TW222348B - - Google Patents
Info
- Publication number
- TW222348B TW222348B TW080110268A TW80110268A TW222348B TW 222348 B TW222348 B TW 222348B TW 080110268 A TW080110268 A TW 080110268A TW 80110268 A TW80110268 A TW 80110268A TW 222348 B TW222348 B TW 222348B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62555590A | 1990-12-11 | 1990-12-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW222348B true TW222348B (enExample) | 1994-04-11 |
Family
ID=24506629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW080110268A TW222348B (enExample) | 1990-12-11 | 1991-12-30 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0490288A3 (enExample) |
| JP (2) | JP3254703B2 (enExample) |
| KR (1) | KR100264368B1 (enExample) |
| TW (1) | TW222348B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100269278B1 (ko) * | 1992-10-14 | 2000-10-16 | 윤종용 | 강유전체박막을이용한커패시터제조방법 |
| EP0737364B1 (en) * | 1994-10-04 | 1999-03-31 | Koninklijke Philips Electronics N.V. | Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
| US5708302A (en) * | 1995-04-26 | 1998-01-13 | Symetrix Corporation | Bottom electrode structure for dielectric capacitors |
| KR100200299B1 (ko) * | 1995-11-30 | 1999-06-15 | 김영환 | 반도체 소자 캐패시터 형성방법 |
| KR100393197B1 (ko) * | 1996-10-31 | 2003-11-01 | 삼성전자주식회사 | 강유전체캐패시터및그제조방법 |
| JPH10200072A (ja) * | 1997-01-10 | 1998-07-31 | Sony Corp | 半導体メモリセルのキャパシタ構造及びその作製方法 |
| JP2004241632A (ja) * | 2003-02-06 | 2004-08-26 | Seiko Epson Corp | 強誘電体メモリおよびその製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4437139A (en) * | 1982-12-17 | 1984-03-13 | International Business Machines Corporation | Laser annealed dielectric for dual dielectric capacitor |
| JPH02189969A (ja) * | 1989-01-18 | 1990-07-25 | Toshiba Corp | 電子部品 |
| KR940006708B1 (ko) * | 1989-01-26 | 1994-07-25 | 세이꼬 엡슨 가부시끼가이샤 | 반도체 장치의 제조 방법 |
| EP0396221B1 (en) * | 1989-05-05 | 1995-09-27 | Ramtron International Corporation | Integrated ferroelectric capacitor |
-
1991
- 1991-12-06 EP EP19910120962 patent/EP0490288A3/en not_active Withdrawn
- 1991-12-10 KR KR1019910022573A patent/KR100264368B1/ko not_active Expired - Lifetime
- 1991-12-11 JP JP32776691A patent/JP3254703B2/ja not_active Expired - Lifetime
- 1991-12-30 TW TW080110268A patent/TW222348B/zh active
-
2001
- 2001-08-10 JP JP2001244303A patent/JP2002064188A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP3254703B2 (ja) | 2002-02-12 |
| EP0490288A2 (en) | 1992-06-17 |
| JP2002064188A (ja) | 2002-02-28 |
| KR920013712A (ko) | 1992-07-29 |
| JPH04287968A (ja) | 1992-10-13 |
| EP0490288A3 (en) | 1992-09-02 |
| KR100264368B1 (ko) | 2000-08-16 |