WO2024082394A1 - 存储单元、3d存储器及其制备方法、电子设备 - Google Patents

存储单元、3d存储器及其制备方法、电子设备 Download PDF

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Publication number
WO2024082394A1
WO2024082394A1 PCT/CN2022/137319 CN2022137319W WO2024082394A1 WO 2024082394 A1 WO2024082394 A1 WO 2024082394A1 CN 2022137319 W CN2022137319 W CN 2022137319W WO 2024082394 A1 WO2024082394 A1 WO 2024082394A1
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Prior art keywords
electrode
semiconductor layer
substrate
gate
contact region
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PCT/CN2022/137319
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English (en)
French (fr)
Chinese (zh)
Inventor
戴瑾
余泳
梁静
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Beijing Superstring Academy of Memory Technology
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Beijing Superstring Academy of Memory Technology
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Priority to KR1020237035882A priority Critical patent/KR20250088678A/ko
Priority to EP22955194.0A priority patent/EP4380330A4/en
Priority to JP2023552547A priority patent/JP2025536163A/ja
Priority to US18/312,389 priority patent/US11825642B1/en
Publication of WO2024082394A1 publication Critical patent/WO2024082394A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Definitions

  • the embodiments of the present disclosure relate to but are not limited to the field of semiconductor technology, and in particular to a storage unit, a 3D memory and a method for preparing the same, and an electronic device.
  • the common dynamic random access memory (DRAM) storage unit structure is 1T1C type, that is, a structure in which the source of a transistor is connected to a capacitor.
  • This structure uses capacitors to store data, but because the power of the capacitor is consumed when reading, and the capacitor itself will also leak electricity, it is necessary to constantly refresh the charge in the capacitor, which consumes a lot of power.
  • miniaturization since the process of manufacturing capacitors occupies a large area, miniaturization has also become a problem.
  • the two-transistor capacitor-free memory cell (2Transistor 0Capacitor, 2T0C) uses two transistors as the unit structure, uses gate capacitance to store charge and changes transistor transconductance to store information.
  • the present disclosure provides a memory cell, the memory cell comprising: a first transistor and a second transistor disposed on a substrate, wherein:
  • the first transistor includes a first gate, a first electrode, a second electrode, and a first semiconductor layer disposed on the substrate, wherein the first gate extends in a direction parallel to the substrate;
  • the second transistor includes a third electrode, a fourth electrode, a second gate extending in a direction perpendicular to the substrate, and a second semiconductor layer surrounding the sidewall of the second gate, the first gate being connected to the second semiconductor layer;
  • the second semiconductor layer includes a second source contact region and a second drain contact region arranged at intervals, the third electrode is in contact with the second source contact region of the second semiconductor layer, the fourth electrode is in contact with the second drain contact region of the second semiconductor layer, and the channel between the second source contact region and the second drain contact region is a horizontal channel.
  • the orthographic projection of the first gate overlaps with the orthographic projection of the third electrode
  • the orthographic projection of the third electrode overlaps with the orthographic projection of the fourth electrode
  • the first gate of the first transistor and the third electrode of the second transistor are an integral structure.
  • the first gate is connected to a second source contact region of the second semiconductor layer.
  • an orthographic projection of the first electrode overlaps with an orthographic projection of the first gate.
  • the second drain contact region of the second semiconductor layer and the second source contact region of the second semiconductor layer are located on a sidewall of the second semiconductor layer, facing each other and spaced apart.
  • the second electrode surrounds and connects to the first semiconductor layer, and in a plane perpendicular to the substrate, a cross section of the second electrode has a ring-shaped opening, and the first semiconductor layer is located in the opening of the second electrode.
  • the first electrode is disposed on a side of the second electrode away from the second gate.
  • the first semiconductor layer includes a sidewall and two ends
  • the first semiconductor layer includes a first source contact region and a first drain contact region
  • the first source contact region is located on the sidewall of the first semiconductor layer and surrounds the first semiconductor layer
  • the first drain contact region is located on the sidewall of the first semiconductor layer and surrounds the first semiconductor layer, or is located at the end of the two ends away from the second gate.
  • the first electrode extends along a third direction
  • the first gate extends along a second direction
  • the third electrode extends along the second direction
  • the fourth electrode extends along the third direction
  • the second direction and the third direction intersect and are parallel to the substrate.
  • an orthographic projection of the first electrode and an orthographic projection of the second electrode do not overlap; and an orthographic projection of the third electrode and an orthographic projection of the fourth electrode do not overlap.
  • the first electrode, the second electrode, and the third electrode are located on a first side of the second gate, the fourth electrode is located on a second side of the second gate, and the first side and the second side are opposite sides.
  • a distance between a surface of the first electrode close to the substrate and the substrate is smaller than a distance between a surface of the third electrode close to the substrate and the substrate, and a distance between a surface of the first electrode away from the substrate and the substrate is greater than a distance between a surface of the third electrode away from the substrate and the substrate.
  • the film layers of the third electrode and the fourth electrode are different regions of the same conductive film layer and are arranged at intervals, and the same conductive film layer is approximately parallel to the substrate.
  • the second transistor also includes: a second gate insulating layer arranged between the second gate and the second semiconductor layer and surrounding the side wall of the second gate, and along a direction perpendicular to the substrate, the length of the second semiconductor layer is less than or equal to the length of the second gate insulating layer, and is greater than or equal to the length of the third electrode, and is greater than or equal to the length of the fourth electrode.
  • the materials of the first semiconductor layer and the second semiconductor layer include metal oxide semiconductor materials.
  • the metal in the metal oxide semiconductor material includes at least one of indium, tin, zinc, aluminum, and gallium.
  • the present disclosure provides a memory cell, comprising: a read transistor and a write transistor disposed on a substrate, wherein:
  • the read transistor comprises a first gate, a first semiconductor layer, a first source electrode, and a first drain electrode; the first semiconductor layer surrounds the first gate; the first gate extends in a direction parallel to the substrate;
  • the write transistor comprises a second gate, a second semiconductor layer, a second source electrode, and a second drain electrode; the second semiconductor layer surrounds the second gate; the second gate extends in a direction perpendicular to the substrate, and the second source electrode of the write transistor is connected to the first gate of the read transistor;
  • the channel of the second semiconductor layer of the write transistor is a horizontal channel.
  • the read transistor and the write transistor are spaced apart and distributed on the substrate along a direction parallel to the substrate.
  • the second gate extends in a direction perpendicular to the substrate and has a sidewall, the second semiconductor layer surrounds the sidewall, and the second semiconductor layer includes a second source contact region;
  • the first gate extends in a direction parallel to the substrate and has a sidewall and two ends.
  • the first semiconductor layer at least surrounds the sidewall. One of the two ends extends to a second source contact region of the second semiconductor layer and contacts the second semiconductor layer.
  • the sidewall of the second semiconductor layer further includes a second drain contact region; the second source contact region and the second drain contact region are located in different regions of the sidewall of the second semiconductor layer, and the orthographic projections of the second source contact region and the second drain contact region in a plane perpendicular to the substrate have an overlapping region, so that a channel between the second source contact region and the second drain contact region is parallel to the substrate;
  • a first source contact region and a first drain contact region are provided on a sidewall of the first semiconductor layer, and a channel between the first source contact region and the first drain contact region is parallel to the substrate.
  • the present disclosure provides a 3D memory, comprising a plurality of memory cells stacked in a direction perpendicular to a substrate, wherein:
  • Each layer of the storage unit includes: a read transistor and a write transistor;
  • the read transistor comprises a first gate, a first semiconductor layer, a first source electrode and a first drain electrode, wherein the first gate extends in a direction parallel to the substrate;
  • the write transistor comprises a second gate, a second semiconductor layer, a second source electrode and a second drain electrode, wherein the second gate extends in a direction perpendicular to the substrate;
  • the second source electrode of the write transistor is connected to the first gate of the read transistor; the first semiconductor layer surrounds the first gate, and the second semiconductor layer surrounds the second gate; and the channel of the second semiconductor layer of the write transistor is a horizontal channel.
  • the read transistor and the write transistor in the same layer are spaced apart and distributed on the substrate along a direction parallel to the substrate.
  • the first gate electrode of the read transistor and the second source electrode of the write transistor are an integral structure.
  • the first gate extends along a second direction parallel to the substrate
  • the first semiconductor layer includes a first source contact region and a first drain contact region
  • the second semiconductor layer includes a second source contact region and a second drain contact region
  • Each layer of the memory cell further includes: a first bit line and a second bit line extending along a third direction parallel to the substrate, the third direction intersecting the second direction; the first bit line is connected to a first drain contact region of the first semiconductor layer, and the second bit line is connected to a second drain contact region of the second semiconductor layer;
  • Each layer of the memory cell further includes: a first word line and a second word line extending in a direction perpendicular to the substrate, respectively;
  • the first word lines are respectively connected to the first source contact regions of the first semiconductor layers of the memory cells at different layers, and the second word lines are respectively connected to the second gates of the memory cells at different layers.
  • the first word line surrounds a sidewall of each first semiconductor layer of the memory cells of different layers and is connected to a first source contact region of the sidewall of each first semiconductor layer.
  • the first gate has a sidewall, a first end, and a second end, the first end is connected to the second source contact region of the second semiconductor layer, and the first bit line is connected to the second end.
  • the present disclosure provides a method for preparing a 3D memory, wherein the 3D memory includes multiple layers of memory cells, a first word line, and a second word line stacked in a direction perpendicular to a substrate, wherein each layer of the memory cells includes: a read transistor and a write transistor, wherein the read transistor includes a first gate, a first semiconductor layer, a first source electrode, and a first drain electrode; and the write transistor includes a second gate, a second semiconductor layer, a second source electrode, and a second drain electrode.
  • the preparation method includes:
  • An insulating film and a metal film are alternately deposited on the substrate in sequence, and patterned to form a stacked structure including an insulating layer and a metal layer alternately arranged, wherein the metal layer includes a first sub-portion and a second sub-portion connected to each other, and a first drain electrode of the read transistor;
  • a semiconductor film, a gate insulating film, and a metal film completely filling the channel on the sidewalls of the channel formed by the first channel, the second channel, and the through hole in sequence, and etching the gate insulating film and the metal film in the through hole to form a first semiconductor layer, a second source electrode, a first gate electrode, and a second drain electrode located in the first channel;
  • a semiconductor film on the sidewall of the through hole to form a second semiconductor layer of the write transistor, the second semiconductor layer comprising a second source contact region and a second drain contact region that are spaced apart, the second source electrode contacts the second source contact region, and the second drain electrode contacts the second drain contact region; a channel between the second source contact region and the second drain contact region is a horizontal channel;
  • the first word line extending in a direction perpendicular to the substrate is formed by patterning, and the first source electrode of the read transistor at a different layer is a part of the first word line.
  • An embodiment of the present disclosure provides an electronic device, comprising the storage unit described in any of the above embodiments.
  • FIG. 1A is a schematic diagram of a storage unit provided by an exemplary embodiment
  • FIG1B is a cross-sectional view of the memory cell along the AA direction shown in FIG1A ;
  • FIG2 is an equivalent circuit diagram of a memory cell provided by an exemplary embodiment
  • FIG3 is a schematic diagram of an exemplary embodiment after forming a third insulating film
  • FIG4 is a schematic diagram of an exemplary embodiment after a groove is formed
  • FIG5 is a schematic diagram of an exemplary embodiment after the slot is filled
  • FIG6 is a schematic diagram of an exemplary embodiment after forming a through hole
  • FIG7A is a schematic diagram of an exemplary embodiment after a channel is formed
  • FIG. 7B is a schematic diagram of a first metal layer provided by an exemplary embodiment
  • FIG8A is a schematic diagram of an exemplary embodiment after forming a first semiconductor layer and a first gate insulating layer
  • FIG8B is a partial schematic diagram of FIG8A ;
  • FIG8C is a schematic cross-sectional view of FIG8B along the BB direction
  • FIG9A is a schematic diagram of an exemplary embodiment after forming a second metal layer
  • FIG9B is a partial schematic diagram of FIG9A ;
  • FIG9C is a schematic cross-sectional view of FIG9B along the BB direction;
  • FIG10A is a schematic diagram of an exemplary embodiment after removing the second metal layer in the through hole
  • FIG10B is a partial schematic diagram of FIG10A ;
  • FIG10C is a schematic cross-sectional view of FIG10B along the BB direction;
  • FIG. 11A is a schematic diagram of an exemplary embodiment after a gate is formed
  • FIG11B is a partial schematic diagram of FIG11A ;
  • FIG11C is a schematic cross-sectional view of FIG11B along the BB direction;
  • FIG. 12 is a schematic diagram of an exemplary embodiment after a slot 44 is formed
  • FIG. 13A is a schematic diagram of an exemplary embodiment after forming a fourth metal layer 34′;
  • FIG13B is a partial schematic diagram of FIG13A
  • FIG14A is a schematic diagram of an exemplary embodiment after a slot is formed
  • FIG14B is a partial schematic diagram of FIG14A
  • FIG14C is a schematic cross-sectional view of FIG14B along the BB direction;
  • FIG. 15 is a schematic diagram of an exemplary embodiment after forming a fifth insulating layer.
  • FIG16 is a schematic cross-sectional view of a storage unit provided by an exemplary embodiment
  • FIG17A is a schematic cross-sectional view of a 3D memory device provided by an exemplary embodiment along a direction parallel to a substrate;
  • FIG17B is a schematic cross-sectional view of a 3D memory device provided by an exemplary embodiment along a direction perpendicular to a substrate;
  • FIG. 18 is a flow chart of a method for preparing a 3D memory device according to an exemplary embodiment.
  • the terms “installed”, “connected”, and “connected” should be understood in a broad sense.
  • it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate, or the internal communication of two elements.
  • installed can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate, or the internal communication of two elements.
  • a transistor refers to an element including at least three terminals: a gate electrode, a drain electrode, and a source electrode.
  • a transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain electrode) and a source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode.
  • a channel region refers to a region where current mainly flows.
  • an electrode may be a source electrode, or may be a drain electrode, and one of the two electrodes of a same transistor is a source electrode and the other is a drain electrode.
  • electrical connection includes the situation where components are connected together through an element having some kind of electrical function.
  • element having some kind of electrical function includes the situation where components are connected together through an element having some kind of electrical function.
  • electrical function includes not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having various functions.
  • parallel means approximately parallel or almost parallel, for example, the angle formed by two straight lines is greater than -10° and less than 10°, and therefore, the angle is greater than -5° and less than 5°.
  • perpendicular means approximately perpendicular, for example, the angle formed by two straight lines is greater than 80° and less than 100°, and therefore, the angle is greater than 85° and less than 95°.
  • a and B are an integrated structure
  • a film layer patterned to form a connection is an integrated structure.
  • a and B use the same material to form a film layer and form a structure with a connection relationship at the same time through the same patterning process.
  • the embodiments of the present application provide a 2T0C storage unit with a new structure, which is more conducive to the design of high-density storage units in terms of space, and more conducive to industrialized storage units and 3D memory in terms of process.
  • FIG1A is a schematic diagram of a three-dimensional structure of a memory cell provided by an exemplary embodiment, which includes both a word line and a bit line.
  • FIG1B is a cross-sectional view of the memory cell shown in FIG1A in the AA direction.
  • this embodiment provides a memory cell, which may include: a first transistor and a second transistor arranged on a substrate 1, the first transistor may include a first gate 11, a first semiconductor layer 6, a first electrode 33 and a second electrode 34 arranged on the substrate 1, the second transistor may include a third electrode 51, a fourth electrode 52 and a second gate 12 extending along a first direction Z (a direction perpendicular to the substrate 1) arranged on the substrate 1, and a second semiconductor layer 9 surrounding the side wall of the second gate 12, the first gate 11 is connected to the second semiconductor layer 9; the second semiconductor layer 9 includes a second source contact region 91 and a second drain contact region 92 arranged at intervals, the third electrode 51 is in contact with the second source contact region 91, the fourth electrode 52 is in contact with the second drain contact region 92, and the channel between the second source contact region 91 and the second drain contact region 92 is a horizontal channel.
  • the gate of the second transistor is a vertical structure and the channel is a horizontal channel and is not stacked with the first transistor, which can reduce the size of the memory cell in the direction perpendicular to the substrate, and can facilitate the manufacture of a 3D stack of compact 2T0C memory cells, simplify the process, and reduce costs.
  • the non-stacked can be understood as spaced distribution on the substrate, for example, spaced distribution in a direction parallel to the substrate.
  • the second semiconductor layer 9 of the second transistor surrounds the second gate 12, and the source contact region 91 and the drain contact region 92 on the second semiconductor layer 9 are arranged so that the channel direction between the third electrode 51 and the fourth electrode 52 of the second transistor generally extends in a direction parallel to the substrate 1.
  • the third electrode 51 and the fourth electrode 52 overlap in their orthographic projections parallel to the first direction.
  • the structure of the memory is designed as a new structure, which makes the structure between the first transistor and the second transistor more compact.
  • the gate of each stacked second transistor can be connected as a word line, and the word line extending in the vertical direction makes the structure process of 2T0C simple and space-saving.
  • the horizontal channel described in the embodiment of the present application can be understood as a type of non-vertical channel.
  • the horizontal channel can be an embodiment in which the length direction of the channel or the carrier transmission direction is in a plane parallel to the substrate.
  • the horizontal channel can be a planar channel rather than a vertical channel.
  • a planar channel means that the extension direction of the carriers in the channel is generally parallel to the substrate rather than perpendicular to the substrate.
  • the channel extending in the plane may be a linear channel or a ring-shaped or arc-shaped channel, which is specifically determined by the shape of the semiconductor layer between the source electrode and the drain electrode.
  • the channels of the second transistor and the first transistor may be the horizontal channels described above.
  • the second transistor of the present application has a gate extending in the vertical direction and a horizontal channel, which can facilitate the formation of a through hole extending in the vertical direction at one time when a stacked 3D structure is made in the vertical direction, and a channel film layer of each layer of storage unit and a gate insulation layer of each layer of storage unit are formed at one time on the side wall of the through hole in sequence, and then the gate or word line is filled in the through hole, and different areas of the word line are used as gates of transistors of different layers.
  • the first transistor has a first gate 11 extending in a horizontal direction and a channel in a horizontal direction, so as to separate adjacent first transistors of the stacked multiple transistors in a vertical direction, thereby realizing a compact storage unit composed of the first transistor and the second transistor, so as to effectively realize device miniaturization.
  • the channel may be approximately parallel to the substrate 1, which depends on the relative position of the effective source electrode and the drain electrode in practical applications.
  • the outer contour of at least one of the upper surface and the lower surface of the electrode in the longitudinal cross-sectional view of the source electrode and the drain electrode is on a plane, and the plane is approximately parallel to the main surface of the substrate.
  • the second semiconductor layer 9 extends on the side wall of the second gate 12 to form a ring-shaped semiconductor layer extending in a direction perpendicular to the substrate 1.
  • the second semiconductor layer 9 surrounds each area of the side wall of the gate.
  • the second semiconductor layer 9 is ring-shaped, and in the cross section at each position of the second gate 12, the second semiconductor layer 9 is ring-shaped, and the size of the ring is adapted to the outer contour shape of the cross section of the second gate 12.
  • the second semiconductor layer 9 may be partially surrounded.
  • the semiconductor layer 9 may have a gap.
  • the first direction Z may intersect with the substrate 1.
  • intersecting with the substrate 1 means intersecting with the upper surface of the substrate 1 (i.e., the surface on which the first transistor and the second transistor are arranged), being parallel to the substrate 1 means being parallel to the upper surface of the substrate 1, and being perpendicular to the substrate 1 means being perpendicular to the upper surface of the substrate 1.
  • multiple memory cells may be stacked vertically.
  • the embodiments of the present disclosure are not limited thereto, and the first direction Z may be parallel to the substrate 1.
  • the first direction Z intersecting the substrate 1 is used as an example for explanation, but the following description can be applied to the scheme in which the first direction Z is parallel to the substrate 1, by replacing perpendicular to the substrate 1 with parallel to the first direction Z, and parallel to the substrate 1 with perpendicular to the first direction Z.
  • the second transistor may further include a second gate insulating layer 10 disposed between the second gate 12 and the second semiconductor layer 9 and surrounding the sidewall of the second gate 12, and the second semiconductor layer 9 is isolated from the second gate 12 by the second gate insulating layer 10.
  • the third electrode 51 and the fourth electrode 52 are insulated from the second gate 12 by the second gate insulating layer 10.
  • an orthographic projection of the first gate 11 may overlap with an orthographic projection of the third electrode 51 .
  • the orthographic projection of the first gate 11 may overlap with the orthographic projection of the third electrode 51, the orthographic projection of the third electrode 51 may overlap with the orthographic projection of the fourth electrode 52, and the first gate 11 of the first transistor is connected to the third electrode 51 of the second transistor.
  • the first gate 11 and the third electrode 51 may be an integral structure, that is, the first gate 11 and the third electrode 51 are formed simultaneously using the same material and through the same manufacturing process.
  • the embodiments of the present disclosure are not limited thereto, and the first gate 11 and the third electrode 51 may not be an integral structure, and the first gate 11 and the third electrode 51 may be independent electrodes.
  • the first gate 11 and the third electrode 51 are the same electrode extending in the same direction, and the electrode serves as the first gate 11 and the third electrode 51.
  • the first gate 11 extends in a direction parallel to the substrate 1 and the end thereof extends to the source contact region of the second semiconductor layer and is connected to the source contact region.
  • an orthographic projection of the first electrode 33 and an orthographic projection of the first gate 11 may overlap.
  • the second drain contact region 92 of the second semiconductor layer 9 and the second source contact region 91 of the second semiconductor layer 9 are located on a sidewall of the second semiconductor layer 9 , facing each other and spaced apart.
  • the first transistor may further include a first gate insulating layer 7 surrounding the first gate 11, and a first semiconductor layer 6 surrounding the first gate insulating layer 7.
  • the first electrode 33 is connected to the first semiconductor layer 6.
  • the first semiconductor layer 6 forms a receiving cavity
  • the first gate 11 is disposed in the receiving cavity
  • the first gate insulating layer 7 isolates the first semiconductor layer 6 and the first gate 11.
  • the accommodation cavity formed by the first semiconductor layer 6 may be a cavity having only one opening, or may be a cavity having two openings, and the cross section of the cavity is annular.
  • the second electrode 34 surrounds and connects the first semiconductor layer 6 , and in a plane perpendicular to the substrate 1 , a cross section of the second electrode 34 has a ring-shaped opening, and the first semiconductor layer 6 is located in the opening of the second electrode 34 .
  • the first electrode 33 may be disposed on a side of the second electrode 34 away from the second gate 12 ; and may be disposed on a side of the first gate 11 away from the second gate 12 .
  • the first semiconductor layer 6 may include a sidewall and two ends, and the first semiconductor layer 6 includes a first source contact region 61 and a first drain contact region 62, the first source contact region 61 is located on the sidewall of the first semiconductor layer 6 and surrounds the first semiconductor layer 6, the first drain contact region 62 is located on the sidewall of the first semiconductor layer 6 and surrounds the first semiconductor layer 6, or is located at the end of the two ends away from the second gate 12.
  • the first electrode 33, the second electrode 34, and the third electrode 51 may be located on a first side of the second gate 12
  • the fourth electrode 52 may be located on a second side of the second gate 12 and the first side and the second side are opposite sides.
  • the first electrode 33 may extend along the third direction Y.
  • the length of the second electrode 34 along the third direction Y may be less than the length of the first electrode 33 along the third direction Y.
  • the solution provided in this embodiment can disconnect the second electrodes 34 of different memory cells when forming a memory cell array.
  • the embodiments of the present disclosure are not limited thereto, and the length of the second electrode 34 along the third direction Y may be equal to or greater than the length of the first electrode 33 along the third direction Y.
  • the second electrode 34 may extend along the first direction Z.
  • an orthographic projection of the first electrode 33 and an orthographic projection of the first gate 11 may overlap.
  • the orthographic projection of the first electrode 33 and the orthographic projection of the second electrode 34 may not overlap, and the orthographic projection of the third electrode 51 and the orthographic projection of the fourth electrode 52 may not overlap.
  • a first distance between the surface of the third electrode 51 close to the substrate 1 and the substrate 1 and a second distance between the surface of the fourth electrode 52 close to the substrate 1 and the substrate 1 may be the same.
  • the embodiments of the present disclosure are not limited thereto, and the first distance and the second distance may be different.
  • the first thickness of the third electrode 51 and the second thickness of the fourth electrode 52 may be the same.
  • the embodiments of the present disclosure are not limited thereto, and the first thickness and the second thickness may be different.
  • the distance between the surface of the third electrode 51 close to the substrate 1 and the substrate 1 may be equal to the distance between the surface of the fourth electrode 52 close to the substrate 1 and the substrate 1, and the distance between the surface of the third electrode 51 away from the substrate 1 and the substrate 1 may be equal to the distance between the surface of the fourth electrode 52 away from the substrate 1 and the substrate 1.
  • the film layers of the third electrode 51 and the fourth electrode 52 may be different regions of the same conductive film layer and are arranged at intervals.
  • the same conductive film layer is approximately parallel to the substrate 1 .
  • the orthographic projection of the second gate 12 may be located outside the orthographic projection of the third electrode 51 , and the orthographic projection of the second gate 12 may be located outside the orthographic projection of the fourth electrode 52 .
  • the first direction Z may be perpendicular to the substrate 1 .
  • the third electrode 51 is located on a first side of the second gate 12
  • the fourth electrode 52 is located on a second side of the second gate 12
  • the first side and the second side are opposite sides.
  • the embodiments of the present disclosure are not limited thereto, and the third electrode 51 and the fourth electrode 52 may be located at other positions.
  • the third electrode 51 may extend along a second direction X
  • the fourth electrode 52 may extend along a third direction Y
  • the second direction X may be parallel to the substrate 1
  • the third direction Y may be parallel to the substrate 1
  • the second direction X and the third direction Y may intersect.
  • the embodiments of the present disclosure are not limited thereto, and the third electrode 51 and the fourth electrode 52 may be of other shapes.
  • the second direction X and the third direction Y may be perpendicular to each other, but the embodiments of the present disclosure are not limited thereto, and the second direction X and the third direction Y may be at other angles.
  • the cross-section of the first electrode 33 may be square, but the disclosed embodiments are not limited thereto, and the cross-section of the first electrode 33 may be other shapes, such as circular, hexagonal, and the like.
  • the cross-section of the third electrode 51 and the fourth electrode 52 may be square, but the embodiments of the present disclosure are not limited thereto, and the cross-section of the third electrode 51 and the fourth electrode 52 may be other shapes, such as circular, hexagonal, etc.
  • the third electrode 51 and the fourth electrode 52 can be connected at other positions different from the positions shown in Figure 1A.
  • the third electrode 51 is connected to the first side of the annular column formed by the second semiconductor layer 9, and the fourth electrode 52 is connected to the second side of the annular column formed by the second semiconductor layer 9, and the first side and the second side are adjacent, and so on.
  • the third electrode 51 and the fourth electrode 52 may be formed simultaneously through a single manufacturing process, but the embodiments of the present disclosure are not limited thereto and may be separately manufactured through different processes.
  • the distance between the surface of the first electrode 33 close to the substrate 1 and the substrate 1 may be smaller than the distance between the surface of the third electrode 51 close to the substrate 1 and the substrate 1, and the distance between the surface of the first electrode 33 away from the substrate 1 and the substrate 1 may be greater than the distance between the surface of the third electrode 51 away from the substrate 1 and the substrate 1.
  • the thickness of the first electrode 33 may be greater than the thickness of the third electrode 51.
  • the distance between the surface of the second electrode 34 away from the substrate 1 and the substrate 1 may be consistent with the distance between the surface of the second gate 12 away from the substrate 1 and the substrate 1.
  • the first semiconductor layer 6 and the second semiconductor layer 9 may be physically connected or not.
  • the end of the first semiconductor layer 6 is in contact with the side wall of the second semiconductor layer 9.
  • the end of the first semiconductor layer 6 is not in contact with the side wall of the second semiconductor layer 9, and the insulating layer between the two can be used to isolate them when the film layer is manufactured.
  • the first transistor is a read transistor
  • the second transistor is a write transistor.
  • the read transistor is turned on and the write transistor needs to be turned off.
  • the contact between the end of the first semiconductor layer 6 and the side wall of the second semiconductor layer 9 does not have a significant impact on the operation of the first transistor.
  • the two may be isolated in terms of spatial structure.
  • the length of the second semiconductor layer 9 may be equal to the length of the second gate 12.
  • the embodiments of the present disclosure are not limited thereto.
  • the length of the second semiconductor layer 9 may be less than or equal to the length of the second gate 12, less than or equal to the length of the second gate insulating layer 10, and the length of the second semiconductor layer 9 is greater than or equal to the length of the third electrode 51, and the length of the second semiconductor layer 9 is greater than or equal to the length of the fourth electrode 52.
  • the solution provided in this embodiment can shorten the channel length and reduce leakage.
  • the length of the second semiconductor layer 9 may be equal to the length of the second gate insulating layer 10
  • the length of the second gate insulating layer 10 may be equal to the length of the second gate 12 .
  • a length of the second gate insulating layer 10 may be smaller than a length of the second gate electrode 12 , and may be greater than or equal to a length of the second semiconductor layer 9 .
  • the first semiconductor layer 6 and the second semiconductor layer 9 may be metal oxide semiconductor layers, or semiconductor layers containing silicon.
  • the metal in the metal oxide semiconductor layer may include, but is not limited to, at least one of indium, tin, zinc, aluminum, and gallium.
  • the metal oxide semiconductor layer may include, but is not limited to, at least one of indium oxide, tin oxide, indium zinc oxide, tin zinc oxide, aluminum zinc oxide, indium gallium oxide, indium gallium zinc oxide, indium aluminum zinc oxide, indium tin zinc oxide, tin gallium zinc oxide, aluminum gallium zinc oxide, and tin aluminum zinc oxide.
  • the size of the channel between the third electrode 51 and the fourth electrode 52 can be controlled by the overlapping length between the orthographic projection of the third electrode 51 and the orthographic projection of the fourth electrode 52 on the plane perpendicular to the substrate 1.
  • the overlapping length between the orthographic projection of the third electrode 51 and the orthographic projection of the fourth electrode 52 is d, and the channel size can be controlled by controlling the thickness of the third electrode 51 and the fourth electrode 52 along the direction perpendicular to the substrate 1.
  • the channel size is controlled by changing the size of the through hole where the gate is located (the mask needs to be changed) or increasing the distance between the source and the drain (which will cause the transistor volume to increase).
  • This embodiment can more conveniently control the size of the channel, with small process changes and less impact on the size of the transistor.
  • an embodiment of the present disclosure provides a memory cell, including: a read transistor and a write transistor disposed on a substrate, wherein:
  • the read transistor may be a first transistor, and the read transistor includes a first gate 11, a first semiconductor layer 6, a first source electrode (which may be a second electrode 34), and a first drain electrode (which may be a first electrode 33); the first semiconductor layer 6 surrounds the first gate 11;
  • the write transistor may be a second transistor, the write transistor comprising a second gate 12, a second semiconductor layer 9, a second source electrode (which may be a third electrode 51), and a second drain electrode (which may be a fourth electrode 52); the second semiconductor layer 9 surrounds the second gate 12; the second source electrode of the write transistor is connected to the first gate 11 of the read transistor;
  • the channel of the second semiconductor layer 9 of the write transistor is a horizontal channel.
  • the second gate 12 extends in a direction perpendicular to the substrate 1 and has a sidewall, the second semiconductor layer 9 surrounds the sidewall, and the second semiconductor layer 9 includes a second source contact region 91;
  • the first gate 11 extends in a direction parallel to the substrate 1 and has a sidewall and two ends.
  • the first semiconductor layer 6 at least surrounds the sidewall. One of the two ends extends to the second source contact region 91 of the second semiconductor layer 9 and contacts the second semiconductor layer 9.
  • the sidewall of the second semiconductor layer 9 further includes a second drain contact region 92; the second source contact region 91 and the second drain contact region 92 are located in different regions of the sidewall of the second semiconductor layer 9, and the orthographic projections of the second source contact region 91 and the second drain contact region 92 in a plane perpendicular to the substrate 1 have an overlapping region, so that the channel between the second source contact region 91 and the second drain contact region 92 is parallel to the substrate 1;
  • the sidewall of the first semiconductor layer 6 may have a first source contact region 61 and a first drain contact region 62 , and a channel between the first source contact region 61 and the first drain contact region 62 is parallel to the substrate.
  • Fig. 2 is a schematic diagram of an equivalent circuit of a memory cell according to an embodiment of the present disclosure.
  • the first transistor can be used as a read transistor
  • the second transistor can be used as a write transistor
  • the first electrode 33 can be connected to a read bit line
  • the second electrode 34 can be connected to a read word line
  • the second gate 12 can be connected to a write word line
  • the fourth electrode 52 can be connected to a write bit line.
  • a voltage is applied to the write word line (i.e., the second gate 12), the channel is turned on, and the third electrode 51 and the fourth electrode 52 are connected.
  • the read and write process is as follows: 1) When writing "1", a read voltage is applied to the write bit line (i.e., the fourth electrode 52), and a charge is injected into the storage node (the storage node is between the first gate 11 and the third electrode 51, as indicated by the arrow in Figure 2), and the first transistor is turned on; when reading "1", a read voltage is applied to the read word line (i.e., the second electrode 34) in the read tube.
  • the peripheral circuit Since there is no charge in the storage node, no or very small current flows between the read bit line (i.e., the first electrode 33) and the read word line (i.e., the second electrode 34), and the peripheral circuit amplifies and identifies the current to complete the process of reading "0".
  • the technical solution of this embodiment is explained below by showing the preparation process of the substrate in this embodiment.
  • the "patterning process” mentioned in this embodiment includes deposition of film layer, coating of photoresist, mask exposure, development, etching, stripping of photoresist and other processes, which is a mature preparation process in the relevant technology.
  • the "photolithography process” mentioned in this embodiment includes coating of film layer, mask exposure and development, which is a mature preparation process in the relevant technology.
  • Deposition can adopt known processes such as sputtering, evaporation, chemical vapor deposition, coating can adopt known coating processes, and etching can adopt known methods, which are not limited here.
  • thin film refers to a thin film made of a certain material on a substrate using a deposition or coating process. If the "thin film” does not require a patterning process or a photolithography process during the entire production process, the “thin film” can also be called a “layer”. If the "thin film” also requires a patterning process or a photolithography process during the entire production process, it is called a “thin film” before the patterning process and a "layer” after the patterning process. The "layer” after the patterning process or the photolithography process contains at least one "pattern".
  • the preparation process of the storage unit may include:
  • a first insulating film, a first metal film, and a second insulating film are sequentially deposited on a substrate 1 to form a first insulating layer 2, a first metal layer 3, and a second insulating layer 4, as shown in FIG. 3 .
  • the substrate 1 can be made of glass, silicon, flexible materials, etc.
  • the flexible material can be made of polyimide (PI), polyethylene terephthalate (PET) or a surface-treated polymer soft film.
  • the substrate 1 can be a single-layer structure or a multi-layer stacked structure.
  • the substrate of the stacked structure can include: flexible material/inorganic material/flexible material.
  • the inorganic material can be any one or more of silicon nitride (SiNx), silicon oxide (SiOx) and silicon oxynitride (SiON).
  • the substrate 1 can be a semiconductor substrate; for example, it can include at least one single semiconductor material (for example, a silicon (Si) substrate, a germanium (Ge) substrate, etc.), at least one III-V compound semiconductor material (for example, a gallium nitride (GaN) substrate, a gallium arsenide (GaAs) substrate, an indium phosphide (InP) substrate, etc.), at least one II-VI compound semiconductor material, at least one organic semiconductor material or other semiconductor materials known in the art.
  • a single semiconductor material for example, a silicon (Si) substrate, a germanium (Ge) substrate, etc.
  • III-V compound semiconductor material for example, a gallium nitride (GaN) substrate, a gallium arsenide (GaAs) substrate, an indium phosphide (InP) substrate, etc.
  • the first insulating film and the second insulating film may be a low-K dielectric layer, i.e., a dielectric layer with a dielectric constant K ⁇ 3.9.
  • they may be any one or more of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), and silicon carbide (SiC).
  • the first insulating film and the second insulating film may be made of the same material or different materials.
  • the first metal film may include, but is not limited to, at least one of the following: tungsten (W), aluminum (Al), molybdenum (Mo), ruthenium (Ru), titanium nitride (TiN), and tantalum (Ta).
  • the first insulating layer 2, the first metal layer 3, and the second insulating layer 4 are patterned by a patterning process to form a first slot P1 and a second slot P2, as shown in FIG4.
  • the first slot P1 penetrates the first insulating layer 2, the first metal layer 3, and the second insulating layer 4, and the second slot P2 penetrates the first insulating layer 2, the first metal layer 3, and the second insulating layer 4.
  • the first metal layer 3 may include a first sub-portion 31 extending along the second direction X, a second sub-portion 32 extending along the third direction Y, and a first electrode 33 extending along the third direction Y, and the first sub-portion 31 connects the second sub-portion 32 and the first electrode 33.
  • the cross-sections of the first insulating layer 2 , the first metal layer 3 , and the second insulating layer 4 may be H-shaped.
  • first slot P1 and the second slot P2 may have the same size and shape, but the embodiments of the present disclosure are not limited thereto, and the first slot P1 and the second slot P2 may have different sizes and shapes.
  • the pattern of the first metal layer 3 is only an example and may be a pattern of other shapes.
  • the current second sub-portion 32 is divided into two parts along the extension direction of the first sub-portion 31 , and only one of the parts may be retained as the second sub-portion 32 .
  • a third insulating film is deposited to form a third insulating layer 5 , and the third insulating layer 5 fills the first groove P1 and the second groove P2 , as shown in FIG. 5 .
  • the third insulating film may be a low-K dielectric layer, i.e., a dielectric layer with a dielectric constant K ⁇ 3.9, such as any one or more of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), and silicon carbide (SiC).
  • the third insulating film and the first insulating film and the second insulating film may be made of the same material or different materials.
  • the subsequent fourth insulating film is similar and will not be described in detail.
  • a through hole 41 penetrating the first insulating layer 2, the first metal layer 3 and the second insulating layer 4 is formed, and on a plane parallel to the substrate 1, the orthographic projection of the through hole 41 may overlap with the orthographic projection of the first sub-portion 31, and the orthographic projection of the through hole 41 may overlap with the orthographic projection of the second sub-portion 32, as shown in FIG6.
  • the cross-section of the through hole 41 shown in FIG6 on a plane parallel to the substrate 1 is a quadrilateral, but the embodiments of the present disclosure are not limited thereto, and the cross-section of the through hole 41 on a plane parallel to the substrate 1 may be other shapes, such as a circle, a pentagon, a hexagon, etc.
  • the first sub-portion 31, the second sub-portion 32, and the connection between the first electrode 33 and the first sub-portion 31 in the first metal layer 3 are selectively etched away.
  • the first electrode 33 remains in the first metal layer 3, and the first electrode 33 is provided with a third groove P3 facing the first sub-portion 31 (the first sub-portion 31 has been etched away), as shown in FIGS. 7A and 7B.
  • a first channel 42 formed by the area where the selectively etched first sub-portion 31 is located, a second channel 43 formed by the area where the second sub-portion 32 is located, and the through hole 41 are formed.
  • the first channel 42 is connected to the through hole 41
  • the second channel 43 is connected to the through hole 41.
  • a first semiconductor film and a first gate oxide film are sequentially deposited to form a first semiconductor layer 6 and a first gate insulating layer 7, as shown in FIGS. 8A, 8B, and 8C, wherein FIG. 8C is a cross-sectional view of FIG. 8B along the BB direction, and only shows the first semiconductor layer 6 and the first gate insulating layer 7.
  • the first semiconductor layer 6 and the first gate insulating layer 7 serve as the channel walls of the channel, and the first semiconductor layer 6 surrounds the first gate insulating layer 7.
  • the first gate oxide film may be a High-K dielectric material.
  • the High-K dielectric material may include but is not limited to at least one of the following: silicon oxide, aluminum oxide, and hafnium oxide.
  • the first semiconductor film as a channel layer may be a film layer containing silicon, or a metal oxide semiconductor, wherein the metal oxide semiconductor includes but is not limited to at least one of the following materials: IGZO, indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO).
  • ITO Indium Tin Oxide
  • IZO indium zinc oxide
  • the subsequent second semiconductor film is similar and will not be repeated.
  • the first semiconductor film and the first gate oxide film may be deposited by an atomic layer deposition (ALD) method.
  • ALD atomic layer deposition
  • FIG. 9C is a cross-sectional view of FIG. 9B along the BB direction, and only shows the first semiconductor layer 6, the first gate insulating layer 7, and the second metal layer 8. At this time, the first gate insulating layer 7 surrounds the second metal layer 8.
  • the second metal film may include, but is not limited to, at least one of the following: tungsten (W), aluminum (Al), molybdenum (Mo), ruthenium (Ru), titanium nitride (TiN), and tantalum (Ta).
  • the second metal film may be the same as or different from the first metal film.
  • Figure 10C is a cross-sectional view of Figure 10B along the BB direction, and only shows the first semiconductor layer 6, the first gate insulating layer 7 and the second metal layer 8.
  • the second metal layer 8 located in the first channel 42 serves as the third electrode 51 of the second transistor
  • the second metal layer 8 located in the second channel 43 serves as the fourth electrode 52 of the second transistor, and the third electrode 51 and the fourth electrode 52 are disconnected from each other.
  • a second semiconductor film, a second gate oxide film and a third metal film are sequentially deposited on the sidewalls of the through hole 41 obtained by the above etching to form a second semiconductor layer 9, a second gate insulating layer 10 and a second gate 12 respectively, and the second gate insulating layer 10 surrounds the second gate 12, the second semiconductor layer 9 surrounds the second gate insulating layer 10, and the second gate 12 completely fills the area surrounded by the second gate insulating layer 10.
  • Figure 11C is a cross-sectional view of Figure 11B along the BB direction, and only shows the first semiconductor layer 6, the first gate insulating layer 7, the second semiconductor layer 9, the second gate insulating layer 10, the second metal layer 8 (third electrode 51, fourth electrode 52), and the second gate 12.
  • the second gate oxide film may be a High-K dielectric material.
  • the High-K dielectric material may include but is not limited to at least one of the following: silicon oxide, aluminum oxide, and hafnium oxide.
  • the materials of the second gate oxide film and the first gate oxide film may be the same or different.
  • the second semiconductor thin film may be made of the same material as the first semiconductor thin film.
  • the third metal film may include, but is not limited to, at least one of the following: tungsten (W), aluminum (Al), molybdenum (Mo), ruthenium (Ru), titanium nitride (TiN), and tantalum (Ta).
  • the third metal film may be the same as or different from the first metal film and the second metal film.
  • the subsequent fourth metal film is similar and will not be described in detail.
  • a slot structure 44 as shown in FIG. 12 is etched, but the first semiconductor layer 6 and the portion included in the first semiconductor layer 6 are not etched.
  • the slot structure 44 penetrates each film layer on the substrate 1, and on a plane perpendicular to the substrate 1, the orthographic projection of the slot structure 44 is located outside the orthographic projection of the first electrode 33, outside the orthographic projection of the through hole 41, and outside the orthographic projection of the fourth electrode 52.
  • a fourth metal film is deposited in the slot structure 44 to form a fourth metal layer 34' filling the slot structure 44, as shown in FIG. 13A and FIG. 13B.
  • a fourth slot P4 and a fifth slot P5 penetrating the fourth metal layer 34' are formed, as well as a second electrode 34, as shown in FIG14A. Similar to the first slot P1 and the second slot P2, the fourth slot P4 and the fifth slot P5 are respectively located on both sides of the fourth metal layer 34', the length of the second electrode 34 along the third direction Y is less than the length of the first electrode 33 along the third direction Y, and the second electrode 34 surrounds the first semiconductor layer 6, as shown in FIG14B.
  • FIG14C is a cross-sectional view of FIG14B along the BB direction, and it can be seen that the main structures of the first transistor and the second transistor are basically prepared.
  • a fourth insulating film is deposited to form a fourth insulating layer 55 , and the fourth insulating layer 55 fills the fourth groove P4 and the fifth groove P5 , as shown in FIG. 15 .
  • the first gate insulating layer 7 surrounding the fourth electrode 52 and the first semiconductor layer 6 surrounding the first gate insulating layer 7 may exist in the second channel 43.
  • the embodiment of the present disclosure is not limited thereto, and the first gate insulating layer 7 surrounding the fourth electrode 52 and the first semiconductor layer 6 surrounding the first gate insulating layer 7 may not exist in the second channel 43 (except for the area intersecting with the through hole 41), that is, the first gate insulating layer 7 and the first semiconductor layer 6 in the second channel 43 may be removed.
  • the first gate insulating layer 7 and the first semiconductor layer 6 in the second channel 43 may be retained.
  • a patterning process can be used to form an H-shaped first metal layer 3.
  • a second insulating film is deposited to form a second insulating layer 4, and there is no need to form the first groove P1 and the second groove P2 by groove formation, and there is no need to deposit a third insulating film.
  • FIG16 is a schematic cross-sectional view of a memory cell provided by another exemplary embodiment.
  • the memory cell includes a first transistor and a second transistor.
  • the first transistor may include a first electrode 33, a second electrode 34, and a first gate 11, as well as a first gate insulating layer 7 surrounding the first gate 11 and a first semiconductor layer 6 surrounding the first gate insulating layer 7;
  • the second transistor may include a third electrode 51, a fourth electrode 54, and a second gate 12, as well as a second semiconductor layer 9 extending along a first direction Z, and a second gate insulating layer 10 isolating the second semiconductor layer 9 and the second gate 12.
  • the thickness of the fourth electrode 52 may be greater than the thickness of the third electrode 51.
  • the present disclosure also provides an electronic device, including the storage unit described in any of the above embodiments.
  • the electronic device may be a storage device, a smart phone, a computer, a tablet computer, an artificial intelligence device, a wearable device, or a mobile power supply.
  • the storage device may include a memory in a computer, etc., which is not limited here.
  • FIG17A is a schematic plan view of a 3D memory provided by an embodiment of the present disclosure
  • FIG17B is a schematic cross-sectional view of a 3D memory provided by an embodiment of the present disclosure.
  • this embodiment provides a 3D memory, which may include multiple layers of memory cells stacked in a direction perpendicular to a substrate 1, wherein:
  • Each layer of the storage unit may include: a read transistor and a write transistor; the read transistor may be a first transistor, and the write transistor may be a second transistor;
  • the read transistor includes a first gate 11, a first semiconductor layer 6, a first source electrode (which may be a second electrode 34) and a first drain electrode (which may be a first electrode 33), and the first gate 11 may extend in a direction parallel to the substrate 1;
  • the write transistor includes a second gate 12, a second semiconductor layer 9, a second source electrode (which may be a third electrode 51) and a second drain electrode (which may be a fourth electrode 52), and the second gate 12 may extend in a direction perpendicular to the substrate 1;
  • the second source electrode of the write transistor is connected to the first gate electrode 11 of the read transistor; the first semiconductor layer 6 surrounds the first gate electrode 11, and the second semiconductor layer 9 surrounds the second gate electrode 12; and the channel of the second semiconductor layer 9 of the write transistor is a horizontal channel.
  • the second semiconductor layer of the write transistor surrounds the second gate, and the source contact area and the drain contact area on the second semiconductor layer are arranged so that the channel direction between the source and the drain generally extends in a direction parallel to the substrate.
  • the second transistor is not stacked with the first transistor, and the structure between the first transistor and the second transistor is more compact, which can reduce the size of the memory cell in the direction perpendicular to the substrate, and can facilitate the manufacture of a 3D stack of 2T0C memory cells with a compact structure, simplify the process, and reduce costs.
  • the read transistor and the write transistor in the same layer are distributed on the substrate 1 at intervals along a direction parallel to the substrate 1 .
  • the first gate electrode 11 of the read transistor and the second source electrode of the write transistor may be an integral structure, but are not limited thereto and may be two independent electrodes.
  • the first gate 11 may extend along a second direction parallel to the substrate 1;
  • the first semiconductor layer 6 may include a first source contact region 61 and a first drain contact region 62
  • the second semiconductor layer 9 may include a second source contact region 91 and a second drain contact region 92 ;
  • Each layer of the memory cell may further include: a first bit line 330 extending along a third direction parallel to the substrate 1, and a second bit line 520, wherein the third direction intersects the second direction; the first bit line 330 is connected to the first drain contact region 62 of the first semiconductor layer 6, and the second bit line 520 is connected to the second drain contact region 92 of the second semiconductor layer 9;
  • Each layer of the memory cell may further include: a first word line 340 and a second word line 120 extending in a direction perpendicular to the substrate 1 respectively;
  • the first word lines 340 are respectively connected to the first source contact regions 61 of the first semiconductor layers 6 of the memory cells at different layers, and the second word lines 120 are respectively connected to the second gates 12 of the memory cells at different layers.
  • the second gates 12 of the memory cells at different layers may be part of the second word lines 120.
  • the solution provided in this embodiment can use the second gate connection of each stacked write transistor as a word line.
  • the word line extending in the vertical direction makes the structure process of 2T0C simple and saves space.
  • the first word line 340 surrounds the sidewall of each first semiconductor layer 6 of the memory cells of different layers and is connected to the first source contact region 61 of the sidewall of each first semiconductor layer 6 .
  • the first gate 11 may have a sidewall, a first end, and a second end. The first end is connected to the second source contact region 91 of the second semiconductor layer 9 , and the first bit line 330 is connected to the second end.
  • the second semiconductor layer 9 of the write transistors at different layers may be an integrated structure.
  • write transistors in different layers may share a ring-shaped second semiconductor layer 9 extending in a direction perpendicular to the substrate 1 .
  • the write transistor may further include a second gate insulating layer 10 surrounding the second gate 12 , and the second semiconductor 9 surrounds the second gate insulating layer 10 .
  • write transistors in different layers may share a ring-shaped second gate insulating layer 10 extending in a direction perpendicular to the substrate 1 .
  • the projections of the first gates 11 of different layers on the substrate 1 may be located in the same area, the projections of the first source electrodes of different layers on the substrate 1 may be located in the same area, the projections of the first drain electrodes of different layers on the substrate 1 may be located in the same area, the projections of the second gates 12 of different layers on the substrate 1 may be located in the same area, the projections of the second source electrodes of different layers on the substrate 1 may be located in the same area, and the projections of the second drain electrodes of different layers on the substrate 1 may be located in the same area.
  • the structures of the read transistor and the write transistor in the above 3D memory may refer to the structures of the first transistor and the second transistor in the above-mentioned embodiments, which will not be described in detail here.
  • an embodiment of the present disclosure provides a method for preparing a 3D memory, wherein the 3D memory includes multiple layers of memory cells, a first word line, and a second word line stacked in a direction perpendicular to a substrate, wherein each layer of the memory cells includes: a read transistor and a write transistor, wherein the read transistor includes a first gate, a first semiconductor layer, a first source electrode, and a first drain electrode; and the write transistor includes a second gate, a second semiconductor layer, a second source electrode, and a second drain electrode.
  • the preparation method may include:
  • Step 1801 providing a substrate, alternately depositing an insulating film and a metal film on the substrate, and patterning to form a stacked structure including alternately arranged insulating layers and metal layers, wherein the metal layer includes a first sub-portion and a second sub-portion connected to each other, and a first drain electrode of the read transistor;
  • Step 1802 etching the stack structure to form a through hole penetrating the stack structure, etching the first sub-portion to form a first channel, etching the second sub-portion to form a second channel, the first channel and the second channel being connected to the through hole;
  • Step 1803 depositing a semiconductor film, a gate insulating film, and a metal film completely filling the channel on the sidewalls of the channel formed by the first channel, the second channel, and the through hole in sequence, and etching the gate insulating film and the metal film in the through hole to form a first semiconductor layer, a second source electrode, a first gate electrode, and a second drain electrode located in the first channel;
  • Step 1804 depositing a semiconductor film on the sidewall of the through hole to form a second semiconductor layer of the write transistor, the second semiconductor layer comprising a second source contact region and a second drain contact region that are spaced apart, the second source electrode contacts the second source contact region, and the second drain electrode contacts the second drain contact region; the channel between the second source contact region and the second drain contact region is a horizontal channel;
  • Step 1805 depositing a metal film in the through hole to completely fill the through hole to form the second word line, and the second gate of the write transistor at a different layer is a part of the second word line;
  • Step 1806 patterning to form the first word line extending in a direction perpendicular to the substrate, wherein the first source electrodes of the read transistors at different layers are part of the first word line.
  • the 3D memory prepared by the preparation method of the 3D memory provided by the embodiment of the present disclosure has a gate of the second transistor of a vertical structure and a channel of a horizontal channel that is not stacked with the first transistor, which can reduce the size of the memory cell in the vertical substrate direction, and can facilitate the manufacture of a 3D stack of compact 2T0C memory cells, simplify the process, and reduce costs.
  • the 3D memory provided by the present embodiment can change the channel size by adjusting the thickness of the source or drain, and the process is simple and has little effect on the size of the transistor.
  • the preparation method of the embodiment of the present disclosure can be implemented using existing mature preparation equipment, with little improvement on the existing process, and can be well compatible with the existing preparation process, and the process is simple to implement, easy to implement, high production efficiency, low production cost, and high yield rate.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
PCT/CN2022/137319 2022-10-18 2022-12-07 存储单元、3d存储器及其制备方法、电子设备 Ceased WO2024082394A1 (zh)

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EP22955194.0A EP4380330A4 (en) 2022-10-18 2022-12-07 MEMORY CELL, 3D MEMORY AND PREPARATION METHOD THEREOF, AND ELECTRONIC DEVICE
JP2023552547A JP2025536163A (ja) 2022-10-18 2022-12-07 記憶ユニット、３ｄメモリ及びその製造方法、電子装置
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