JP2914843B2 - ダイナミック型半導体メモリ - Google Patents

ダイナミック型半導体メモリ

Info

Publication number
JP2914843B2
JP2914843B2 JP5049700A JP4970093A JP2914843B2 JP 2914843 B2 JP2914843 B2 JP 2914843B2 JP 5049700 A JP5049700 A JP 5049700A JP 4970093 A JP4970093 A JP 4970093A JP 2914843 B2 JP2914843 B2 JP 2914843B2
Authority
JP
Japan
Prior art keywords
signal
active
special function
semiconductor memory
entry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5049700A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06267297A (ja
Inventor
隆 大沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5049700A priority Critical patent/JP2914843B2/ja
Priority to US08/175,559 priority patent/US5521873A/en
Priority to DE69409146T priority patent/DE69409146T2/de
Priority to EP94100021A priority patent/EP0615249B1/en
Priority to KR1019940004659A priority patent/KR0167869B1/ko
Priority to TW083102232A priority patent/TW279983B/zh
Publication of JPH06267297A publication Critical patent/JPH06267297A/ja
Application granted granted Critical
Publication of JP2914843B2 publication Critical patent/JP2914843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP5049700A 1993-03-10 1993-03-10 ダイナミック型半導体メモリ Expired - Fee Related JP2914843B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP5049700A JP2914843B2 (ja) 1993-03-10 1993-03-10 ダイナミック型半導体メモリ
US08/175,559 US5521873A (en) 1993-03-10 1993-12-30 Semiconductor dynamic random access memory
DE69409146T DE69409146T2 (de) 1993-03-10 1994-01-03 Dynamischer Direktzugriffhalbleiterspeicher
EP94100021A EP0615249B1 (en) 1993-03-10 1994-01-03 Semiconductor dynamic random access memory
KR1019940004659A KR0167869B1 (ko) 1993-03-10 1994-03-10 다이나믹형 반도체 메모리
TW083102232A TW279983B (en:Method) 1993-03-10 1994-03-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5049700A JP2914843B2 (ja) 1993-03-10 1993-03-10 ダイナミック型半導体メモリ

Publications (2)

Publication Number Publication Date
JPH06267297A JPH06267297A (ja) 1994-09-22
JP2914843B2 true JP2914843B2 (ja) 1999-07-05

Family

ID=12838464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5049700A Expired - Fee Related JP2914843B2 (ja) 1993-03-10 1993-03-10 ダイナミック型半導体メモリ

Country Status (6)

Country Link
US (1) US5521873A (en:Method)
EP (1) EP0615249B1 (en:Method)
JP (1) JP2914843B2 (en:Method)
KR (1) KR0167869B1 (en:Method)
DE (1) DE69409146T2 (en:Method)
TW (1) TW279983B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08180700A (ja) * 1994-12-28 1996-07-12 Nec Corp 半導体記憶装置とその試験方法
KR100232897B1 (ko) * 1996-12-31 1999-12-01 김영환 클럭 인에이블 신호의 제어를 통한 디램 상태 자동설정장치 및 그 구현방법
JP3737437B2 (ja) 2001-02-01 2006-01-18 Ｎｅｃエレクトロニクス株式会社 半導体メモリ及びその動作モードのエントリー方法
JP2003045200A (ja) 2001-08-02 2003-02-14 Mitsubishi Electric Corp 半導体モジュールおよびそれに用いる半導体記憶装置
JP2007018710A (ja) * 2006-09-05 2007-01-25 Fujitsu Ltd 半導体装置及びその試験方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250593A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd ダイナミツク型ｒａｍ
FR2623652A1 (fr) * 1987-11-20 1989-05-26 Philips Nv Unite de memoire statique a plusieurs modes de test et ordinateur muni de telles unites
KR920007805Y1 (ko) * 1991-02-09 1992-10-19 조규섭 볍씨 침종겸용 최아장치

Also Published As

Publication number Publication date
EP0615249A3 (en) 1995-08-23
KR940022552A (ko) 1994-10-21
DE69409146T2 (de) 1998-08-20
KR0167869B1 (ko) 1999-02-01
DE69409146D1 (de) 1998-04-30
EP0615249A2 (en) 1994-09-14
EP0615249B1 (en) 1998-03-25
US5521873A (en) 1996-05-28
JPH06267297A (ja) 1994-09-22
TW279983B (en:Method) 1996-07-01

Similar Documents

Publication Publication Date Title
US5717639A (en) Memory device having circuitry for initializing and reprogramming a control operation feature
JP3117893B2 (ja) 書込待ち時間制御機能を有する同期式メモリ装置
KR100414413B1 (ko) 반도체 기억장치
KR100330072B1 (ko) 반도체 메모리 장치
US5812842A (en) Method for initializing and reprogramming a control operation feature of a memory device
US6343048B1 (en) Operation mode setting circuit of semiconductor memory device and method for setting thereof
US7251171B2 (en) Semiconductor memory and system apparatus
US5982697A (en) Method for initializing and reprogramming a control operation feature of a memory device
KR20010085622A (ko) 반도체 기억 장치
JPS61178794A (ja) ジユアル　ポート　メモリ集積回路
JP2914843B2 (ja) ダイナミック型半導体メモリ
US7782682B2 (en) Semiconductor device with circuitry for efficient information exchange
US5371869A (en) Micro-controller unit for selectively accessing an internal memory or an external extended memory using a read/write terminal
JP3307009B2 (ja) 半導体記憶装置
JP3725270B2 (ja) 半導体装置
KR100310715B1 (ko) 동기형반도체기억장치
KR20040003562A (ko) 동기식 반도체 기억장치의 테스트 모드 진입회로
US6459636B2 (en) Mode selection circuit for semiconductor memory device
US5946269A (en) Synchronous RAM controlling device and method
JPH11176157A (ja) 半導体記憶回路
JP3919847B2 (ja) 半導体記憶装置
US6744679B2 (en) Semiconductor memory device
JPS637591A (ja) アドレスマルチプレクス型半導体メモリ
JPH0855077A (ja) 情報利用回路
JPH09128333A (ja) 半導体集積回路

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080416

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090416

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100416

Year of fee payment: 11

LAPS Cancellation because of no payment of annual fees