DE4204298C1 - - Google Patents

Info

Publication number
DE4204298C1
DE4204298C1 DE4204298A DE4204298A DE4204298C1 DE 4204298 C1 DE4204298 C1 DE 4204298C1 DE 4204298 A DE4204298 A DE 4204298A DE 4204298 A DE4204298 A DE 4204298A DE 4204298 C1 DE4204298 C1 DE 4204298C1
Authority
DE
Germany
Prior art keywords
layer
trench
substrate
sio
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4204298A
Other languages
German (de)
English (en)
Inventor
Wolfgang Dr. 8014 Neubiberg De Roesner
Franz Dr. 8000 Muenchen De Hofmann
Lothar Dr. 8014 Neubiberg De Risch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE4204298A priority Critical patent/DE4204298C1/de
Application filed by Siemens AG filed Critical Siemens AG
Priority to HK97102494.1A priority patent/HK1000927B/xx
Priority to AT93902067T priority patent/ATE139059T1/de
Priority to US08/284,502 priority patent/US5432115A/en
Priority to PCT/DE1993/000078 priority patent/WO1993016490A1/de
Priority to EP93902067A priority patent/EP0626098B1/de
Priority to JP51356193A priority patent/JP3233935B2/ja
Priority to DE59302829T priority patent/DE59302829D1/de
Priority to KR1019940702776A priority patent/KR100252329B1/ko
Priority to TW082101022A priority patent/TW238406B/zh
Application granted granted Critical
Publication of DE4204298C1 publication Critical patent/DE4204298C1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
DE4204298A 1992-02-13 1992-02-13 Expired - Fee Related DE4204298C1 (enExample)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE4204298A DE4204298C1 (enExample) 1992-02-13 1992-02-13
AT93902067T ATE139059T1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode
US08/284,502 US5432115A (en) 1992-02-13 1993-02-01 Process for making a contact betwen a capacitor electrode disposed in a trench and an MOS transistor source/drain region disposed outside the trench
PCT/DE1993/000078 WO1993016490A1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode
HK97102494.1A HK1000927B (en) 1992-02-13 1993-02-01 Method of producing a contact with a trench-condenser electrode
EP93902067A EP0626098B1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode
JP51356193A JP3233935B2 (ja) 1992-02-13 1993-02-01 コンデンサ電極とｍｏｓトランジスタのソース／ドレイン領域との間に接触を製造するための方法
DE59302829T DE59302829D1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode
KR1019940702776A KR100252329B1 (ko) 1992-02-13 1993-02-01 트렌치내부에배치된캐패시터전극및트렌치외부에배치된mos트랜지스터소스/드레인영역간의접촉형성방법
TW082101022A TW238406B (enExample) 1992-02-13 1993-02-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4204298A DE4204298C1 (enExample) 1992-02-13 1992-02-13

Publications (1)

Publication Number Publication Date
DE4204298C1 true DE4204298C1 (enExample) 1993-03-04

Family

ID=6451626

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4204298A Expired - Fee Related DE4204298C1 (enExample) 1992-02-13 1992-02-13
DE59302829T Expired - Fee Related DE59302829D1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59302829T Expired - Fee Related DE59302829D1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode

Country Status (8)

Country Link
US (1) US5432115A (enExample)
EP (1) EP0626098B1 (enExample)
JP (1) JP3233935B2 (enExample)
KR (1) KR100252329B1 (enExample)
AT (1) ATE139059T1 (enExample)
DE (2) DE4204298C1 (enExample)
TW (1) TW238406B (enExample)
WO (1) WO1993016490A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200212093A1 (en) * 2017-10-31 2020-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with shallow trench edge doping
US12113079B2 (en) 2017-10-31 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with shallow trench edge doping

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025260A (en) 1998-02-05 2000-02-15 Integrated Device Technology, Inc. Method for fabricating air gap with borderless contact

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399060A1 (de) * 1989-05-22 1990-11-28 Siemens Aktiengesellschaft Halbleiterspeicheranordnung mit Kondensatoren mir zwei in einem Graben angeordneten Elektroden und Verfahren zu deren Herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963757A (ja) * 1982-10-04 1984-04-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS62247560A (ja) * 1986-04-18 1987-10-28 Fujitsu Ltd ダイナミツクランダムアクセスメモリセル
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
JPS63260163A (ja) * 1987-04-17 1988-10-27 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
KR910008830B1 (ko) * 1988-08-18 1991-10-21 현대전자산업 주식회사 산화물벽과 질화물벽을 이용한 트렌치 측면벽 도핑방법 및 그 반도체 소자
DE59205665D1 (de) * 1991-10-02 1996-04-18 Siemens Ag Verfahren zur Herstellung einer Grabenstruktur in einem Substrat
JPH06345868A (ja) * 1993-06-03 1994-12-20 Shin Etsu Chem Co Ltd ポリイミド及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399060A1 (de) * 1989-05-22 1990-11-28 Siemens Aktiengesellschaft Halbleiterspeicheranordnung mit Kondensatoren mir zwei in einem Graben angeordneten Elektroden und Verfahren zu deren Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ESSDERC 90, S. 465-468 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200212093A1 (en) * 2017-10-31 2020-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with shallow trench edge doping
US20200258925A1 (en) * 2017-10-31 2020-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with shallow trench edge doping
US10998359B2 (en) * 2017-10-31 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with shallow trench edge doping
US10998360B2 (en) * 2017-10-31 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with shallow trench edge doping
US11735609B2 (en) 2017-10-31 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with shallow trench edge doping
US12113079B2 (en) 2017-10-31 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with shallow trench edge doping

Also Published As

Publication number Publication date
HK1000927A1 (en) 1998-05-08
ATE139059T1 (de) 1996-06-15
JPH07503811A (ja) 1995-04-20
EP0626098A1 (de) 1994-11-30
JP3233935B2 (ja) 2001-12-04
KR950700609A (ko) 1995-01-16
DE59302829D1 (de) 1996-07-11
TW238406B (enExample) 1995-01-11
EP0626098B1 (de) 1996-06-05
WO1993016490A1 (de) 1993-08-19
US5432115A (en) 1995-07-11
KR100252329B1 (ko) 2000-04-15

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DE4204298C1 (enExample)
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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee