JP2938470B2 - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JP2938470B2 JP2938470B2 JP1141522A JP14152289A JP2938470B2 JP 2938470 B2 JP2938470 B2 JP 2938470B2 JP 1141522 A JP1141522 A JP 1141522A JP 14152289 A JP14152289 A JP 14152289A JP 2938470 B2 JP2938470 B2 JP 2938470B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- memory device
- semiconductor memory
- test
- register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Dram (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1141522A JP2938470B2 (ja) | 1989-06-01 | 1989-06-01 | 半導体記憶装置 |
US07/527,205 US5132937A (en) | 1989-06-01 | 1990-05-23 | Semiconductor memory device having on-chip test circuit and operating method thereof |
DE4017616A DE4017616A1 (de) | 1989-06-01 | 1990-05-31 | Halbleiterspeichereinrichtung mit einem auf dem chip befindlichen testschaltkreis und betriebsverfahren hierfuer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1141522A JP2938470B2 (ja) | 1989-06-01 | 1989-06-01 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH035999A JPH035999A (ja) | 1991-01-11 |
JP2938470B2 true JP2938470B2 (ja) | 1999-08-23 |
Family
ID=15293925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1141522A Expired - Lifetime JP2938470B2 (ja) | 1989-06-01 | 1989-06-01 | 半導体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5132937A (it) |
JP (1) | JP2938470B2 (it) |
DE (1) | DE4017616A1 (it) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2899374B2 (ja) * | 1990-07-16 | 1999-06-02 | 沖電気工業株式会社 | 半導体メモリのデコーダチェック回路 |
JPH04119600A (ja) * | 1990-09-10 | 1992-04-21 | Mitsubishi Electric Corp | テストモード機能内蔵ダイナミックランダムアクセスメモリ装置 |
US5305266A (en) * | 1991-03-22 | 1994-04-19 | Texas Instruments Incorporated | High speed parallel test architecture |
JP2913926B2 (ja) * | 1991-08-29 | 1999-06-28 | 日本電気株式会社 | 半導体記憶装置 |
JPH05166396A (ja) * | 1991-12-12 | 1993-07-02 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5400343A (en) * | 1992-02-28 | 1995-03-21 | Intel Corporation | Apparatus and method for defective column detection for semiconductor memories |
JP2716906B2 (ja) * | 1992-03-27 | 1998-02-18 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH0612878A (ja) * | 1992-06-25 | 1994-01-21 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5450426A (en) * | 1992-12-18 | 1995-09-12 | Unisys Corporation | Continuous error detection using duplicate core memory cells |
US5588115A (en) * | 1993-01-29 | 1996-12-24 | Teradyne, Inc. | Redundancy analyzer for automatic memory tester |
JPH06295599A (ja) * | 1993-04-09 | 1994-10-21 | Nec Corp | 半導体記憶装置 |
KR970003810B1 (ko) * | 1993-04-14 | 1997-03-22 | 삼성전자 주식회사 | 어드레스 천이 검출회로를 내장하는 불휘발성 반도체 집적회로 |
KR960008824B1 (en) * | 1993-11-17 | 1996-07-05 | Samsung Electronics Co Ltd | Multi bit test circuit and method of semiconductor memory device |
US5631913A (en) * | 1994-02-09 | 1997-05-20 | Matsushita Electric Industrial Co., Ltd. | Test circuit and test method of integrated semiconductor device |
US5638382A (en) * | 1994-06-29 | 1997-06-10 | Intel Corporation | Built-in self test function for a processor including intermediate test results |
US5511164A (en) * | 1995-03-01 | 1996-04-23 | Unisys Corporation | Method and apparatus for determining the source and nature of an error within a computer system |
US5568437A (en) * | 1995-06-20 | 1996-10-22 | Vlsi Technology, Inc. | Built-in self test for integrated circuits having read/write memory |
JP3545535B2 (ja) * | 1996-05-29 | 2004-07-21 | 株式会社アドバンテスト | 半導体メモリ試験方法および装置 |
US5754556A (en) * | 1996-07-18 | 1998-05-19 | Teradyne, Inc. | Semiconductor memory tester with hardware accelerators |
US5740180A (en) * | 1997-02-18 | 1998-04-14 | Motorola, Inc. | Circuit and test method for testing input cells |
JP3556649B2 (ja) * | 2002-07-26 | 2004-08-18 | 沖電気工業株式会社 | メモリの異常動作検出回路,集積回路,及び異常動作検出方法 |
DE102005052269A1 (de) * | 2005-10-27 | 2007-05-10 | Atmel Germany Gmbh | Integrierte Schaltung mit integrierter Testhilfe-Teilschaltung |
US7674759B2 (en) | 2007-09-05 | 2010-03-09 | Conopco, Inc. | Stable liquid cleansing compositions containing high level of fatty acid isethionate surfactant products having more than 10 wt. % of fatty acid/fatty soap content |
US7807612B2 (en) | 2007-12-18 | 2010-10-05 | Conopco, Inc. | Fatty acyl isethionate product-containing liquid cleansing compositions stabilized with mixture of long chain and short chain fatty acids/fatty soaps |
US7879780B2 (en) | 2008-09-23 | 2011-02-01 | Conopco, Inc. | Stable cleansing compositions containing fatty acyl isethionate surfactant products having more than 10 wt. % of fatty acid/fatty soap content using high level of polyol and methods thereof |
US9635253B2 (en) | 2009-01-05 | 2017-04-25 | Duke University | Multiscale telescopic imaging system |
US8830377B2 (en) | 2010-01-04 | 2014-09-09 | Duke University | Monocentric lens-based multi-scale optical systems and methods of use |
US9494771B2 (en) | 2009-01-05 | 2016-11-15 | Duke University | Quasi-monocentric-lens-based multi-scale optical system |
US9432591B2 (en) | 2009-01-05 | 2016-08-30 | Duke University | Multiscale optical system having dynamic camera settings |
US9395617B2 (en) | 2009-01-05 | 2016-07-19 | Applied Quantum Technologies, Inc. | Panoramic multi-scale imager and method therefor |
US8536908B2 (en) * | 2011-09-29 | 2013-09-17 | Spansion Llc | Apparatus and method for smart VCC trip point design for testability |
US8981823B1 (en) | 2011-09-29 | 2015-03-17 | Spansion Llc | Apparatus and method for smart VCC trip point design for testability |
CN111693754B (zh) * | 2019-12-31 | 2023-11-17 | 重庆芯讯通无线科技有限公司 | 通信模组pin脚电压检测装置、设备及方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4541090A (en) * | 1981-06-09 | 1985-09-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
US4549101A (en) * | 1983-12-01 | 1985-10-22 | Motorola, Inc. | Circuit for generating test equalization pulse |
US4868823B1 (en) * | 1984-08-31 | 1999-07-06 | Texas Instruments Inc | High speed concurrent testing of dynamic read/write memory array |
EP0193210A3 (en) * | 1985-02-28 | 1988-12-14 | Nec Corporation | Semiconductor memory device with a built-in test circuit |
ATE53261T1 (de) * | 1985-03-26 | 1990-06-15 | Siemens Ag | Verfahren zum betreiben eines halbleiterspeichers mit integrierter paralleltestmoeglichkeit und auswerteschaltung zur durchfuehrung des verfahrens. |
ATE67892T1 (de) * | 1985-09-11 | 1991-10-15 | Siemens Ag | Integrierter halbleiterspeicher. |
JPS62170100A (ja) * | 1986-01-21 | 1987-07-27 | Nec Corp | Ram集積回路 |
JPS62170094A (ja) * | 1986-01-21 | 1987-07-27 | Mitsubishi Electric Corp | 半導体記憶回路 |
JPS6378400A (ja) * | 1986-09-19 | 1988-04-08 | Fujitsu Ltd | Ram試験方式 |
JPH071639B2 (ja) * | 1986-12-11 | 1995-01-11 | 三菱電機株式会社 | 半導体装置 |
JPH0740440B2 (ja) * | 1987-02-04 | 1995-05-01 | 三菱電機株式会社 | 半導体記憶装置 |
JPS63244400A (ja) * | 1987-03-16 | 1988-10-11 | シーメンス・アクチエンゲゼルシヤフト | メモリセルの検査回路装置および方法 |
JPS63239696A (ja) * | 1987-03-27 | 1988-10-05 | Toshiba Corp | 冗長回路付メモリの試験装置 |
JPS63257999A (ja) * | 1987-04-15 | 1988-10-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1989
- 1989-06-01 JP JP1141522A patent/JP2938470B2/ja not_active Expired - Lifetime
-
1990
- 1990-05-23 US US07/527,205 patent/US5132937A/en not_active Expired - Fee Related
- 1990-05-31 DE DE4017616A patent/DE4017616A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
US5132937A (en) | 1992-07-21 |
DE4017616A1 (de) | 1990-12-06 |
JPH035999A (ja) | 1991-01-11 |
DE4017616C2 (it) | 1991-09-26 |
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