KR100252329B1 - 트렌치내부에배치된캐패시터전극및트렌치외부에배치된mos트랜지스터소스/드레인영역간의접촉형성방법 - Google Patents

트렌치내부에배치된캐패시터전극및트렌치외부에배치된mos트랜지스터소스/드레인영역간의접촉형성방법 Download PDF

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Publication number
KR100252329B1
KR100252329B1 KR1019940702776A KR19940702776A KR100252329B1 KR 100252329 B1 KR100252329 B1 KR 100252329B1 KR 1019940702776 A KR1019940702776 A KR 1019940702776A KR 19940702776 A KR19940702776 A KR 19940702776A KR 100252329 B1 KR100252329 B1 KR 100252329B1
Authority
KR
South Korea
Prior art keywords
trench
layer
sio
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940702776A
Other languages
English (en)
Korean (ko)
Other versions
KR950700609A (ko
Inventor
볼프강 뢰즈너
플란쯔 호프만
로타르 리쉬
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR950700609A publication Critical patent/KR950700609A/ko
Application granted granted Critical
Publication of KR100252329B1 publication Critical patent/KR100252329B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019940702776A 1992-02-13 1993-02-01 트렌치내부에배치된캐패시터전극및트렌치외부에배치된mos트랜지스터소스/드레인영역간의접촉형성방법 Expired - Fee Related KR100252329B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4204298A DE4204298C1 (enExample) 1992-02-13 1992-02-13
DEP4204298.4 1992-02-13
PCT/DE1993/000078 WO1993016490A1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode

Publications (2)

Publication Number Publication Date
KR950700609A KR950700609A (ko) 1995-01-16
KR100252329B1 true KR100252329B1 (ko) 2000-04-15

Family

ID=6451626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940702776A Expired - Fee Related KR100252329B1 (ko) 1992-02-13 1993-02-01 트렌치내부에배치된캐패시터전극및트렌치외부에배치된mos트랜지스터소스/드레인영역간의접촉형성방법

Country Status (9)

Country Link
US (1) US5432115A (enExample)
EP (1) EP0626098B1 (enExample)
JP (1) JP3233935B2 (enExample)
KR (1) KR100252329B1 (enExample)
AT (1) ATE139059T1 (enExample)
DE (2) DE4204298C1 (enExample)
HK (1) HK1000927A1 (enExample)
TW (1) TW238406B (enExample)
WO (1) WO1993016490A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025260A (en) 1998-02-05 2000-02-15 Integrated Device Technology, Inc. Method for fabricating air gap with borderless contact
US10672810B2 (en) * 2017-10-31 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor with shallow trench edge doping
DE102018125019A1 (de) 2017-10-31 2019-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS-Bildsensor mit Shallow-Trench-Rand-Dotierung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963757A (ja) * 1982-10-04 1984-04-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS62247560A (ja) * 1986-04-18 1987-10-28 Fujitsu Ltd ダイナミツクランダムアクセスメモリセル
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
JPS63260163A (ja) * 1987-04-17 1988-10-27 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
KR910008830B1 (ko) * 1988-08-18 1991-10-21 현대전자산업 주식회사 산화물벽과 질화물벽을 이용한 트렌치 측면벽 도핑방법 및 그 반도체 소자
ATE123174T1 (de) * 1989-05-22 1995-06-15 Siemens Ag Halbleiterspeicheranordnung mit kondensatoren mir zwei in einem graben angeordneten elektroden und verfahren zu deren herstellung.
DE59205665D1 (de) * 1991-10-02 1996-04-18 Siemens Ag Verfahren zur Herstellung einer Grabenstruktur in einem Substrat
JPH06345868A (ja) * 1993-06-03 1994-12-20 Shin Etsu Chem Co Ltd ポリイミド及びその製造方法

Also Published As

Publication number Publication date
WO1993016490A1 (de) 1993-08-19
EP0626098B1 (de) 1996-06-05
ATE139059T1 (de) 1996-06-15
EP0626098A1 (de) 1994-11-30
JPH07503811A (ja) 1995-04-20
TW238406B (enExample) 1995-01-11
US5432115A (en) 1995-07-11
DE4204298C1 (enExample) 1993-03-04
DE59302829D1 (de) 1996-07-11
HK1000927A1 (en) 1998-05-08
JP3233935B2 (ja) 2001-12-04
KR950700609A (ko) 1995-01-16

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