JP2025536163A - 記憶ユニット、３ｄメモリ及びその製造方法、電子装置 - Google Patents

記憶ユニット、３ｄメモリ及びその製造方法、電子装置

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Publication number
JP2025536163A
JP2025536163A JP2023552547A JP2023552547A JP2025536163A JP 2025536163 A JP2025536163 A JP 2025536163A JP 2023552547 A JP2023552547 A JP 2023552547A JP 2023552547 A JP2023552547 A JP 2023552547A JP 2025536163 A JP2025536163 A JP 2025536163A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor layer
substrate
contact region
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023552547A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025536163A5 (enExample
Inventor
ダイ、ジン
ユ、ヨン
リアン、ジン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Superstring Academy of Memory Technology
Original Assignee
Beijing Superstring Academy of Memory Technology
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Filing date
Publication date
Application filed by Beijing Superstring Academy of Memory Technology filed Critical Beijing Superstring Academy of Memory Technology
Publication of JP2025536163A publication Critical patent/JP2025536163A/ja
Publication of JP2025536163A5 publication Critical patent/JP2025536163A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2023552547A 2022-10-18 2022-12-07 記憶ユニット、３ｄメモリ及びその製造方法、電子装置 Pending JP2025536163A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202211269945.4A CN115346987B (zh) 2022-10-18 2022-10-18 一种存储单元、3d存储器及其制备方法、电子设备
CN202211269945.4 2022-10-18
PCT/CN2022/137319 WO2024082394A1 (zh) 2022-10-18 2022-12-07 存储单元、3d存储器及其制备方法、电子设备

Publications (2)

Publication Number Publication Date
JP2025536163A true JP2025536163A (ja) 2025-11-05
JP2025536163A5 JP2025536163A5 (enExample) 2025-12-08

Family

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Family Applications (1)

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JP2023552547A Pending JP2025536163A (ja) 2022-10-18 2022-12-07 記憶ユニット、３ｄメモリ及びその製造方法、電子装置

Country Status (5)

Country Link
EP (1) EP4380330A4 (enExample)
JP (1) JP2025536163A (enExample)
KR (1) KR20250088678A (enExample)
CN (1) CN115346987B (enExample)
WO (1) WO2024082394A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117177556B (zh) * 2022-05-24 2026-07-24 长鑫存储技术有限公司 半导体结构及其形成方法
US11825642B1 (en) 2022-10-18 2023-11-21 Beijing Superstring Academy Of Memory Technology Memory cell, 3D memory and preparation method therefor, and electronic device
CN115346988B (zh) * 2022-10-18 2023-01-24 北京超弦存储器研究院 一种晶体管、3d存储器及其制备方法、电子设备
CN115346987B (zh) * 2022-10-18 2023-01-10 北京超弦存储器研究院 一种存储单元、3d存储器及其制备方法、电子设备
CN115915754B (zh) * 2022-11-17 2025-10-14 长鑫存储技术有限公司 半导体器件及其制备方法
CN115835626B (zh) * 2022-12-22 2024-04-09 北京超弦存储器研究院 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备
CN117425341A (zh) * 2023-01-31 2024-01-19 北京超弦存储器研究院 一种3d堆叠的半导体器件、阵列及其制造方法、电子设备
CN115867026B (zh) * 2023-02-23 2023-07-18 北京超弦存储器研究院 半导体结构、存储器及其制造方法、电子设备
CN116347889B (zh) * 2023-03-14 2024-01-12 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法及电子设备
WO2024187732A1 (zh) * 2023-03-14 2024-09-19 北京超弦存储器研究院 存储器及其制备方法、电子设备
CN115995494B (zh) * 2023-03-23 2023-07-14 北京超弦存储器研究院 晶体管、3d堆叠的半导体器件及其制造方法、电子设备
CN118742019B (zh) * 2023-03-31 2025-08-05 北京超弦存储器研究院 存储器及其制造方法、电子设备
CN116249348B (zh) * 2023-04-13 2024-02-20 北京超弦存储器研究院 存储器及其访问方法、电子设备
CN116761426B (zh) * 2023-05-09 2025-01-17 长鑫存储技术有限公司 存储单元、存储阵列及存储阵列的制备方法
CN119136534B (zh) * 2023-06-06 2025-09-26 长鑫存储技术有限公司 一种半导体结构及其制作方法
CN116709773B (zh) * 2023-07-12 2026-07-31 长鑫科技集团股份有限公司 半导体结构及其制备方法
KR102792830B1 (ko) * 2023-10-04 2025-04-07 한양대학교 산학협력단 올 어라운드 채널을 갖는 트랜지스터 수직 적층 구조 기반 4f2용 dram 소자 및 이의 제조방법
CN119947079B (zh) * 2023-11-02 2025-11-28 北京超弦存储器研究院 半导体结构、半导体结构的制备方法以及电子设备
CN120076314B (zh) * 2023-11-28 2025-11-28 长鑫科技集团股份有限公司 半导体结构及其形成方法、存储器
CN117715419B (zh) * 2024-02-06 2024-04-19 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法、芯片及电子设备
CN120857496A (zh) * 2024-04-28 2025-10-28 北京超弦存储器研究院 半导体器件及其制造方法、电子设备
CN118201358B (zh) * 2024-05-15 2024-07-16 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备
CN118234233B (zh) * 2024-05-22 2024-07-23 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备
CN121604390A (zh) * 2024-08-19 2026-03-03 北京超弦存储器研究院 存储单元、存储器及其制备方法、电子设备
CN119418735B (zh) * 2025-01-06 2025-05-13 北京大学 存储单元、数据读写电路、存储器及其制备方法

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US7742328B2 (en) * 2007-06-15 2010-06-22 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
CN116686399A (zh) * 2021-03-08 2023-09-01 华为技术有限公司 半导体装置、电子设备、晶体管的形成方法
CN114864583A (zh) * 2022-05-12 2022-08-05 中国科学院微电子研究所 一种无电容dram单元结构及制造方法
CN115020480B (zh) * 2022-05-31 2026-07-24 长鑫存储技术有限公司 半导体结构
CN115346987B (zh) * 2022-10-18 2023-01-10 北京超弦存储器研究院 一种存储单元、3d存储器及其制备方法、电子设备

Also Published As

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EP4380330A4 (en) 2025-07-16
CN115346987A (zh) 2022-11-15
WO2024082394A1 (zh) 2024-04-25
EP4380330A1 (en) 2024-06-05
CN115346987B (zh) 2023-01-10
KR20250088678A (ko) 2025-06-17

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