JP2605687B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2605687B2
JP2605687B2 JP61088716A JP8871686A JP2605687B2 JP 2605687 B2 JP2605687 B2 JP 2605687B2 JP 61088716 A JP61088716 A JP 61088716A JP 8871686 A JP8871686 A JP 8871686A JP 2605687 B2 JP2605687 B2 JP 2605687B2
Authority
JP
Japan
Prior art keywords
bonding pad
mos transistor
signal
channel mos
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61088716A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62244144A (ja
Inventor
英之 尾崎
和俊 平山
一康 藤島
秀人 日高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61088716A priority Critical patent/JP2605687B2/ja
Priority to KR1019860009327A priority patent/KR910000114B1/ko
Priority to US07/032,624 priority patent/US4808844A/en
Priority to DE19873712178 priority patent/DE3712178A1/de
Publication of JPS62244144A publication Critical patent/JPS62244144A/ja
Application granted granted Critical
Publication of JP2605687B2 publication Critical patent/JP2605687B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W76/17—
    • H10W72/90—
    • H10W44/20—
    • H10W44/601—
    • H10W72/071—
    • H10W72/5449—
    • H10W72/932—
    • H10W90/754—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP61088716A 1986-04-07 1986-04-17 半導体装置 Expired - Lifetime JP2605687B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61088716A JP2605687B2 (ja) 1986-04-17 1986-04-17 半導体装置
KR1019860009327A KR910000114B1 (ko) 1986-04-07 1986-11-05 반도체 장치
US07/032,624 US4808844A (en) 1986-04-17 1987-04-01 Semiconductor device
DE19873712178 DE3712178A1 (de) 1986-04-17 1987-04-10 Halbleitereinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61088716A JP2605687B2 (ja) 1986-04-17 1986-04-17 半導体装置

Publications (2)

Publication Number Publication Date
JPS62244144A JPS62244144A (ja) 1987-10-24
JP2605687B2 true JP2605687B2 (ja) 1997-04-30

Family

ID=13950623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61088716A Expired - Lifetime JP2605687B2 (ja) 1986-04-07 1986-04-17 半導体装置

Country Status (4)

Country Link
US (1) US4808844A (enExample)
JP (1) JP2605687B2 (enExample)
KR (1) KR910000114B1 (enExample)
DE (1) DE3712178A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001398B1 (ko) * 1987-11-30 1990-03-09 삼성전자 주식회사 양방성 입출력 셀
KR910003593B1 (ko) * 1987-12-30 1991-06-07 삼성전자 주식회사 고집적도 메모리용 모드 선택회로
JPH01280923A (ja) * 1988-05-07 1989-11-13 Mitsubishi Electric Corp 半導体集積回路装置
US4987325A (en) * 1988-07-13 1991-01-22 Samsung Electronics Co., Ltd. Mode selecting circuit for semiconductor memory device
US4866309A (en) * 1988-07-18 1989-09-12 Western Digital Corporation Multiplexed bus architecture for configuration sensing
US6304987B1 (en) * 1995-06-07 2001-10-16 Texas Instruments Incorporated Integrated test circuit
US4987319A (en) * 1988-09-08 1991-01-22 Kawasaki Steel Corporation Programmable input/output circuit and programmable logic device
JP2560805B2 (ja) * 1988-10-06 1996-12-04 三菱電機株式会社 半導体装置
US5161124A (en) * 1988-10-27 1992-11-03 Texas Instruments Incorporated Bond programmable integrated circuit
US4912348A (en) * 1988-12-09 1990-03-27 Idaho Research Foundation Method for designing pass transistor asynchronous sequential circuits
JP3005250B2 (ja) 1989-06-30 2000-01-31 テキサス インスツルメンツ インコーポレイテツド バスモニター集積回路
JP2531827B2 (ja) * 1990-04-25 1996-09-04 株式会社東芝 半導体装置及びその製造方法
JP2925337B2 (ja) * 1990-12-27 1999-07-28 株式会社東芝 半導体装置
US5353250A (en) * 1991-12-09 1994-10-04 Texas Instruments Inc. Pin programmable dram that provides customer option programmability
JP2727921B2 (ja) * 1993-08-13 1998-03-18 日本電気株式会社 半導体集積回路装置
US5557219A (en) * 1994-01-31 1996-09-17 Texas Instruments Incorporated Interface level programmability
US5760643A (en) * 1995-10-31 1998-06-02 Texas Instruments Incorporated Integrated circuit die with selective pad-to-pad bypass of internal circuitry
US5969538A (en) 1996-10-31 1999-10-19 Texas Instruments Incorporated Semiconductor wafer with interconnect between dies for testing and a process of testing
DE19638175C2 (de) * 1996-09-18 2000-05-25 Siemens Ag Integrierte Schaltung (Chip) mit einem diese in sich aufnehmenden Gehäuse und externer Konfigurationsmöglichkeit
US6408413B1 (en) 1998-02-18 2002-06-18 Texas Instruments Incorporated Hierarchical access of test access ports in embedded core integrated circuits
US6405335B1 (en) 1998-02-25 2002-06-11 Texas Instruments Incorporated Position independent testing of circuits
US7058862B2 (en) * 2000-05-26 2006-06-06 Texas Instruments Incorporated Selecting different 1149.1 TAP domains from update-IR state
JP3334671B2 (ja) * 1999-04-16 2002-10-15 日本電気株式会社 半導体装置及びこれを搭載したモジュール
US6731071B2 (en) * 1999-06-21 2004-05-04 Access Business Group International Llc Inductively powered lamp assembly
US6728915B2 (en) 2000-01-10 2004-04-27 Texas Instruments Incorporated IC with shared scan cells selectively connected in scan path
US6769080B2 (en) 2000-03-09 2004-07-27 Texas Instruments Incorporated Scan circuit low power adapter with counter
JP4313544B2 (ja) * 2002-05-15 2009-08-12 富士通マイクロエレクトロニクス株式会社 半導体集積回路
US7131033B1 (en) 2002-06-21 2006-10-31 Cypress Semiconductor Corp. Substrate configurable JTAG ID scheme
US7818640B1 (en) 2004-10-22 2010-10-19 Cypress Semiconductor Corporation Test system having a master/slave JTAG controller
US20060086940A1 (en) * 2004-10-26 2006-04-27 Jim Wang Package structure of multi-chips light-emitting module

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157056A (en) * 1980-05-09 1981-12-04 Fujitsu Ltd Manufacture of read-only memory
US4386284A (en) * 1981-02-06 1983-05-31 Rca Corporation Pulse generating circuit using current source
DE3120163A1 (de) * 1981-05-21 1982-12-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Cmos-auswahlschaltung
JPS5835963A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 集積回路装置
DE3218992A1 (de) * 1982-05-19 1983-11-24 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter schaltkreis
JPS6188538A (ja) * 1984-10-05 1986-05-06 Fujitsu Ltd 半導体装置
US4638181A (en) * 1984-11-29 1987-01-20 Rca Corporation Signal source selector
JPS6251231A (ja) * 1985-08-30 1987-03-05 Fujitsu Ltd 半導体集積回路装置
JPH0831789B2 (ja) * 1985-09-04 1996-03-27 沖電気工業株式会社 出力回路

Also Published As

Publication number Publication date
DE3712178A1 (de) 1987-10-22
KR870010628A (ko) 1987-11-30
DE3712178C2 (enExample) 1992-08-27
US4808844A (en) 1989-02-28
KR910000114B1 (ko) 1991-01-21
JPS62244144A (ja) 1987-10-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term