KR100264368B1 - 집적회로 메모리 엘레멘트가 되는 pzt 캐패시터 및 그의 제조방법 - Google Patents

집적회로 메모리 엘레멘트가 되는 pzt 캐패시터 및 그의 제조방법 Download PDF

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Publication number
KR100264368B1
KR100264368B1 KR1019910022573A KR910022573A KR100264368B1 KR 100264368 B1 KR100264368 B1 KR 100264368B1 KR 1019910022573 A KR1019910022573 A KR 1019910022573A KR 910022573 A KR910022573 A KR 910022573A KR 100264368 B1 KR100264368 B1 KR 100264368B1
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KR
South Korea
Prior art keywords
layer
metal
titanium
platinum
palladium
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019910022573A
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English (en)
Korean (ko)
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KR920013712A (ko
Inventor
캄머디너 리
엘. 라손 월리암
디. 트레이너 스티브
쉬이에레 포울제이.
Original Assignee
야스카와 히데아키
세이코 엡슨 가부시키가이샤
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Publication of KR920013712A publication Critical patent/KR920013712A/ko
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Publication of KR100264368B1 publication Critical patent/KR100264368B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019910022573A 1990-12-11 1991-12-10 집적회로 메모리 엘레멘트가 되는 pzt 캐패시터 및 그의 제조방법 Expired - Lifetime KR100264368B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62555590A 1990-12-11 1990-12-11
US7/625,555 1990-12-11

Publications (2)

Publication Number Publication Date
KR920013712A KR920013712A (ko) 1992-07-29
KR100264368B1 true KR100264368B1 (ko) 2000-08-16

Family

ID=24506629

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910022573A Expired - Lifetime KR100264368B1 (ko) 1990-12-11 1991-12-10 집적회로 메모리 엘레멘트가 되는 pzt 캐패시터 및 그의 제조방법

Country Status (4)

Country Link
EP (1) EP0490288A3 (enExample)
JP (2) JP3254703B2 (enExample)
KR (1) KR100264368B1 (enExample)
TW (1) TW222348B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100269278B1 (ko) * 1992-10-14 2000-10-16 윤종용 강유전체박막을이용한커패시터제조방법
EP0737364B1 (en) * 1994-10-04 1999-03-31 Koninklijke Philips Electronics N.V. Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법
KR100393197B1 (ko) * 1996-10-31 2003-11-01 삼성전자주식회사 강유전체캐패시터및그제조방법
JPH10200072A (ja) * 1997-01-10 1998-07-31 Sony Corp 半導体メモリセルのキャパシタ構造及びその作製方法
JP2004241632A (ja) * 2003-02-06 2004-08-26 Seiko Epson Corp 強誘電体メモリおよびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02189969A (ja) * 1989-01-18 1990-07-25 Toshiba Corp 電子部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437139A (en) * 1982-12-17 1984-03-13 International Business Machines Corporation Laser annealed dielectric for dual dielectric capacitor
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
EP0396221B1 (en) * 1989-05-05 1995-09-27 Ramtron International Corporation Integrated ferroelectric capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02189969A (ja) * 1989-01-18 1990-07-25 Toshiba Corp 電子部品

Also Published As

Publication number Publication date
JP3254703B2 (ja) 2002-02-12
EP0490288A2 (en) 1992-06-17
JP2002064188A (ja) 2002-02-28
TW222348B (enExample) 1994-04-11
KR920013712A (ko) 1992-07-29
JPH04287968A (ja) 1992-10-13
EP0490288A3 (en) 1992-09-02

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