03-25 2016-02-25 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and substrate processing method
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
KR102803036B1 (ko) * 2019-08-29 2025-05-12 삼성전자주식회사 플라즈마 표면처리 장치 및 이를 구비하는 기판 처리 시스템과 이를 이용한 플라즈마 표면처리 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0114000Y2 (enExample) * 1987-01-30 1989-04-24
JPH02273921A (ja) * 1989-04-17 1990-11-08 Tokyo Electron Ltd 真空処理装置及びプラズマ処理方法
JP3149206B2 (ja) * 1991-05-30 2001-03-26 東京エレクトロン株式会社 熱処理装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101576322B1 (ko) * 2011-02-01 2015-12-09 도쿄엘렉트론가부시키가이샤 성막 장치
KR20230130596A (ko) * 2019-08-06 2023-09-12 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US11846025B2 (en) 2019-08-06 2023-12-19 Kokusai Electric Corporation Substrate processing apparatus capable of adjusting inner pressure of process chamber thereof and method therefor
KR102745428B1 (ko) * 2019-08-06 2024-12-19 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
KR20220046661A (ko) * 2019-09-19 2022-04-14 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 처리 방법, 반도체 장치의 제조 방법 및 프로그램
KR102843100B1 (ko) 2019-09-19 2025-08-05 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 처리 방법, 반도체 장치의 제조 방법 및 프로그램

Also Published As

Publication number Publication date
TW301018B (enExample) 1997-03-21
JPH06244125A (ja) 1994-09-02
JP3262623B2 (ja) 2002-03-04
US5415585A (en) 1995-05-16

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