JP3213517U - キャリア、キャリアリードフレーム、及び、発光デバイス - Google Patents
キャリア、キャリアリードフレーム、及び、発光デバイス Download PDFInfo
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
Description
本願は、2014年5月23日に出願された台湾特許出願第103118060号、及び、2015年2月3日に出願された台湾特許出願第104103527号の優先権を主張する。この結果、これらは、その全体が参照により本明細書に組み込まれている。
本願考案は、キャリアリードフレーム、及び、キャリアリードフレームから作られる発光デバイスに関する。より具体的には、本願考案は、発光ダイオード(LED)チップ、及び、リードフレームから作られる発光デバイスを受け入れるキャリアリードフレームに関する。
発光ダイオード(LED)は、長寿命、小体積、高衝撃耐性、低発熱および低電力消費などの複数の利点を有する。それゆえ、家庭用機器および多様な他の電気製品において、表示器または光源として広範に使用されてきた。近年、LEDは、マルチカラーおよび高輝度へと発展してきた。それゆえ、それらの用途は、大型屋外看板、交通信号灯器および関連分野へと広まってきた。将来、LEDは、節電機能および環境保護機能を兼ね備えた主流の照明用光源になる可能性さえある。LEDに高い信頼性を与えるべく、殆どのLEDは、耐久発光デバイスを形成するパッケージング処理を受けている。
規則正しく配置されるので、表面配向および方向調整に必要とされる設備および時間は除かれ、複数の発光デバイスの生産速度を大幅に改善できる。
チックボディの洗浄)は、好適には、残留物が除去された後であって延伸部が除去される前に実行される。これは、洗浄工程中に材料が落下することを回避すべく、延伸部によってキャリアとリードフレームとの間の接続強度を高めることができ、最終的には、延伸部は除去される。
ング部分112Aは筐体111の断面111Aの外に突出する。
。更に、キャリアリードフレーム100´の複数の技術的内容もまた、キャリアリードフレーム100に対する参照として使用され得るということが理解されるだろう。
ランナー領域122を通過する。更に、プラスチックボディ150は、プラスチックボディ150と延伸部140との間における接触領域を増大させるべく、(図18Aに示されるような)延伸部140の凹部1121と接触する。
Claims (16)
- LEDチップと、封止材と、キャリア(110)とを備える発光デバイスであって、前記キャリア(110)は、少なくとも1つの電極部(112)と、前記少なくとも1つの電極部(112)の少なくとも一部を覆う筐体(111)とを含み、前記電極部(112)は、電極部断面(112A2)を有し、前記筐体(111)は、筐体断面(111A)を有する、発光デバイス。
- 前記少なくとも1つの電極部(112)は、ウィング部分(112A)を有し、前記ウィング部分(112A)は、中央領域(112A1)および2つのエッジ領域(112A2)を有し、前記中央領域(112A1)は、前記2つのエッジ領域(112A2)から凹んでいる、請求項1に記載の発光デバイス。
- 前記ウィング部分(112A)は、前記筐体(111)の外側に露出される、請求項2に記載の発光デバイス。
- 前記ウィング部分(112A)は、前記電極部(112)の中央領域(112A1)が、前記筐体断面(111A)と同一平面上にないように、前記筐体断面(111A)の外に突出する、請求項2または3に記載の発光デバイス。
- 前記キャリア(110)は、反射凹状カップを形成する、請求項1から4のいずれか1項に記載の発光デバイス。
- 前記LEDチップは、前記反射凹状カップの中へとダイボンディングされてワイヤボンディングされる、請求項5に記載の発光デバイス。
- 前記反射凹状カップは、前記LEDチップを封止すべく前記封止材で埋められる、請求項5または6に記載の発光デバイス。
- 前記LEDチップは、前記キャリア(110)の内側で支持され、前記封止材で覆われる、請求項1から7のいずれか1項に記載の発光デバイス。
- 前記筐体(111)は、プラスチック製である、請求項1から8のいずれか1項に記載の発光デバイス。
- 前記電極部断面(112A2)は、少なくとも1つの湾曲面を含む、請求項1から9のいずれか1項に記載の発光デバイス。
- 前記筐体断面(111A)は、前記筐体(111)の4つの角に位置する、請求項1から10のいずれか1項に記載の発光デバイス。
- 前記筐体断面(111A)は、前記電極部断面(112A2)と同レベルにない、請求項1から11のいずれか1項に記載の発光デバイス。
- 前記電極部(112)の各々は、内側面(112B)および互いに対向して配設された2つの接続面(112C)を含み、前記接続面(112C)の各々は、前記ウィング部分(112A)を前記内側面(112B)に接続する、請求項1から12のいずれか1項に記載の発光デバイス。
- 前記少なくとも1つの電極部(112)は、少なくとも1つの凹部(1121)を含み
、前記凹部(1121)は、前記接続面(112C)が平らでない面になるように、前記接続面(112C)に配設される、請求項13に記載の発光デバイス。 - 前記少なくとも1つの電極部(112)は、導電性層で被覆された、請求項1から14のいずれか1項に記載の発光デバイス。
- 前記キャリア(110)は、2つの前記電極部(112)を備える、請求項1から15のいずれか1項に記載の発光デバイス。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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TW103118060 | 2014-05-23 | ||
TW103118060 | 2014-05-23 | ||
TW104103527 | 2015-02-03 | ||
TW104103527A TWI553264B (zh) | 2014-05-23 | 2015-02-03 | 承載支架及其製造方法以及從該承載支架所製得之發光裝置及其製造方法 |
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JP2017114368 Continuation | 2015-05-22 |
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JP3213517U true JP3213517U (ja) | 2017-11-16 |
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JP2015104971A Pending JP2015226063A (ja) | 2014-05-23 | 2015-05-22 | キャリア、キャリアリードフレーム、及び、発光デバイス |
JP2017003464U Active JP3213517U (ja) | 2014-05-23 | 2017-07-28 | キャリア、キャリアリードフレーム、及び、発光デバイス |
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JP2015104971A Pending JP2015226063A (ja) | 2014-05-23 | 2015-05-22 | キャリア、キャリアリードフレーム、及び、発光デバイス |
Country Status (6)
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US (4) | US9640733B2 (ja) |
EP (2) | EP3404727A1 (ja) |
JP (2) | JP2015226063A (ja) |
CN (5) | CN105185888B (ja) |
DE (2) | DE202015009510U1 (ja) |
TW (1) | TWI553264B (ja) |
Families Citing this family (14)
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TWI553264B (zh) | 2014-05-23 | 2016-10-11 | 億光電子工業股份有限公司 | 承載支架及其製造方法以及從該承載支架所製得之發光裝置及其製造方法 |
US10177292B2 (en) | 2014-05-23 | 2019-01-08 | Everlight Electronics Co., Ltd. | Carrier, carrier leadframe, and light emitting device |
JP6248054B2 (ja) * | 2015-01-07 | 2017-12-13 | ミネベアミツミ株式会社 | 面状照明装置 |
KR102528014B1 (ko) * | 2015-11-27 | 2023-05-10 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 조명 장치 |
US10461233B2 (en) * | 2015-11-27 | 2019-10-29 | Lg Innotek Co., Ltd. | Light emitting device package and lighting device |
JP6337873B2 (ja) * | 2015-11-30 | 2018-06-06 | 日亜化学工業株式会社 | パッケージ、パッケージ中間体、発光装置及びそれらの製造方法 |
JP6332253B2 (ja) | 2015-12-09 | 2018-05-30 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置 |
JP6332251B2 (ja) * | 2015-12-09 | 2018-05-30 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置 |
JP6394634B2 (ja) | 2016-03-31 | 2018-09-26 | 日亜化学工業株式会社 | リードフレーム、パッケージ及び発光装置、並びにこれらの製造方法 |
JP2017201689A (ja) * | 2016-05-05 | 2017-11-09 | 億光電子工業股▲ふん▼有限公司Everlight Electronics Co.,Ltd. | キャリア、キャリアリードフレーム、及び発光デバイス |
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CN108807644B (zh) | 2020-07-24 |
CN110676359B (zh) | 2022-06-07 |
TWI553264B (zh) | 2016-10-11 |
CN105185888A (zh) | 2015-12-23 |
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CN108922953B (zh) | 2020-06-16 |
CN110676359A (zh) | 2020-01-10 |
US20170162771A1 (en) | 2017-06-08 |
CN105185888B (zh) | 2019-11-05 |
CN108807644A (zh) | 2018-11-13 |
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TW201544757A (zh) | 2015-12-01 |
DE202015009510U1 (de) | 2018-03-15 |
US20170170376A1 (en) | 2017-06-15 |
CN108963049B (zh) | 2021-04-20 |
CN108922953A (zh) | 2018-11-30 |
CN108963049A (zh) | 2018-12-07 |
US9691960B1 (en) | 2017-06-27 |
JP2015226063A (ja) | 2015-12-14 |
DE202015009402U1 (de) | 2017-06-30 |
US9640733B2 (en) | 2017-05-02 |
US20150340568A1 (en) | 2015-11-26 |
US20180123012A1 (en) | 2018-05-03 |
EP2947705B1 (en) | 2018-08-01 |
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