JP3254703B2 - 集積回路装置およびその製造方法 - Google Patents

集積回路装置およびその製造方法

Info

Publication number
JP3254703B2
JP3254703B2 JP32776691A JP32776691A JP3254703B2 JP 3254703 B2 JP3254703 B2 JP 3254703B2 JP 32776691 A JP32776691 A JP 32776691A JP 32776691 A JP32776691 A JP 32776691A JP 3254703 B2 JP3254703 B2 JP 3254703B2
Authority
JP
Japan
Prior art keywords
layer
lower electrode
noble metal
titanium
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32776691A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04287968A (ja
Inventor
ジェー・シュール ポール
リー・キャマデイナー
エル・ラーソン ウィリアム
ディ・トレイナー スティーブ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of JPH04287968A publication Critical patent/JPH04287968A/ja
Application granted granted Critical
Publication of JP3254703B2 publication Critical patent/JP3254703B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP32776691A 1990-12-11 1991-12-11 集積回路装置およびその製造方法 Expired - Lifetime JP3254703B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62555590A 1990-12-11 1990-12-11
US625,555 1990-12-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2001244303A Division JP2002064188A (ja) 1990-12-11 2001-08-10 集積回路記憶装置

Publications (2)

Publication Number Publication Date
JPH04287968A JPH04287968A (ja) 1992-10-13
JP3254703B2 true JP3254703B2 (ja) 2002-02-12

Family

ID=24506629

Family Applications (2)

Application Number Title Priority Date Filing Date
JP32776691A Expired - Lifetime JP3254703B2 (ja) 1990-12-11 1991-12-11 集積回路装置およびその製造方法
JP2001244303A Pending JP2002064188A (ja) 1990-12-11 2001-08-10 集積回路記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2001244303A Pending JP2002064188A (ja) 1990-12-11 2001-08-10 集積回路記憶装置

Country Status (4)

Country Link
EP (1) EP0490288A3 (enExample)
JP (2) JP3254703B2 (enExample)
KR (1) KR100264368B1 (enExample)
TW (1) TW222348B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100269278B1 (ko) * 1992-10-14 2000-10-16 윤종용 강유전체박막을이용한커패시터제조방법
EP0737364B1 (en) * 1994-10-04 1999-03-31 Koninklijke Philips Electronics N.V. Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법
KR100393197B1 (ko) * 1996-10-31 2003-11-01 삼성전자주식회사 강유전체캐패시터및그제조방법
JPH10200072A (ja) * 1997-01-10 1998-07-31 Sony Corp 半導体メモリセルのキャパシタ構造及びその作製方法
JP2004241632A (ja) * 2003-02-06 2004-08-26 Seiko Epson Corp 強誘電体メモリおよびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437139A (en) * 1982-12-17 1984-03-13 International Business Machines Corporation Laser annealed dielectric for dual dielectric capacitor
JPH02189969A (ja) * 1989-01-18 1990-07-25 Toshiba Corp 電子部品
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
EP0396221B1 (en) * 1989-05-05 1995-09-27 Ramtron International Corporation Integrated ferroelectric capacitor

Also Published As

Publication number Publication date
EP0490288A2 (en) 1992-06-17
JP2002064188A (ja) 2002-02-28
TW222348B (enExample) 1994-04-11
KR920013712A (ko) 1992-07-29
JPH04287968A (ja) 1992-10-13
EP0490288A3 (en) 1992-09-02
KR100264368B1 (ko) 2000-08-16

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