HK1000927A1 - Method of producing a contact with a trench-condenser electrode - Google Patents

Method of producing a contact with a trench-condenser electrode Download PDF

Info

Publication number
HK1000927A1
HK1000927A1 HK97102494A HK97102494A HK1000927A1 HK 1000927 A1 HK1000927 A1 HK 1000927A1 HK 97102494 A HK97102494 A HK 97102494A HK 97102494 A HK97102494 A HK 97102494A HK 1000927 A1 HK1000927 A1 HK 1000927A1
Authority
HK
Hong Kong
Prior art keywords
trench
layer
substrate
etching
mask
Prior art date
Application number
HK97102494A
Other languages
German (de)
English (en)
French (fr)
Chinese (zh)
Other versions
HK1000927B (en
Inventor
Roesner Wolfgang
Hofmann Franz
Risch Lothar
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of HK1000927B publication Critical patent/HK1000927B/xx
Publication of HK1000927A1 publication Critical patent/HK1000927A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
HK97102494A 1992-02-13 1993-02-01 Method of producing a contact with a trench-condenser electrode HK1000927A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4204298A DE4204298C1 (enExample) 1992-02-13 1992-02-13
DE4204298 1992-02-13
PCT/DE1993/000078 WO1993016490A1 (de) 1992-02-13 1993-02-01 Verfahren zur herstellung eines kontaktes zu einer grabenkondensatorelektrode

Publications (2)

Publication Number Publication Date
HK1000927B HK1000927B (en) 1998-05-08
HK1000927A1 true HK1000927A1 (en) 1998-05-08

Family

ID=6451626

Family Applications (1)

Application Number Title Priority Date Filing Date
HK97102494A HK1000927A1 (en) 1992-02-13 1993-02-01 Method of producing a contact with a trench-condenser electrode

Country Status (9)

Country Link
US (1) US5432115A (enExample)
EP (1) EP0626098B1 (enExample)
JP (1) JP3233935B2 (enExample)
KR (1) KR100252329B1 (enExample)
AT (1) ATE139059T1 (enExample)
DE (2) DE4204298C1 (enExample)
HK (1) HK1000927A1 (enExample)
TW (1) TW238406B (enExample)
WO (1) WO1993016490A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025260A (en) 1998-02-05 2000-02-15 Integrated Device Technology, Inc. Method for fabricating air gap with borderless contact
US10672810B2 (en) * 2017-10-31 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor with shallow trench edge doping
DE102018125019A1 (de) 2017-10-31 2019-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS-Bildsensor mit Shallow-Trench-Rand-Dotierung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963757A (ja) * 1982-10-04 1984-04-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS62247560A (ja) * 1986-04-18 1987-10-28 Fujitsu Ltd ダイナミツクランダムアクセスメモリセル
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
JPS63260163A (ja) * 1987-04-17 1988-10-27 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
KR910008830B1 (ko) * 1988-08-18 1991-10-21 현대전자산업 주식회사 산화물벽과 질화물벽을 이용한 트렌치 측면벽 도핑방법 및 그 반도체 소자
ATE123174T1 (de) * 1989-05-22 1995-06-15 Siemens Ag Halbleiterspeicheranordnung mit kondensatoren mir zwei in einem graben angeordneten elektroden und verfahren zu deren herstellung.
DE59205665D1 (de) * 1991-10-02 1996-04-18 Siemens Ag Verfahren zur Herstellung einer Grabenstruktur in einem Substrat
JPH06345868A (ja) * 1993-06-03 1994-12-20 Shin Etsu Chem Co Ltd ポリイミド及びその製造方法

Also Published As

Publication number Publication date
KR100252329B1 (ko) 2000-04-15
WO1993016490A1 (de) 1993-08-19
EP0626098B1 (de) 1996-06-05
ATE139059T1 (de) 1996-06-15
EP0626098A1 (de) 1994-11-30
JPH07503811A (ja) 1995-04-20
TW238406B (enExample) 1995-01-11
US5432115A (en) 1995-07-11
DE4204298C1 (enExample) 1993-03-04
DE59302829D1 (de) 1996-07-11
JP3233935B2 (ja) 2001-12-04
KR950700609A (ko) 1995-01-16

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)