JP3233935B2 - コンデンサ電極とｍｏｓトランジスタのソース／ドレイン領域との間に接触を製造するための方法 - Google Patents
コンデンサ電極とｍｏｓトランジスタのソース／ドレイン領域との間に接触を製造するための方法Info
- Publication number
- JP3233935B2 JP3233935B2 JP51356193A JP51356193A JP3233935B2 JP 3233935 B2 JP3233935 B2 JP 3233935B2 JP 51356193 A JP51356193 A JP 51356193A JP 51356193 A JP51356193 A JP 51356193A JP 3233935 B2 JP3233935 B2 JP 3233935B2
- Authority
- JP
- Japan
- Prior art keywords
- trench
- layer
- substrate
- sio
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 36
- 125000006850 spacer group Chemical group 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 38
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- LNYQYQFDAYWLAM-UHFFFAOYSA-N BSCC Chemical compound BSCC LNYQYQFDAYWLAM-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204298A DE4204298C1 (enExample) | 1992-02-13 | 1992-02-13 | |
| DE4204298.4 | 1992-02-13 | ||
| PCT/DE1993/000078 WO1993016490A1 (de) | 1992-02-13 | 1993-02-01 | Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07503811A JPH07503811A (ja) | 1995-04-20 |
| JP3233935B2 true JP3233935B2 (ja) | 2001-12-04 |
Family
ID=6451626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51356193A Expired - Fee Related JP3233935B2 (ja) | 1992-02-13 | 1993-02-01 | コンデンサ電極とｍｏｓトランジスタのソース／ドレイン領域との間に接触を製造するための方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5432115A (enExample) |
| EP (1) | EP0626098B1 (enExample) |
| JP (1) | JP3233935B2 (enExample) |
| KR (1) | KR100252329B1 (enExample) |
| AT (1) | ATE139059T1 (enExample) |
| DE (2) | DE4204298C1 (enExample) |
| HK (1) | HK1000927A1 (enExample) |
| TW (1) | TW238406B (enExample) |
| WO (1) | WO1993016490A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6025260A (en) | 1998-02-05 | 2000-02-15 | Integrated Device Technology, Inc. | Method for fabricating air gap with borderless contact |
| US10672810B2 (en) * | 2017-10-31 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor with shallow trench edge doping |
| DE102018125019A1 (de) | 2017-10-31 | 2019-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS-Bildsensor mit Shallow-Trench-Rand-Dotierung |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5963757A (ja) * | 1982-10-04 | 1984-04-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| JPS61258468A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
| JPS62247560A (ja) * | 1986-04-18 | 1987-10-28 | Fujitsu Ltd | ダイナミツクランダムアクセスメモリセル |
| JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
| JPS63260163A (ja) * | 1987-04-17 | 1988-10-27 | Oki Electric Ind Co Ltd | 半導体記憶装置の製造方法 |
| KR910008830B1 (ko) * | 1988-08-18 | 1991-10-21 | 현대전자산업 주식회사 | 산화물벽과 질화물벽을 이용한 트렌치 측면벽 도핑방법 및 그 반도체 소자 |
| EP0399060B1 (de) * | 1989-05-22 | 1995-05-24 | Siemens Aktiengesellschaft | Halbleiterspeicheranordnung mit Kondensatoren mir zwei in einem Graben angeordneten Elektroden und Verfahren zu deren Herstellung |
| DE59205665D1 (de) * | 1991-10-02 | 1996-04-18 | Siemens Ag | Verfahren zur Herstellung einer Grabenstruktur in einem Substrat |
| JPH06345868A (ja) * | 1993-06-03 | 1994-12-20 | Shin Etsu Chem Co Ltd | ポリイミド及びその製造方法 |
-
1992
- 1992-02-13 DE DE4204298A patent/DE4204298C1/de not_active Expired - Fee Related
-
1993
- 1993-02-01 KR KR1019940702776A patent/KR100252329B1/ko not_active Expired - Fee Related
- 1993-02-01 HK HK97102494A patent/HK1000927A1/xx not_active IP Right Cessation
- 1993-02-01 EP EP93902067A patent/EP0626098B1/de not_active Expired - Lifetime
- 1993-02-01 WO PCT/DE1993/000078 patent/WO1993016490A1/de not_active Ceased
- 1993-02-01 DE DE59302829T patent/DE59302829D1/de not_active Expired - Fee Related
- 1993-02-01 US US08/284,502 patent/US5432115A/en not_active Expired - Lifetime
- 1993-02-01 JP JP51356193A patent/JP3233935B2/ja not_active Expired - Fee Related
- 1993-02-01 AT AT93902067T patent/ATE139059T1/de not_active IP Right Cessation
- 1993-02-13 TW TW082101022A patent/TW238406B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0626098A1 (de) | 1994-11-30 |
| JPH07503811A (ja) | 1995-04-20 |
| DE4204298C1 (enExample) | 1993-03-04 |
| EP0626098B1 (de) | 1996-06-05 |
| KR100252329B1 (ko) | 2000-04-15 |
| ATE139059T1 (de) | 1996-06-15 |
| WO1993016490A1 (de) | 1993-08-19 |
| KR950700609A (ko) | 1995-01-16 |
| DE59302829D1 (de) | 1996-07-11 |
| HK1000927A1 (en) | 1998-05-08 |
| US5432115A (en) | 1995-07-11 |
| TW238406B (enExample) | 1995-01-11 |
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Legal Events
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| LAPS | Cancellation because of no payment of annual fees |